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1200 V Silicon Carbide Schottky Diode

Infineon’s Schottky diodes reduce the risk of partial discharge at high-voltage and high-frequency operation

Image of Infineon 1200 V Silicon Carbide Schottky DiodeInfineon's CoolSiC™ Generation 5, 1200 V, 10 A Schottky diodes are available in a D²PAK real 2-pin package. By connecting SiC diodes in parallel and in a small device package, a highly efficient system can be achieved while minimizing board space requirements. The elimination of the middle pin reduces the risk of partial discharge at high-voltage and high-frequency operation.

Features

  • Zero ORR leading to no reverse recovery losses
  • High surge current capability
  • Real 2-pin package with 4.7 mm creepage and 4.4 mm clearance distances
  • Tight forward voltage distribution
  • Temperature-independent switching behavior
  • Low forward voltage
  • Enables higher-frequency/increased power density in compact designs
  • System size/cost savings due to reduced heatsink requirements and smaller magnetics
  • Reduced risk of partial discharge on the surface (real 2-pin)
  • System efficiency improvement over Si diodes
  • System reliability improvement
  • Reduced EMI
  • RoHS II standard compliant (Lead-free die attach)
Applications
  • Solar energy system solutions
  • Motor control and drives
  • Uninterruptible power supplies (UPS)
  • Industrial SMPS
  • Fast EV-charging
  • Industrial heating and welding
  • Commercial, construction, and agricultural vehicles (CAV)

Resources

1200 V Schottky Diode

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
SIC DISCRETEIDK10G120C5XTMA1SIC DISCRETE685 - ImmediateView Details
Published: 2020-05-22