DTMOSIV Superjunction MOSFETs

Ultra-low RDS(ON), 600 V Superjunction MOSFETs from Toshiba

Image of Toshiba Semiconductor and Storage's DTMOSIV Superjunction MOSFETsWith ultra-low RDS(ON), Toshiba's 600 V DTMOSIV Superjunction (SJ) MOSFETs are ideal switching devices for switching power supplies, micro inverters, adaptors, photovoltaic inverters and other power applications that demand a combination of high-speed, high-efficiency and low EMI noise.

Superjunction MOSFETs offer ultra-low on resistance without power loss penalties. As a result, Toshiba's new DTMOSIV process, which is being deployed in the company's latest family of high-speed, high-efficiency 600 V power MOSFETs, offers on-resistance ratings that are up to 30 percent lower than third-generation DTMOS products for the same die size.

The benefit is that designers can now choose a 600 V MOSFET in a TO-220SIS package with an RDS(ON) of just 0.065 Ω, or a similar device in a TO-247 package with an RDS(ON) down to 0.04 Ω.

In addition to driving down on resistance, the DTMOSIV process has allowed Toshiba to minimize MOSFET output capacitance (Coss) for optimized switching power supply operation at light load. An optimized gate-drain capacitance (Cgd) delivers improved DV/DT switching control, while an optimized RDS(ON)*Qg figure of merit supports high-efficiency switching. By supporting lower DV/DT ratings, DTMOSIV also reduces EMI noise in high-speed switching circuitry.

Features Applications
  • Optimized switching characteristics:
    • Easy to control
    • Low EMI
  • Wide RDS(ON) range variation
    • 18 mΩ to 900 mΩ (Max)
  • Improved RDS(ON) x area
    • Package line-up includes:
    • DPAK, IPAK, D²PAK, I²PAK, TO-220, TO-220SIS, TO-247, TO-3P(N), TO-3P(L)
  • Switching power supplies
  • Photovoltaic inverters
  • Micro inverters
  • Adaptors


ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
TK10P60W,RVQ datasheet linkMOSFET N CH 600V 9.7A DPAKTK10P60W,RVQMOSFET N CH 600V 9.7A DPAK3954 - Immediate
TK10P60W,RVQ product page link
TK39J60W5,S1VQ datasheet linkMOSFET N CH 600V 38.8A TO-3P(N)TK39J60W5,S1VQMOSFET N CH 600V 38.8A TO-3P(N)218 - Immediate
TK39J60W5,S1VQ product page link
TK16A60W,S4VX datasheet linkMOSFET N CH 600V 15.8A TO-220SISTK16A60W,S4VXMOSFET N CH 600V 15.8A TO-220SIS147 - Immediate
TK16A60W,S4VX product page link
TK31J60W,S1VQ datasheet linkMOSFET N CH 600V 30.8A TO-3P(N)TK31J60W,S1VQMOSFET N CH 600V 30.8A TO-3P(N)27 - Immediate
TK31J60W,S1VQ product page link
TK39J60W,S1VQ datasheet linkMOSFET N-CH 600V 38.8A TO-3PTK39J60W,S1VQMOSFET N-CH 600V 38.8A TO-3P22 - Immediate
TK39J60W,S1VQ product page link
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Published: 2013-03-11