BSS138LT1 Datasheet by onsemi

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© Semiconductor Components Industries, LLC, 2016
March, 2019 Rev. 12
1Publication Order Number:
BSS138LT1/D
BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
NChannel SOT23
Typical applications are DCDC converters, power management in
portable and batterypowered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
Low Threshold Voltage (VGS(th): 0.85 V1.5 V) Makes it Ideal for
Low Voltage Applications
Miniature SOT23 Surface Mount Package Saves Board Space
BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 50 Vdc
GatetoSource Voltage Continuous VGS ±20 Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
ID
IDM
200
800
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range
TJ, Tstg 55 to 150 °C
Thermal Resistance,
JunctiontoAmbient
RqJA 556 °C/W
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
1
2
Device Package Shipping
ORDERING INFORMATION
NChannel
SOT23
CASE 318
STYLE 21
J1 MG
G
MARKING
DIAGRAM
2
1
3
200 mA, 50 V
RDS(on) = 3.5 W
BSS138LT1G,
BVSS138LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
BSS138LT7G SOT23
(PbFree)
3,500 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.onsemi.com
1
J1 = Device Code
M = Date Code*
G= PbFree Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BSS138LT3G,
BVSS138LT3G
SOT23
(PbFree)
10,000 / Tape & Reel
(Note: Microdot may be in either location)
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BSS138L, BVSS138L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS 50 Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C)
IDSS
0.1
0.5
5.0
mAdc
GateSource Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS ±0.1 mAdc
ON CHARACTERISTICS (Note 1)
GateSource Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th) 0.85 1.5 Vdc
Static DraintoSource OnResistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
5.6
10
3.5
W
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs 100 mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss 40 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss 12 25
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss 3.5 5.0
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) td(on) 20 ns
TurnOff Delay Time td(off) 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
“7:200 mA www.cnsemi.com
BSS138L, BVSS138L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
Figure 1. OnRegion Characteristics
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Transfer Characteristics
Figure 3. OnResistance Variation with
Temperature
VGS = 10 V
ID = 0.8 A
-55 -5 45 95 145
0.6
0.8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
4
0
QT, TOTAL GATE CHARGE (pC)
8
500
VDS = 40 V
TJ = 25°C
1000
ID = 200 mA
1500
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.5 A
2000
10
2
6
Vgs(th) , VARIANCE (VOLTS)
1
TJ, JUNCTION TEMPERATURE (°C)
ID = 1.0 mA
-55 -5 45 95 145
0.75
0.875
1.125
1.25
0
0.3
0.4
0.1
0.6
0.2
Figure 4. Threshold Voltage Variation
with Temperature
1 1.5 2 2.5 3
ID, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Gate Charge
VDS = 10 V
150°C
25°C
-55°C
3.5
0.5
4
024 10
0
0.3
0.4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
6
0.1
8
0.6
0.2
0.5
13 957
VGS = 3.25 V
VGS = 2.75 V
VGS = 2.5 V
VGS = 3.0 V
VGS = 3.5 V
0.7
0.8
TJ = 25°C
0.7
0.8
0.9
4.50.50
2.2
-30 20 70 120
2500 3000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
125°C
Figure 6. IDSS
1.0E-9
1.0E-8
10 15 20 25 30 35
1.0E-7
40
1.0E-6
1.0E-5
505045
150°C
IDSS, DRAIN-TO-SOURCE LEAKAGE (A)
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BSS138L, BVSS138L
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4
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 7. OnResistance versus Drain Current
0 0.1 0.2
2
5
6
Figure 8. OnResistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 9. OnResistance versus Drain Current
0.001
0.1
1
Figure 10. OnResistance versus Drain
Current
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
ID, DIODE CURRENT (AMPS)
25°C
VGS = 2.5 V
TJ = 150°C
4
0 0.2 0.4 0.6
3
0.01
-55°C25°C
0.8
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.1 0.2
1
7
ID, DRAIN CURRENT (AMPS)
VGS = 2.75 V
5
3
0
120
40
0
80
510
Ciss
15
0.05 0.15 0.25
150°C
-55°C
6
8
4
2
0.05 0.15 0.25
201.0 1.2
150°C
25°C
-55°C
8
9
7
100
20
60
Figure 12. Capacitance
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.40.05
1
2.5
3
ID, DRAIN CURRENT (AMPS)
25°C
VGS = 4.5 V
2
1.5
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.40.05
1
4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
3
2
0.1 0.3 0.5
150°C
-55°C
3.5
4.5
2.5
1.5
0.1 0.3 0.5
150°C
25°C
-55°C
4
4.5
3.5
10
1
0.25 0.450.15 0.35
5
5.5
6
0.25 0.450.15 0.35
25
Coss
Crss
VGS = 2.75 V
TJ = 25°C
f = 1 MHz
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
BSS138L, BVSS138L
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5
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) LIMIT
0.001
1
0.01
Figure 13. Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (V)
IDS, DRAINTOSOURCE CURRENT (A)
0.1 10
1
TA = 25°C
VGS 10 V 1 ms
10 ms
dc
0.1
THERMAL LIMIT
PACKAGE LIMIT
100
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SOT23 (TO236)
CASE 31808
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= PbFree Package
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODEANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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PAGE 1 OF 1
SOT23 (TO236)
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
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1
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