G2R1000 GeneSiC Semiconductor

Discrete Semiconductor Products | Single

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

G2R1000MT17D SIC MOSFET N-CH 4A TO247-3 GeneSiC Semiconductor	7,841 In Stock	1 : $5.44000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5A (Tc)	20V	1.2Ohm @ 2A, 20V	5.5V @ 500µA	11 nC @ 20 V	+25V, -10V	111 pF @ 1000 V	-	44W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G2R1000MT17J SIC MOSFET N-CH 3A TO263-7 GeneSiC Semiconductor	11,817 In Stock	1 : $6.44000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	3A (Tc)	20V	1.2Ohm @ 2A, 20V	4V @ 2mA	-	+20V, -10V	139 pF @ 1000 V	-	54W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G2R1000MT33J SIC MOSFET N-CH 4A TO263-7 GeneSiC Semiconductor	2,954 In Stock	1 : $18.69000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	4A (Tc)	20V	1.2Ohm @ 2A, 20V	3.5V @ 2mA	21 nC @ 20 V	+20V, -5V	238 pF @ 1000 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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