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Silicon Carbide Schottky Diode

Silicon Carbide Power Schottky diodes from GeneSiC Semiconductor

Image of GeneSiC's Silicon Carbide Schottky DiodeGeneSiC Semiconductor introduces their Silicon Carbide Power Schottky diode. The advantage of these products is improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance, and low reverse leakage current at operating temperature. At 1200 V, customers have a wide range of amperages and package sizes. These products are RoHS compliant.

Features
  • 1200 V Schottky rectifier
  • 175°C maximum operating temperature
  • Temperature independent switching behavior
  • Superior surge current capability
  • Positive temperature coefficient of Vf
  • Extremely fast switching speeds
  • Superior figure of merit Qc/If
Applications
  • Power factor correction (PFC)
  • Switched-mode power supply (SMPS)
  • Solar inverters
  • Wind turbine inverters
  • Motor drives
  • Induction heating
  • Uninterruptible power supply (UPS)
  • High voltage mulipliers

Arrays

ImageManufacturer Part NumberDescriptionAvailable Quantity
SIC DIODE 1200V 10A TO-247-3GC2X5MPS12-247SIC DIODE 1200V 10A TO-247-3358 - ImmediateView Details
SIC DIODE 1200V 20A TO-247-3GC2X10MPS12-247SIC DIODE 1200V 20A TO-247-3202 - ImmediateView Details
SIC DIODE 1200V 100A SOT-227GB2X50MPS12-227SIC DIODE 1200V 100A SOT-22779 - ImmediateView Details

Single

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
DIODE SCHOTTKY 1.2KV 2.5A SMBGB01SLT12-214DIODE SCHOTTKY 1.2KV 2.5A SMB0View Details
DIODE SCHOTTKY 3.3KV 300MA DO214GAP3SLT33-214DIODE SCHOTTKY 3.3KV 300MA DO2145533 - ImmediateView Details
DIODE SCHOTTKY 3.3KV 300MA TO220GAP3SLT33-220FPDIODE SCHOTTKY 3.3KV 300MA TO220681 - ImmediateView Details
Updated: 2019-02-19
Published: 2013-02-05