MRFX Series RF Transistors

NXP's RF power 65 V LDMOS transistors are used in high-VSWR industrial, medical, broadcast, aerospace, and mobile radio applications

Image of NXP's MRFX series of RF TransistorsNXP's MRFX series of RF transistors are rated to 1800 W (continuous wave). Based on 65 V LDMOS technology developed in NXP’s internal lab, these products are designed for high performance and ease of use. The move to a 65 V drain voltage increases the output impedance and ensures a higher breakdown voltage. The drop-in compatibility of NXP’s 1250 W, 1500 W, and 1800 W transistors enables customers to create single scalable platforms for multiple end products. As RF becomes more pervasive in various industrial applications, NXP is providing RF power engineers with the means to reduce design cycle time.

NXP also offers the 1800 W plastic-packaged MRFX1K80N. This packaging enables a higher RF output power and 30% lower thermal resistance. It is pin-compatible with the ceramic MRFX1K80H.

Availability and Development Support
The MRFX1K80H transistor in an air cavity ceramic package is currently sampling, with production expected in August 2017. Reference circuits for 27 MHz and 87.5 MHz to 108 MHz applications are available now. Following the release of the MRFX1K80H, NXP will offer an over-molded plastic version, the MRFX1K80N, which reduces the thermal resistance by 30 percent for further reliability and ease-of-use.

Features
  • More Power - Higher voltage enables higher output power, which helps decrease the number of transistors to combine, simplifying power amplifiers complexity and reducing their size.
  • Faster Development Time - With higher voltage, the output power can be increased while retaining a reasonable output impedance. This simplifies the matching to 50 Ω, especially in wideband applications. Faster matching dramatically speeds up the development time.
  • Design Reuse - This impedance benefit also ensures pin-to-pin compatibility with current 50 V LDMOS transistors, making it possible for RF designers to reuse existing printed circuit board (PCB) designs for even shorter time to market.
  • Manageable Current Level - A higher voltage lowers the current in the system, limiting the stresses on DC power supplies and reducing magnetic radiation.
  • Wide Safety Margin - The NXP 65 V LDMOS technology has a breakdown voltage of 182 V, which improves reliability and enables higher efficiency architectures.
Applications
  • Laser generation
  • Plasma etching
  • Magnetic-resonance imaging (MRI)
  • Skin treatment and diathermy
  • Particle accelerators and other scientific applications
  • Radio and very-high-frequency (VHF) TV broadcast transmitters
  • Industrial heating, welding, curing or drying machines

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MRFX Series RF Transistors

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
RF MOSFET LDMOS 65V NI-1230H-4SMRFX1K80HR5RF MOSFET LDMOS 65V NI-1230H-4S63 - ImmediateView Details
MRFX1K80H 128MHZ REF DESIGN BRDMRFX1K80H-128MHZMRFX1K80H 128MHZ REF DESIGN BRD2 - ImmediateView Details
MRFX1K80H 230MHZ REF DESIGN BRDMRFX1K80H-230MHZMRFX1K80H 230MHZ REF DESIGN BRD1 - ImmediateView Details
Published: 2017-05-22