Infineon XX

Technology Leadership Extended

Infineon, the leader in power adds GaN to its portfolio

Infineon is uniquely positioned in the power semiconductor market, mastering all power technologies from silicon (Si) like CoolMOS™ SJ MOSFETs and IGBTs to wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Its CoolGaN™ devices will significantly enhance designer’s ability to deliver the compact, high performance power systems of the future.

Take now the opportunity to discover Infineon’s newly launched portfolio of CoolGaN™ switches in SMD packages. Perfectly combinable with dedicated single-channel functional and reinforced isolated EiceDRIVER™ gate driver IC parts. Enter a new era of efficiency with Infineon.

Why GaN from Infineon?

What turns Infineon into your best choice when it comes to GaN based solutions?

The four pillars of success that make the difference:

  1. Extensive system expertise
    • Focus on system performance/cost ratio
    • GaN-on-Si for price competitiveness
    • Global application design support
  2. Unique power technology portfolio
    • Expertise in all leading power technologies (Si, SiC, GaN, GaN-on-Si)
    • Huge and substantial IP and strong GaN patent portfolio
  3. Application-dedicated products
    • Comprehensive power portfolio ensures best fit every time (Si, SiC and GaN)
  4. Benchmark in manufacturing
    • First GaN switches in SMD packages with fully owned supply chain


CoolGaN™ 600 V e-mode HEMTs - Key Features & Benefits

Infineon’s CoolGaN™ is the most reliable and highly qualified GaN solutions currently available in the market and offers a predicted lifetime of more than 15 years, with a failure rate less than 1Fit. With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance enabling rugged and reliable systems at an attractive overall system cost. The e-mode concept is a single-chip solution and hence facilitates further integration either on the chip or package level.

GaN switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. Infineon’s CoolGaN™ 600 V impresses with highest PFC efficiency (>99.3% for 2.5 kW PFC) and highest density for same efficiency (>160 W/in3 for 3.6 kW LLC with >98% efficiency).

The CoolGaN™ portfolio is built around high performing bottom- and top-side cooling SMD packages supporting high frequency operations. Lower parasitics and good thermal performance guarantee to fully exploit the benefits of GaN.

Infineon’s qualification plan for its GaN switches follows a dedicated approach well beyond Si standards (e.g. JEDEC) thereby setting the next level of wide-bandgap quality. Application profiles (incl. most stringent and challenging applications requiring +15 years lifetime, e.g. server / telecom) are an integral part of the qualification. Failure models – based on accelerated test conditions – ensure that in the field a target lifetime and quality are met.

Target applications: servers, hyperscale datacenters, telecom, wireless charging, chargers, adapters, SMPS

Key Features

  • Best FOM of 600 V power devices
  • Excellent for hard and soft switching topologies
  • Optimized for turn-on and turn-off
  • Zero reverse recovery charge
  • The cutting-edge technology for innovative solutions and high volumes
  • Compared to Si technology:
  • 10x higher breakdown field and 2x higher mobility
  • 10x lower output charge
  • 10x lower gate charge and linear Coss characteristic

Key Benefits

  • Highest efficiency for SMPS; excellent efficiency in resonant circuits
  • Highest power density enables small and light designs
  • Surface mount (SMD) packaging ensures that switching capabilities of GaN are fully accessed
  • Easy to use thanks to a compelling driver IC portfolio
  • Very low RDS(on) and large cost-down potential
  • New topologies and current modulation
  • Fast (and nearly lossless) switching


  Part Number Description RDS(on) max. Package
Datasheet XX IGO60R070D1 IC GAN FET 600V 60A 20DSO 70 mΩ DSO-20-85
Bottom-side cooling
Datasheet XX IGOT60R070D1 IC GAN FET 600V 60A 20DSO 70 mΩ DSO-20-87
Top-side cooling
Datasheet XX IGT60R070D1 IC GAN FET 600V 60A 8HSOF 70 mΩ HSOF-8-3
Datasheet XX IGLD60R070D1 IC GAN FET 600V 60A 8SON 70 mΩ PG-LSON-8-1
Datasheet XX IGT60R190D1 IC GAN FET 600V 23A 8HSOF 190 mΩ HSOF-8-3



GaN EiceDRIVER™ Gate Driver ICs - Key Features & Benefits

Every high-voltage GaN switch needs a dedicated driver IC to benefit from:

  • Negative gate-driver voltage -> protection against spurious turn-on
  • Two off-voltage levels -> least dead time losses
  • Excellent timing accuracy -> best system efficiency
  • Constant switching transients -> least R&D effort
  • Best robustness
  • Reduced driver complexity and no need of customized drivers

The new drivers with high gate current for fast turn-on and robust gate drive topology have been developed to optimize the performance of enhancement mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage.

Target applications: high-voltage bridgeless totem pole PFC stages and high-voltage resonant LLC stages in telecom and server SMPS, active-clamping flybacks in AC adapters, three-phase motor drives, class E wireless charging, class D audio amplifiers.

Key Features

  • Output impedance:
    • RDS(on) source - 0.85 Ω
    • RDS(on) sink - 0.35 Ω
  • Input-output propagation delay accuracy: -6 ns / +7 ns
  • CMTI: > 150 V/ns
  • Galvanic isolation
  • Package:
    • 1EDF5673K: 13-pin LGA 5x5 mm
    • 1EDF5673F: 16-pin DSO 150 mil
    • 1EDS5663H: 16-pin DSO 300 mil
  • Placement:
    • Totem-pole PFC
    • Resonant LLC
  • Pace: 18 ns minimum output pulse-width
  • Precision: 13 ns propagation delay window
    • Negative gate drive voltage for the 1st pulse

Key Benefits

  • Complete support of all requirements specific to enhancement GaN HEMTs operation
  • Switching behavior independent from duty cycle
  • Integrated galvanic isolation for
    • High power density of the application design
    • Excellent system-level timing accuracy
    • Robust common mode transient immunity (CMTI)


High-efficiency GaN switched mode power supply (SMPS)

GaN EiceDRIVER™ Product Portfolio

  Part Number Description Isolation Class
Datasheet XX 1EDF5673FXUMA1 IC DRIVER IC GAN LGA-13 functional
Datasheet XX 1EDF5673KXUMA1 IC DRIVER IC GAN LGA-13 functional
Datasheet XX 1EDS5663HXUMA1 IC DRIVER IC GAN DSO-16 reinforced



Infineon's Recommended Reference Designs and Evaluation Kits

EVAL_2500W_PFC_GAN_A - 2500 W full-bridge totem-pole power factor correction evaluation board

This 2.5 kW CCM full-bridge PFC evaluation board utilizes the advantages of Infineon’s CoolGaN™ technology to boost system efficiency above 99 percent for efficiency-critical applications such as server power supplies or telecom rectifiers. The board features CoolGaN™ 600 V e-mode HEMTs, CoolMOS™ C7 Gold superjunction MOSFET and EiceDRIVER™ gate driver ICs.

Target applications: SMPS, Server PSU and telecom rectifiers

Key Features and Benefits

  • Flat efficiency >99 percent over wide load range
  • Suitable reference design for high efficiency, high power density server PSU and telecom rectifiers
  • Highest efficiency with similar system BOM costs as of the next best Si-based alternatives for PFC topologies


  Part Number Description
Datasheet EVAL2500WPFCGANATOBO1 EVAL2500WPFCGANATOBO1 2500 W Full Bridge Totem Evaluation Board

EVAL_1EDF_G1_HB_GAN - CoolGaN™ 600 V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™

This 600V GaN half-bridge evaluation platform enables easy, rapid setup and test of Infineon’s CoolGaN™ transistors and GaN EiceDRIVER™ ICs. The generic topology can be configured for boost or buck operation, pulse testing or continuous full-power operation. Test points provide easy access to connect signals to an oscilloscope, to measure the switching performance of CoolGaN™ transistors and gate driver. This board saves the user from having to design their own gate driver and power circuit to evaluate GaN transistors.

Target applications: none specific -> platform to evaluate GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications

Key Features and Benefits

  • Simple GaN half-bridge with dedicated GaN driver ICs
  • Capable of multi-MHz switching frequencies
  • Zero reverse-recovery – can shift between hard or soft-switching
  • GaN transistors feature topside cooling for high power dissipation
  • Easy setup and use
  • Multiple configurations possible
  • Evaluate high-frequency capabilities of GaN
  • Evaluate waveforms with low ringing, overshoot, EMI
  • Enables easy evaluation at multi-kilowatt power levels


  Part Number Description
Datasheet EVAL1EDFG1HBGANTOBO1 EVAL1EDFG1HBGANTOBO1 600 V CoolGaN EiceDRIVER Evaluation Platform