FDMC86340 80 V N-Channel Shielded Gate Power Trench® MOSFET

ON Semiconductor's FDMC86340 incorporates shielded gate technology

Image of Fairchild's FDMC86340 80 V N-Channel Shielded Gate Power Trench® MOSFETThis N-channel MOSFET is produced using ON Semiconductor advanced Power Trench process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.


  • Shielded gate MOSFET technology
  • Max RDS(ON) = 6.5 mΩ at VGS = 10 V, ID = 14 A
  • Max RDS(ON) = 8.5 mΩ at VGS = 8 V, ID = 12 A
  • High-performance technology for extremely-low RDS(ON)
  • Termination is lead-free
  • RoHS-compliant

80 V N-Channel MOSFET

ImageManufacturer Part NumberDescriptionFET TypeTechnologyAvailable QuantityView Details
FDMC86340 datasheet linkMOSFET N-CH 80V 48A POWER33FDMC86340MOSFET N-CH 80V 48A POWER33N-ChannelMOSFET (Metal Oxide)0FDMC86340 product page link
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Published: 2013-09-17