3rd Generation Trench-Type SiC MOSFETs

ROHM's original design delivers high withstand voltage with low ON-resistance and fast switching speeds

Image of ROHM's 3rd Generation Trench-Type SiC MOSFETsROHM’s 3rd generation SiC MOSFETs utilize a proprietary trench gate structure that reduces ON-resistance by 50% and input capacitance by 35% compared with existing planar-type SiC MOSFETs. This translates to significantly lower switching loss and faster switching speeds, improving efficiency while reducing power loss in a variety of equipment.

Key Advantages

  • Lower ON-resistance improves inverter power density
  • Supports high-speed switching
  • Minimal reverse recovery behavior of the parasitic diode
  • Small Qg and parasitic capacitance
  • Eliminates degradation caused by parasitic diode conduction
  • Compatible with high-temperature operation (Tjmax=175°C)

3rd Generation Trench-Type SiC MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
SICFET N-CH 650V 93A TO247NSCT3022ALGC11SICFET N-CH 650V 93A TO247N0View Details
SICFET N-CH 650V 70A TO247NSCT3030ALGC11SICFET N-CH 650V 70A TO247N0View Details
SICFET N-CH 650V 39A TO247NSCT3060ALGC11SICFET N-CH 650V 39A TO247N30 - ImmediateView Details
SICFET N-CH 650V 21A TO247NSCT3120ALGC11SICFET N-CH 650V 21A TO247N0View Details
SICFET N-CH 1200V 72A TO247NSCT3030KLGC11SICFET N-CH 1200V 72A TO247N30 - ImmediateView Details
SICFET N-CH 1200V 55A TO247NSCT3040KLGC11SICFET N-CH 1200V 55A TO247N0View Details
SICFET N-CH 1200V 31A TO247NSCT3080KLGC11SICFET N-CH 1200V 31A TO247N0View Details
SICFET N-CH 1200V 17A TO247NSCT3160KLGC11SICFET N-CH 1200V 17A TO247N0View Details
Published: 2016-08-15