Discrete Semiconductor Products | Single FETs, MOSFETs
Mfr Part # | Quantity Available | Price | Series | Package | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
380 In Stock | 1 : $20.50000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 39A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 95 nC @ 20 V | +22V, -6V | 1825 pF @ 800 V | - | 179W (Tc) | -55°C ~ 150°C | Through Hole | TO-247AD | TO-247-3 | ||
2,289 In Stock | 1 : $12.25000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 20V | 200mOhm @ 10A, 20V | 4V @ 5mA | 57 nC @ 20 V | +22V, -6V | 870 pF @ 800 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 | ||
854 In Stock | 1 : $15.85000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 27A (Tc) | 20V | 150mOhm @ 14A, 20V | 4V @ 7mA | 80 nC @ 20 V | +22V, -6V | 1125 pF @ 800 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 | ||
0 In Stock Check Lead Time | 450 : $19.28813 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 70A (Tc) | 20V | 50mOhm @ 40A, 20V | 4V @ 20mA | 175 nC @ 20 V | +22V, -6V | 317 pF @ 800 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | ||
0 In Stock Check Lead Time | 450 : $29.99876 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 20V | 32mOhm @ 50A, 20V | 4V @ 30mA | 265 nC @ 20 V | +22V, -6V | 495 pF @ 800 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | ||
0 In Stock | Active | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 27A (Tc) | 20V | 150mOhm @ 14A, 20V | 4V @ 7mA | 63 nC @ 20 V | +22V, -6V | 1130 pF @ 800 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | ||
0 In Stock | Active | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 39A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 92 nC @ 20 V | +22V, -6V | 170 pF @ 800 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | ||
0 In Stock | Active | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 20V | 200mOhm @ 10A, 20V | 4V @ 5mA | 50 nC @ 20 V | +22V, -6V | 890 pF @ 800 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |