Toshiba has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding new 40 V and 60 V devices to the company’s existing lineup. All the devices will be available in a DPAK package option that realizes the low ON-resistance, low QOSS, for increased efficiency in switching-mode power supplies used in base stations, servers, or industrial equipment.
Comprising 40 V and 60 V devices, the new N-channel MOSFETs are based on Toshiba’s new-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver ‘best-in-class’ efficiency across a wide range of load conditions by driving down on resistance (RDS(ON)) and improving switching efficiency by reducing output charge (QOSS).
The MOSFETs will help designers to reduce losses and board space in a variety of power management circuits including high-side and low-side switching in DC-DC conversion and secondary side synchronous rectification in AC-DC designs. The technologies are also ideal for motor control and for protection circuit modules in electronic equipment based on Lithium-ion (Li-ion) batteries.
- Low drain-source on-resistance
- Low output charge (drain-source capacitance charge)
- DPAK package (6.54 mm x 10.14 mm x 2.3 mm)
- Power supply for servers and base stations
- Efficient DC-DC converters
- Switching regulators