Quick Dive Information on the Latest Product Additions and New Components.
EPC's EPC2106 half bridge has high efficiency power conversion in a small footprint.
EPC's EPCDESIGNTOOL GaN FET design tools are used in daisy-chain and electromigration testing and are available in a variety of die sizes.
EPC's GaN Semiconductors are designed specifically for resonant wireless power transfer applications, enabling rapid design of highly efficient end-use systems.
Silicon Labs' partnership with EPC enables designers to take advantage of reference designs that simplify the evaluation process of eGAN FETs.
EPC’s EPC2051 100 V eGaN® power transistor is 30 times smaller than comparable silicon and is capable of 97% efficiency at 500 kHz.
EPC’s 33 W wireless power kit, EPC9129, comes complete with a Class 4 transmitter paired with a regulated Category 5 AirFuel™ Alliance compatible device.
EPC’s successful AEC-Q101 qualification means automotive electronics can now take full advantage of eGaN devices.
EPC's EPC2050 is just 1.95 mm x 1.95 mm (3.72 mm2), giving designers high performance in a small size package.
EPC's EPC2112/EPC2115 eGaN® ICs combine gate drivers with high-frequency GaN FETs for improved efficiency, reduced size, and lower cost.
EPC's EPC9205 GaN power module is designed for plug-and-play evaluation of the high performance gained with gallium nitride power integrated circuits.
EPC's EPC9204 development board provides an eGaN IC based power module, featuring the EPC2111 eGaN® IC (enhancement-mode gallium nitride integrated circuit).
EPC's demonstration board EPC9131 is easy to set up to evaluate the performance of the EPC2112 eGaN® IC and directly driven from the controller IC.
EPC’s EPC9130 demonstration board features a power density exceeding 1000 W per cubic inch, and over 96% efficiency.
EPC’s wireless power solutions offer a range of solutions for use in applications for everyday life.
EPC’s latest generation eGaN technology cuts the size of their devices in half, but triples their performance.
EPC's GaN today is facing a period of extremely rapid growth because semiconductors using this material give companies a major performance and cost advantage.
EPC's EPC9126 development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak).
EPC eGaN® FETs and ICs enable multi-mode capability in a single amplifier, resulting in highly efficient wireless power systems such as the EPC9121 WiPo Demo Board.
EPC's EPC9065 is a high efficiency, Zero Voltage Switching (ZVS) differential mode Class-D amplifier development board that operates at, but is not limited to, 6.78 MHz (lowest ISM band).
EPC's GaN-based differential mode development boards that can operate up to 30 MHz.
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