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900 V Silicon Carbide (SiC) MOSFETs

ON Semiconductor's MOSFETs provide high-efficiency, increased power density, and reduced system size

Image of ON Semiconductor's 900 V Silicon Carbide (SiC) MOSFETsON Semiconductor's 900 V SiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features
  • 900 V rated
  • Low ON resistance
  • Compact chip size ensures low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101
Applications
  • PFC
  • OBC
  • Boost inverters
  • PV charging
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Network power supplies
  • Server power supplies

900 V Silicon Carbide (SiC) MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
SIC MOS D2PAK 7L 20MOHMNTBG020N090SC1SIC MOS D2PAK 7L 20MOHM762 - Immediate
2400 - Factory Stock
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SIC MOS TO247-3L 20MOHM 9NTHL020N090SC1SIC MOS TO247-3L 20MOHM 9282 - Immediate
9900 - Factory Stock
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SIC MOS TO247-3L 60MOHMNTHL060N090SC1SIC MOS TO247-3L 60MOHM541 - ImmediateView Details
SIC MOS D2PAK 7L 20MOHMNVBG020N090SC1SIC MOS D2PAK 7L 20MOHM203 - ImmediateView Details
SIC MOS TO247-3L 20MOHM 9NVHL020N090SC1SIC MOS TO247-3L 20MOHM 9402 - Immediate
16650 - Factory Stock
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Published: 2020-04-14