BSC12DN20 Infineon Technologies

Discrete Semiconductor Products | Single

Compare	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

	BSC12DN20NS3GATMA1 MOSFET N-CH 200V 11.3A 8TDSON Infineon Technologies	3,740 In Stock	1 : $1.94000 Cut Tape (CT) 5,000 : $0.52012 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	11.3A (Tc)	10V	125mOhm @ 5.7A, 10V	4V @ 25µA	8.7 nC @ 10 V	±20V	680 pF @ 100 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN