Automotive-Grade 3rd Generation SiC MOSFETs

ROHM’s AEC-Q101 compliant MOSFETs utilize a trench gate structure

Image of Renesas 3rd Generation Automotive-Grade SiC MOSFETsROHM has added twelve automotive-grade SiC MOSFETs, which provide the high reliability necessary for automotive on-board chargers and DC/DC converters.

In response to growing environmental awareness and rising fuel costs in recent years, an increasing number of automotive makers are offering electric vehicles. However, although EVs are becoming more widespread, their relatively short driving range remains problematic. To improve their driving distance, batteries are trending toward larger battery capacities with shorter charging times. This demands high power and efficiency on-board chargers such as 11 kW and 22 kW, leading to increased adoption of SiC MOSFETs. In addition, higher voltage batteries (800 V) require power devices featuring low loss and higher withstand voltages.

To meet these needs, ROHM added twelve models to its lineup of AEC-Q101 qualified MOSFETs that utilize a trench gate structure. The result is a large portfolio, available in both 650 V and 1200 V variants.

Features
  • AEC-Q101 compliant
  • Available in 650 VDS or 1200 VDS
  • ON resistance: 17 mΩ to 160 mΩ (typ.)
  • RoHS compliant

MOSFETs

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityView Details
AUTOMOTIVE GRADE N-CHANNEL SIC PSCT3120ALHRC11AUTOMOTIVE GRADE N-CHANNEL SIC P650V21A (Tc)197 - ImmediateView Details
AUTOMOTIVE GRADE N-CHANNEL SIC PSCT3160KLHRC11AUTOMOTIVE GRADE N-CHANNEL SIC P1200V17A (Tc)549 - ImmediateView Details
AUTOMOTIVE GRADE N-CHANNEL SIC PSCT3080ALHRC11AUTOMOTIVE GRADE N-CHANNEL SIC P650V30A (Tc)450 - ImmediateView Details
Published: 2019-06-06