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MADP-011029-14150T, 50 MHz to 12 GHz, High-Power PIN Diode

MACOM's MADP-011029-14150T features a three-terminal LPF broadband shunt structure

Image of Macom's High-Power PIN DiodeThe MACOM's high-power PIN diode, MADP-011029, in a lead-free, 1.5 mm x 1.2 mm, 6-lead, DFN, surface-mount, plastic package provides both low and high signal frequency operation from 50 MHz to 12 GHz. The higher breakdown voltage and lower thermal resistance of the PIN diode provides peak power handling in excess of 100 W. This device is ideally suitable for usage in higher incident power switches, phase shifters, attenuators, and limiter microwave circuits over a broad frequency where higher performance, surface-mount diode assemblies are required.

Features Functional Block Diagram
  • Three-terminal LPF broadband shunt structure
  • 50 MHz to 12 GHz broadband frequency
  • > 100 W peak power handling
  • RoHS-compliant and 260°C reflow compatible
  • > 25 dB shunt isolation
  • < 0.1 dB shunt insertion loss
  • < 20°C/W thermal resistance
  • Lead-free, 1.5 mm x 1.2 mm, 6-lead TDFN package
 Image of Macom's High-Power PIN Diode

High-Power PIN Diode

ImageManufacturer Part NumberDescriptionDiode TypeAvailable QuantityView Details
RF DIODE PIN 400V 7.5W 6TDFNMADP-011029-14150TRF DIODE PIN 400V 7.5W 6TDFNPIN - Single6615 - ImmediateView Details
Published: 2017-03-31