GaN Performance at MOSFET Value

EPC introduces eGaN® FETs, which deliver the performance of GaN at the price of silicon

Image of EPC's GaN® Performance at MOSFET ValueEPC presents eGaN FETs that break silicon’s cost-speed barrier by delivering the performance of GaN at the price of silicon. GaN-based transistors can be found in over 1,000 designs in applications such as envelope tracking for 4G/LTE base stations, LiDAR systems for autonomous vehicles, Class-D audio systems, satellites, automotive lighting, wireless power transmitters, AC-DC and DC-DC power supplies, to name just a few. The designers of the earliest applications were driven to GaN based on the faster speeds and higher performance over silicon devices. Faster switching can translate into smaller size, higher efficiency, and lower system cost. GaN transistors switch ten times faster than silicon devices. In order to get this enhanced performance, customers paid a premium price for the state-of-the art in power transistors.

Now that is changing. For the first time in 60 years there is a non-silicon technology that has both superior performance and price. eGaN FETs that are not only much faster and smaller than power MOSFETS, but comparably priced are now available.

GaN has opened up entirely new markets for products in medical, automotive, consumer, and telecommunications that would not exist but for the improved performance enabled by this technology. These are fun applications, like augmented reality and advanced gaming features. In addition, there are applications designed to add great convenience to our lives, like wireless power and autonomous vehicles. But most significantly, they are life-changing applications, like mobile communications in developing countries, colonoscopies-in-a-pill, and wireless heart pumps that dramatically improve the quality of life for those using them.

Features
  • Superior performance
  • Smaller size
  • High reliability
  • Low price-point

GaN Performance at MOSFET Value

ImageManufacturer Part NumberDescriptionFET TypeTechnologyAvailable QuantityView Details
EPC2035 datasheet linkTRANS GAN 60V 1A BUMPED DIEEPC2035TRANS GAN 60V 1A BUMPED DIEN-ChannelGaNFET (Gallium Nitride)13193 - Immediate
EPC2035 product page link
EPC9049 datasheet linkBOARD DEV EPC2035 60V EGAN FETEPC9049BOARD DEV EPC2035 60V EGAN FETHalf H-Bridge Driver (External FET)No10 - Immediate
EPC9049 product page link
EPC2036 datasheet linkTRANS GAN 100V 1A BUMPED DIEEPC2036TRANS GAN 100V 1A BUMPED DIEN-ChannelGaNFET (Gallium Nitride)528417 - Immediate
EPC2036 product page link
EPC9050 datasheet linkBOARD DEV EPC2036 100V EGAN FETEPC9050BOARD DEV EPC2036 100V EGAN FETHalf H-Bridge Driver (External FET)No44 - Immediate
EPC9050 product page link
Published: 2015-04-28
Updated : 2017-03-01