Toshiba has expanded its family of ultra-high efficiency, low-voltage MOSFETs by adding 30 V and 40 V devices to the company’s existing lineup. All of the devices are available in ultra-compact TSON Advance and SOP Advance package options that realize the low ON resistance and low QOSS for increased efficiency in switching mode power supplies used in base stations, servers, or industrial equipment.
Comprising one 30 V device and one 40 V device, the N-channel MOSFETs are based on Toshiba’s next-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver "best-in-class" efficiency across a wide range of load conditions by driving down ON resistance (RDS(ON)) and improving switching efficiency by reducing output charge (QOSS).
The MOSFETs will help designers to reduce losses and board space in a variety of power-management circuits including high-side and low-side switching in DC-DC conversion and secondary-side synchronous rectification in AC-DC designs. The technologies are also ideal for motor control and for protection circuit modules in electronic equipment based on Lithium ion (Li-ion) batteries.
At a voltage (VGS) of 10 V, the maximum RDS(ON) rating for the 30 V MOSFET is just 0.65 mΩ, while typical COSS is 2720 pF. The 40 V item offers RDS(ON) and typical COSS ratings: 0.85 mΩ and 1930 pF. This ensures enhanced flexibility for optimizing performance in a given application.
The UMOS IX-H MOSFETs are available in low-profile, surface-mount packages TSON Advance (3 mm x 3 mm) and SOP Advance (5 mm x 6 mm). All of the MOSFETs will operate with channel temperatures up to 175°C.
- Low drain-source ON resistance:
- Low output charge (drain-source capacitance charge):
- TSON Advance package (3.3 mm x 3.3 mm x 0.85 mm)
- SOP Advance package (5 mm x 6 mm x 0.95 mm)
- Power supply for servers and base stations
- Efficient DC-DC converters
- Switching regulators
30 V and 40 V Ultra-High-Efficiency MOSFETs