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Cypress Fail-Safe Storage Solutions for Industrial Applications

With over 3 decades of memory leadership, Cypress provides advanced NOR Flash and RAM technology for factory automation, medical, smart energy, and a wide range of other industrial systems.

Cypress is celebrating 35 of leadership in the discrete memory semiconductor industry. Since we introduced our first Random Access Memory in 1982, we have built on that pedigree by bringing the best of breed memory technologies under the Cypress banner. Today Cypress offers our customers the highest performance and reliability NOR Flash, NAND Flash, SRAM, nvSRAM and F-RAM with discrete memory densities ranging from 4K-bit to 1G-bit. With unmatched quality and supply commitment, as well as a strong plan for future investment in new memory products, Cypress will continue to be an industry leader in discrete memory semiconductors for decades to come.

  • Nonvolatile Memory
  • Volatile Memory
  • Resources

 

Uses Technology Families & Density Features Interface Quick Reference

Nonvolatile
Memory

Serial NOR Flash

65nm Floating Gate
64Mb – 256Mb

  • Read BW 66 MB/s
  • Uniform 4KB Sectors
  • 3V
  • 20 year data retention
  • WSON-8, SOIC-8, SOIC-16, BGA-24
QSPI (x1, x2, x4)

FL-L Serial NOR Flash

Serial NOR Flash

65nm MirrorBit
64Mb – 1Gb

  • Read BW 100 MB/s (QSPI) / 333 MB/s (HyperBus)
  • Hybrid / Uniform Sector Size options
  • 1.8V & 3V Options
  • Built-in ECC
  • 20 year data retention
  • WSON-8, SOIC-8, SOIC-16, BGA-24
QSPI (x1, x2, x4)

FL-S Serial NOR Flash (3V)
FS-S Serial NOR Flash (1.8V)
KL-S Serial NOR Flash (3V)
KS-S Serial NOR Flash (1.8V)

Serial NOR Flash

45nm MirrorBit
Semper™ Flash
256Mb – 4Gb

  • Read BW 400 MB/s
  • Hybrid / Uniform Sector Size options
  • 1.8V & 3V Options
  • Built-in ECC, CRC, Diagnostic Features
  • Functional Safety Compliant (ISO 26262)
  • 25 year data retention (or) 1M+ endurance cycles
  • WSON-8, SOIC-16, BGA-24
QSPI (x1, x2, x4)
HyperBus (x1, x8)
Octal SPI (x1, x8)

Semper™ NOR Flash

Parallel NOR Flash

65nm MirrorBit
64Mb – 2Gb

  • 70ns Initial Access / 15ns Page Access
  • Uniform 128KB Sectors
  • 3V
  • BGA-64, TSOP-56
Parallel (x16)

GL-S Parallel NOR Flash

Parallel NOR Flash

45nm MirrorBit
512Mb – 2Gb

  • 100ns Initial Access / 15ns Page Access
  • Uniform 128KB Sectors
  • 3V
  • BGA-54, BGA-64, TSOP-56
Parallel (x8, x16)

GL-T Parallel NOR Flash

NVRAM

F-RAM
4Kb – 8Mb

  • Fast write speed, Instant data capture
  • Virtually innite endurance
  • Ultra Low Energy
Parallel (x8, x16)
SPI, I2C

F-RAM
Excelon™ F-RAM

NVRAM

nvSRAM
256Kb – 16Mb

  • Innite endurance to SRAM
  • Automatic nonvolatile store on power loss
  • 25ns access
Parallel (x8, x16)
QSPI, SPI, I2C

nvSRAM

 

Uses Technology Families & Density Features Interface Quick Reference

Volatile
Memory

Asynchronous RAM

Fast
256Kb - 32Mb

  • Available in ECC, non-ECC options
  • 10ns access time
Parallel
(x8, x16, x32)

AsyncSRAM

Asynchronous RAM

MicroPower
256Kb - 64Mb

  • Available in ECC, non-ECC options
  • ISB2 max 0.5μA/Mb
Parallel
(x8, x16, x32)

AsyncSRAM

Synchronous RAM

Standard Sync

  • RTR 250MT/s
  • Max B/W 18 Gbps
Parallel
(x18, x32, x36)

SyncSRAM

Synchronous RAM

NoBL Sync

  • RTR 250 MT/s
  • Max B/W 18 Gbps
Parallel
(x18, x36, x72)

SyncSRAM

HyperRAM

PSRAM
64Mb - 128Mb

  • Read BW 333 MB/s (166 MHz DDR)
  • Congurable Burst Length
HyperBus (12 pin)

HyperBus

Uses Technology Families & Density Features Interface Quick Reference

MCP
Memory

HyperFlash +
HyperRAM

65nm MirrorBit
Flash
256Mb – 512Mb
+
PSRAM 64Mb

  • Read BW 333 MB/s
  • Flash
  • Hybrid / Uniform Sector Size options
  • 1.8V & 3V Options
  • Built-in ECC
  • 20 year data retention
  • PSRAM
  • Congurable Burst Length
  • BGA-24
HyperBus (12 pin)

HyperFlash +
HyperRAM MCP