M1000/M3000 Series MRAM

Renesas’ high-speed, high-performance, non-volatile MRAM offers superior reliability

Image of Renesas M1000/M3000 Series MRAMRenesas' MRAM family of high-speed, high-performance 108 MHz non-volatile RAM offers superior reliability and greater than 20-year data retention. It does not require backup batteries or capacitors compared to non-volatile SRAM. The M30xx supports quad SPI SDR and DDR interfaces, operates from -40°C to +105°C (industrial plus version), and is available in SOIC or WSON package. The MRAM devices are ideal for high-speed, non-volatile memory applications such as program storage and data backup.

Features
  • Non-volatile memory
  • High endurance: >10E16 cycles
  • Long data retention: >20 years
  • Fast read and write, no wait writes
  • Data protection with hardware protect mode (HPM), user-programmable/lockable special NVM, and software protect mode (SPM)
  • No battery back-up required
  • Utilizes advanced pMTJ STT-MRAM technology
  • Memory density: 4 Mb to 16 Mb
  • High-speed Quad SPI interface, up to 108 MHz SDR mode
  • Lowest active write and read current
  • Independent 256-byte user programmable and lockable NVM
  • Industrial operating temperature: -40°C to +105°C
  • Supply voltage: 1.8 V, 3 V
  • Package: 8-pin SOIC and 8-pad WSON
Applications
  • Industrial controls and automation
  • Medical devices
  • Wearables
  • Network systems
  • Storage/RAID
  • Automotive

MRAM Microcontroller

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
IC RAM 8MBIT SPI/QUAD I/O 8DFNM30082040054X0IWAYIC RAM 8MBIT SPI/QUAD I/O 8DFN99 - ImmediateView Details

MRAM Evaluation Board

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MRAM PROGRAMMING KIT WITH 16MBITM3016-EVKMRAM PROGRAMMING KIT WITH 16MBIT1 - ImmediateView Details
Published: 2020-06-17