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MGJ6 Series DC-DC Converters

Murata's miniaturized DC-DC converters are single device solutions for powering IGBT gate drive circuits

Image of Murata Power Solutions' MGJ6 Series DC-DC ConvertersMurata has released three series of 6 W high isolation DC-DC converters from Murata Power Solutions, which, in the form of single devices, can provide all gate drive power for half-, full-, and three-phase bridge circuits, saving space and cost while providing optimum performance.

Murata’s MGJ6 half-, full-, and three-phase bridge series DC-DC converters are for simultaneously powering "high-side" and "low-side" gate drive circuits for IGBTs, and silicon/silicon carbide MOSFETs in bridge circuits. The devices feature respectively dual, triple, and quad independent outputs that are externally configurable with a simple circuit to provide positive and negative voltages for gate drive power. By being able to use just one device for powering all gate drives in a bridge application, the space saving achieved is a significant 33 - 50%. For example, in a three-phase bridge, the four-output MGJ63P provides isolated power for the three high-side switch drivers and a common rail for the three low-side switch drivers, potentially replacing up to six discrete DC-DC converters.

The DC-DC converters offer a wide 2:1 input voltage range with nominal inputs of 5 V, 12 V, and 24 V and two, three, or four output channels of 24 V are provided with high isolation between outputs. Exhibiting versatility, outputs can also be connected in parallel or series. Providing reliable operation in the fastest of switching systems, the devices are suitable for DC link voltages up to 3 kVDC and feature a characterized dv/dt immunity of 80 kV/microsecond and a characterized partial discharge performance that provides long service life.

The design of the DC-DC converters includes many inherent features and aspects that enhance performance, reliability, and repeatability. These include a planar transformer, short circuit and overload protection for robust operation under system fault conditions, and a very low coupling capacitance of typically 15 pF that reduces system EMI problems. A frequency synchronization pin simplifies EMC filter design and an enable pin provides for power saving.

A pending application for UL60950 recognition for reinforced insulation will reduce the overall cost of system approval. Similarly, approvals for ANSI/AAMI ES60601-1, 2xMOOP, and 2xMOPP at different system voltage levels are pending and when attained will simplify system approval for medical applications.

Additionally, Murata has expanded its family of MGJ6 series of isolated, 6 W DC-DC converters for powering "high side" and "low side" gate drive circuits for IGBTs, and silicon/silicon carbide MOSFETs in bridge circuits.

The original models come in a SMT package with height of 14.19 mm. Murata now offers a low profile SMT package with height of 9.15 mm, and both a vertical SIP and horizontal DIP through-hole package. All these models offer configurable dual output voltages of +15 V/-10 V, +20 V/-5 V, and +15 V/-5 V with input ranges of either 4.5 V to 9 V, 9 V to 18 V, or 18 V to 36 V.

Murata most recent release includes three series of 6 W high isolation DC-DC converters, which, in the form of single devices, can provide all gate drive power for half-, full-, and three-phase bridge circuits, saving space and cost while providing optimum performance.

Features
  • No opto feedback
  • Patents pending
  • Two, three, or four isolated output voltages for IGBT/SiC and MOSFET gate drives in half bridge configuration
  • Reinforced insulation to UL60950 with 8 mm creepage and clearance recognition pending
  • ANSI/AAMI ES60601-1 recognition pending
  • Characterized dv/dt immunity 80 kV/μs at 1.6 kV
  • Characterized partial discharge performance
  • 5.2 kVDC isolation test voltage "Hi Pot Test"
  • Ultra-low coupling capacitance typically 15 pF
  • DC link voltage 3 kVDC
  • 5 V, 12 V, and 24 V input voltages
  • 105°C operating temperature

Applications

  • Ideal for powering IGBT gate drive circuits where high isolation and high efficiency are paramount
Published: 2017-04-25