Silicon Carbide Diodes

ROHM silicon carbide Schottky diodes push the performance envelope

Silicon Carbide DiodesROHM Semiconductor's SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) are now available. This new class of SiC diodes offers industry-leading low forward voltage and fast recovery time, leading to improved power conversion efficiency in applications such as PFC/power supplies, solar panel inverters, uninterruptible power supplies, air conditioners and others.

The SCS1xxAGC series maintains low forward voltage over a wide operating temperature range which results in lower power dissipation under actual operating conditions. For example, the 10 A rated part has a VF of 1.5 V at 25°C and 1.6 V at 150°C. Low VF reduces conduction loss while the ultra-short reverse recovery time (15 ns, typical) enables high-speed switching and minimizes switching loss.

With the acquisition of SiCrystal AG, ROHM Semiconductor possesses total manufacturing capability for SiC semiconductors from ingot formation to power device fabrication. This allows the rapid development of advanced products and complete control of raw materials for industry leading reliability and quality.


ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
SCS106AGC datasheet linkDIODE SCHOTTKY 600V 6A TO220ACSCS106AGCDIODE SCHOTTKY 600V 6A TO220AC392 - Immediate
SCS106AGC product page link
SCS108AGC datasheet linkDIODE SCHOTTKY 600V 8A TO220ACSCS108AGCDIODE SCHOTTKY 600V 8A TO220AC1755 - Immediate
SCS108AGC product page link
SCS110AGC datasheet linkDIODE SCHOTTKY 600V 10A TO220ACSCS110AGCDIODE SCHOTTKY 600V 10A TO220AC1637 - Immediate
SCS110AGC product page link
SCS112AGC datasheet linkDIODE SCHOTTKY 600V 12A TO220ACSCS112AGCDIODE SCHOTTKY 600V 12A TO220AC971 - Immediate
SCS112AGC product page link
SCS120AGC datasheet linkDIODE SCHOTTKY 600V 20A TO220ACSCS120AGCDIODE SCHOTTKY 600V 20A TO220AC239 - Immediate
SCS120AGC product page link
Published: 2011-06-29