P-Ch PowerTrench® MOSFETs

ON Semiconductor's latest medium voltage power 100 V, 150 V PowerTrench MOSFETs

Image of Fairchild's P-Ch PowerTrench® MOSFETsON Semiconductor latest medium voltage power 100 V, 150 V PowerTrench MOSFETs are optimized power switches combining small gate charge (Qg), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. The latest 100 V, 150 V PowerTrench MOSFETs employ shielded-gate structure that provides charge balance.

By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66 percent lower than that of previous generations. Soft body diode performance of new PowerTrench MOSFETs is able to eliminate snubber circuit or replace higher voltage rating MOSFET circuit need because it can minimize the undesirable voltage spikes in synchronous rectification. The latest 100 V, 150 V PowerTrench MOSFETs provide designers the opportunity to significantly increase system efficiency and power density in synchronous rectification applications.


ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
FDMC86259P datasheet linkMOSFET P-CH 150V 13A POWER33FDMC86259PMOSFET P-CH 150V 13A POWER332980 - Immediate
FDMC86259P product page link
FDMC86139P datasheet linkMOSFET P-CH 100V 4.4A 8MLPFDMC86139PMOSFET P-CH 100V 4.4A 8MLP0FDMC86139P product page link
FDMS86263P datasheet linkMOSFET P-CH 150V 22A POWER 56FDMS86263PMOSFET P-CH 150V 22A POWER 560FDMS86263P product page link
FDMC86261P datasheet linkMOSFET P-CH 150V 2.7A 8MLPFDMC86261PMOSFET P-CH 150V 2.7A 8MLP0FDMC86261P product page link
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Published: 2014-05-28