MRFX Series RF Transistors
NXP's RF power 65 V LDMOS transistors are used in high-VSWR industrial, medical, broadcast, aerospace, and mobile radio applications
NXP's MRFX series of RF transistors are rated to 1800 W (continuous wave). Based on 65 V LDMOS technology developed in NXP’s internal lab, these products are designed for high performance and ease of use. The move to a 65 V drain voltage increases the output impedance and ensures a higher breakdown voltage. The drop-in compatibility of NXP’s 1250 W, 1500 W, and 1800 W transistors enables customers to create single scalable platforms for multiple end products. As RF becomes more pervasive in various industrial applications, NXP is providing RF power engineers with the means to reduce design cycle time.
NXP also offers the 1800 W plastic-packaged MRFX1K80N. This packaging enables a higher RF output power and 30% lower thermal resistance. It is pin-compatible with the ceramic MRFX1K80H.
Availability and Development Support
The MRFX1K80H transistor in an air cavity ceramic package is currently sampling, with production expected in August 2017. Reference circuits for 27 MHz and 87.5 MHz to 108 MHz applications are available now. Following the release of the MRFX1K80H, NXP will offer an over-molded plastic version, the MRFX1K80N, which reduces the thermal resistance by 30 percent for further reliability and ease-of-use.