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1700 V Silicon Carbide (SiC) Diodes, MOSFETs, and Modules

ROHM introduces its next generation of SiC power devices and modules for improved power savings in many applications

Image of ROHM Semiconductor 1700 V Silicon Carbide (SiC) DiodesSiC is emerging as the most viable candidate in the search for a next-generation, low-loss element due to its low ON resistance and superior characteristics under high temperatures. ROHM is developing SiC power devices and modules for improved power savings in a number of applications, from high efficiency inverters in DC/AC converters for solar/wind power supplies and electric/hybrid vehicles to power inverters for industrial equipment and air conditioners.

Features
  • Low ON resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to driver
  • Pb-free lead plating
  • RoHS-compliant
Applications
  • Solar inverters
  • DC/DC converters
  • Switch-mode power supplies
  • Induction heating
  • Motor drives

1700 V Silicon Carbide (SiC) Diodes, MOSFETs, and Modules

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MOSFET N-CH 1700V 3.7ASCT2H12NZGC11MOSFET N-CH 1700V 3.7A4355 - ImmediateView Details

1200 V and under Silicon Carbide (SiC)

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MOSFET N-CH 1200V 40A TO-247SCH2080KECMOSFET N-CH 1200V 40A TO-2471568 - ImmediateView Details
MOSFET N-CH 1200V 40A TO-247SCT2080KECMOSFET N-CH 1200V 40A TO-2474233 - ImmediateView Details
MOSFET N-CH 650V 29A TO-220ABSCT2120AFCMOSFET N-CH 650V 29A TO-220AB1608 - ImmediateView Details
MOSFET N-CH 1200V 22A TO-247SCT2160KECMOSFET N-CH 1200V 22A TO-2474647 - ImmediateView Details
MOSFET N-CH 1200V 14A TO-247SCT2280KECMOSFET N-CH 1200V 14A TO-2473570 - ImmediateView Details
MOSFET N-CH 1200V 10A TO-247SCT2450KECMOSFET N-CH 1200V 10A TO-247610 - ImmediateView Details
Published: 2016-03-18