FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET

ON Semiconductor's FDMC8360L is optimized for on-state resistance

Image of Fairchild's FDMC86340 80 V N-Channel Shielded Gate Power Trench® MOSFETThis N-channel MOSFET is produced using ON Semiconductor advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized for on-state resistance and maintains superior switching performance.

  • Shielded gate MOSFET technology
  • Max RDS(ON) = 2.1 mΩ at VGS = 10 V, LD = 27 A
  • Max RDS(ON) = 3.1 mΩ at VGS = 4.5 V, LD = 22 A
  • High-performance technology for extremely-low RDS(ON)
  • Termination is lead-free
  • 100% UIL tested
  • RoHS-compliant

40V N-Channel MOSFET

ImageManufacturer Part NumberDescriptionFET TypeTechnologyAvailable QuantityView Details
FDMC8360L datasheet linkMOSFET N-CH 40V 80A POWER33FDMC8360LMOSFET N-CH 40V 80A POWER33N-ChannelMOSFET (Metal Oxide)0FDMC8360L product page link
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Published: 2013-09-17