30 V and 40 V Ultra-High Efficiency MOSFETs

Toshiba expands its ultra-high efficiency MOSFET family by adding 30 V and 40 V devices with TSON Advance and SOP Advance package options

Image of Toshiba's 30 V and 40 V Ultra-High Efficiency MOSFETsToshiba has expanded its family of ultra-high efficiency, low-voltage MOSFETs by adding 30 V and 40 V devices to the company’s existing lineup. All of the devices are available in ultra-compact TSON Advance and SOP Advance package options that realize the low ON resistance and low QOSS for increased efficiency in switching mode power supplies used in base stations, servers, or industrial equipment.

Comprising one 30 V device and one 40 V device, the N-channel MOSFETs are based on Toshiba’s next-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver "best-in-class" efficiency across a wide range of load conditions by driving down ON resistance (RDS(ON)) and improving switching efficiency by reducing output charge (QOSS).

The MOSFETs will help designers to reduce losses and board space in a variety of power-management circuits including high-side and low-side switching in DC-DC conversion and secondary-side synchronous rectification in AC-DC designs. The technologies are also ideal for motor control and for protection circuit modules in electronic equipment based on Lithium ion (Li-ion) batteries.

At a voltage (VGS) of 10 V, the maximum RDS(ON) rating for the 30 V MOSFET is just 0.65 mΩ, while typical COSS is 2720 pF. The 40 V item offers RDS(ON) and typical COSS ratings: 0.85 mΩ and 1930 pF. This ensures enhanced flexibility for optimizing performance in a given application.

The UMOS IX-H MOSFETs are available in low-profile, surface-mount packages TSON Advance (3 mm x 3 mm) and SOP Advance (5 mm x 6 mm). All of the MOSFETs will operate with channel temperatures up to 175°C.

Features Applications
  • Low drain-source ON resistance:
  • Low output charge (drain-source capacitance charge):
  • TSON Advance package (3.3 mm x 3.3 mm x 0.85 mm)
  • SOP Advance package (5 mm x 6 mm x 0.95 mm)
  • Power supply for servers and base stations
  • Efficient DC-DC converters
  • Switching regulators

30 V and 40 V Ultra-High-Efficiency MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
TPH3R704PL,L1Q datasheet linkMOSFET N-CH 40V 92A TSONTPH3R704PL,L1QMOSFET N-CH 40V 92A TSON15875 - Immediate
TPH3R704PL,L1Q product page link
TPN2R304PL,L1Q datasheet linkMOSFET N-CH 40V 80A TSONTPN2R304PL,L1QMOSFET N-CH 40V 80A TSON4164 - Immediate
TPN2R304PL,L1Q product page link
TPHR8504PL,L1Q datasheet linkMOSFET N-CH 40V 150A 8SOPTPHR8504PL,L1QMOSFET N-CH 40V 150A 8SOP4811 - Immediate
TPHR8504PL,L1Q product page link
TPHR6503PL,L1Q datasheet linkMOSFET N-CH 30V 150A 8SOPTPHR6503PL,L1QMOSFET N-CH 30V 150A 8SOP293 - Immediate
TPHR6503PL,L1Q product page link
TPN3R704PL,L1Q datasheet linkMOSFET N-CH 40V 80A TSONTPN3R704PL,L1QMOSFET N-CH 40V 80A TSON0TPN3R704PL,L1Q product page link
English  |  Español
Published: 2016-07-01