BS170 Datasheet by onsemi

© Semiconductor Components Industries, LLC, 2011
November, 2017 − Rev. 7 1Publication Order Number:
BS170/D
BS170
Small Signal MOSFET
500 mA, 60 Volts
N−Channel TO−92 (TO−226)
Features
This is a Pb−Free Device*
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage VDS 60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current (Note) ID0.5 Adc
Total Device Dissipation @ TA = 25°C PD350 mW
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
BS170
AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO−92 (TO−226)
CASE 29
STYLE 30
N−Channel
S
123
1
Drain
3
Source
2
Gate
500 mA, 60 Volts
RDS(on) = 5.0 W
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(Note: Microdot may be in either location)
BS170
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
IGSS 0.01 10 nAdc
Drain−Source Breakdown Voltage
(VGS = 0, ID = 100 mAdc)
V(BR)DSS 60 90 − Vdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(Th) 0.8 2.0 3.0 Vdc
Static Drain−Source On Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
rDS(on) 1.8 5.0 W
Drain Cutoff Current
(VDS = 25 Vdc, VGS = 0 Vdc)
ID(off) 0.5 mA
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mAdc)
gfs 200 − mmhos
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
Ciss 60 pF
SWITCHING CHARACTERISTICS
Turn−On Time
(ID = 0.2 Adc) See Figure 1
ton 4.0 10 ns
Turn−Off Time
(ID = 0.2 Adc) See Figure 1
toff 4.0 10 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
BS170 TO−92 (TO−226)
(Pb−Free)
1000 Unit/Tube
BS170RLRAG TO−92 (TO−226)
(Pb−Free)
2000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
l :1 Figure 1. Swikching Test Circ 6; a. z s ._ z m u: u: 3 o ; —» 1-
BS170
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3
, DRAIN CURRENT (AMPS)
D(on)
I
, DRAIN CURRENT (AMPS)
D(on)
I
Figure 1. Switching Test Circuit
20 dB
50 W ATTENUATOR
PULSE GENERATOR
+25 V
Vin
40 pF
1.0 MW
50 W
125 W
50 W
Vout
TO SAMPLING SCOPE
50 W INPUT
OUTPUT
INVERTED
INPUT PULSE
WIDTH
10%
50%
10%
90%
90%
toff
ton
Figure 2. Switching Waveforms
RESISTIVE SWITCHING
(Vin Amplitude 10 Volts)
Vin
Vout
2.0
1.6
1.2
0.8
0.4
0
, THRESHOLD VOLTAGE
50 150
050
100
TJ, JUNCTION TEMPERATURE (°C)
VGS(th)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.8
0.4
1.2
2.0
1.6
1.0 2.0 3.0 4.00
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.8
0.4
1.2
1.6
2.0
01020 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
0 10 2030 4050
60
40
20
80
100
40 60
Figure 3. VGS(th) Normalized versus Temperature Figure 4. On−Region Characteristics
Figure 5. Output Characteristics Figure 6. Capacitance versus
Drain−To−Source Voltage
VGS = 10 V
VGS = 0 V
Ciss
Coss
Crss
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
VDS = VGS
ID = 1.0 mA
VGS = 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
BS170
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4
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
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BS170/D
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