This N-channel MOSFET is produced using ON Semiconductor advanced Power Trench process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.
- Shielded gate MOSFET technology
- Max RDS(ON) = 6.5 mΩ at VGS = 10 V, ID = 14 A
- Max RDS(ON) = 8.5 mΩ at VGS = 8 V, ID = 12 A
- High-performance technology for extremely-low RDS(ON)
- Termination is lead-free