Z0107MA0 Datasheet by WeEn Semiconductors

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#2 mm mm‘um Table 1. Quick reference data full sine wave Fig. 1 Fig. 2 Fig. 3 ve; TiUnil) = 25 Fig. 4 Fig. 5
Z0109MA0
4Q Triac
17 September 2018 Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended
for use in applications requiring enhanced noise immunity and direct interfacing to logic ICs and
low power gate drivers.
2. Features and benefits
Direct interfacing to logic level ICs
Enhanced current surge capability
Enhanced noise immunity
High blocking voltage of 600V
Planar passivated for voltage ruggedness and reliability
Sensitive gate in four quadrants
Triggering in all four quadrants
3. Applications
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage
- - 600 V
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
- - 1 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
- - 12.5 AITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
- - 13.8 A
Tjjunction temperature - - 125 °C
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
0.4 - 10 mAIGT gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
0.4 - 10 mA
ZO109MAO v; Tl = 110 xponenlia Fig. 12 Table 2. Plnnlng lnformatlon Table 3. Orderlng lnformatlon
WeEn Semiconductors Z0109MA0
4Q Triac
Z0109MA0 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 17 September 2018 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
0.4 - 10 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
0.4 - 10 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 10 mA
VTon-state voltage IT = 1 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
120 - - V/µs
dVcom/dt rate of change of
commutating voltage
VD = 400 V; Tj = 110 °C; dIcom/
dt = 0.44 A/ms; gate open circuit
2 - - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
123
TO-92 (SOT54)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
Z0109MA0 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
ZO109MAO Table 4. Lim g values In accordance with the Absolute Maximum Rating System (IEC 60134). full sin Fig.1 Fig. 2 Fig 3 full sine wave Fig.4 Fig 5
WeEn Semiconductors Z0109MA0
4Q Triac
Z0109MA0 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 17 September 2018 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state
voltage
- 600 V
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2;
Fig. 3
- 1 A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
- 12.5 AITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 13.8 A
I2t I2t for fusing tp = 10 ms; SIN - 0.78 A²s
- 50 A/µs
- 50 A/µs
-50 A/µs
dIT/dt rate of rise of on-state
current
IG = 20 mA; T2+ G+
-20 A/µs
IGM peak gate current - 1 A
PGM peak gate power - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 125 °C
003aac264
0
0
.
4
0
.
8
1
.
2
-50
0
5
0
1
0
0 1
5
0
T
l
e
a
d
(
°
C
)
I
T
(
R
M
S
)
(
A
)
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
0
3
a
a
f977
0
4
8
1
2
1
6
1
0
-2
1
0
-1
1
1
0
surge
d
u
r
a
t
i
o
n
(
s
)
I
T
(
R
M
S
)
(
A
)
f = 50 Hz; Tlead = 45 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
IG = 20 mA; T2+ G-
IG = 20 mA; T2- G-
IG = 20 mA; T2- G+
ZO109MAO wags/m ; i | .71/14.
WeEn Semiconductors Z0109MA0
4Q Triac
Z0109MA0 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 17 September 2018 4 / 13
003aac259
0
.
0
.
0
.
1
.
1
.
2
.
0
0
.
2
0
.
4
6
0
.
8
2
I
T
R
M
S
)
(
A
)
P
t
t
W
α
=
1
8
0
°
1
2
0
°
9
0
°
6
0
°
3
0
°
conduction
angle,
(degrees)
form
factor
a
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
α
α
α
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
003aaf449
8
4
12
16
ITSM
(A)
0
number of cycles
1 103
102
10
ITSM
t
IT
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
ZO109MAO Miasflgfl %
WeEn Semiconductors Z0109MA0
4Q Triac
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Product data sheet 17 September 2018 5 / 13
003aaf490
1
10
102
103
10- 5 10- 4 10- 3 10- 2 10- 1
tp(s)
ITSM
(A)
(2)
(1)
I
T
S
M
t
I
T
T
j(init)
=
2
5
°
C
m
a
x
t
p
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
ZO109MAO Table 5. Thermal characteristics
WeEn Semiconductors Z0109MA0
4Q Triac
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Product data sheet 17 September 2018 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-lead) thermal resistance
from junction to lead
full cycle; Fig. 6 - - 60 K/W
Rth(j-a) thermal resistance
from junction to
ambient free air
full cycle; printed circuit board mounted;
lead length 4 mm
- 150 - K/W
10-1
10-2
1
10
Zth(j-lead)
(K/W)
tp (s)
10-5 1 10
10-1
10-2
10-4 10-3
102003aac206
tp
P
t
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
ZO109MAO Table 6. Characteristics |T=o. Fig. 7 |T=o. Fig. 7 |T=o. Fig. 7 |T=o. Fig. 7 IG=0 Fig.8 IG=0 Fig.8 IG=0 Fig.8 IG=0 Fig.8 12 VD Fig. 11 60 Fig. 11 VD: v, n = 110 xponenlia Fig 12
WeEn Semiconductors Z0109MA0
4Q Triac
Z0109MA0 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 17 September 2018 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
0.4 - 10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
0.4 - 10 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
0.4 - 10 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
0.4 - 10 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
- - 15 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
- - 30 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
- - 15 mA
ILlatching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
- - 15 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 10 mA
VTon-state voltage IT = 1 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
- - 1 VVGT gate trigger voltage
VD = 600 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.2 - - V
IDoff-state current VD = 600 V; Tj = 125 °C - - 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
120 - - V/µs
dVcom/dt rate of change of
commutating voltage
VD = 400 V; Tj = 110 °C; dIcom/
dt = 0.44 A/ms; gate open circuit
2 - - V/µs
ZO109MAO 003355205 003335203 L \ \\ T: 003355200 003555259
WeEn Semiconductors Z0109MA0
4Q Triac
Z0109MA0 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 17 September 2018 8 / 13
Tj(°C)
-50 1501000 50
003aaa205
2
1
3
4
0
IGT(25°C)
IGT
(1)
(2)
(3)
(4)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Tj(°C)
-50 1501000 50
003aaa203
1
2
3
0
IL
IL(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
Tj(°C)
-50 1501000 50
003aaa204
1
2
3
0
IH(25°C)
IH
Fig. 9. Normalized holding current as a function of
junction temperature
003aac258
0
0.4
0.8
1.2
1.6
2
0 0.4 0.8 1.2 1.6 2
VT
(V)
IT
(A)
(1) (2) (3)
Vo = 1.13 V
Rs = 0.31 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
ZO109MAO flDSaas209 \ / M3saazfl6 , dVDm" CW“ dVD(25 “ C)’ 41‘
WeEn Semiconductors Z0109MA0
4Q Triac
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Product data sheet 17 September 2018 9 / 13
Tj (°C)
-50 1501000 50
003aaa209
0.8
0.4
1.2
1.6
0
VGT(25°C)
VGT
Fig. 11. Normalized gate trigger voltage as a function of
junction temperature
1.6
1.2
0.8
0.4
0
A
0 50 100 150
Tj(°C)
003aaa208
Fig. 12. Normalized critical rate of rise of off-state
voltage as a function of junction temperature; typical
values
ZO109MAO SOT54 PACKAGE OUTLINE HF P |—+ som sum LEADS ON CIRCLE wk pm , m Bulk pm 412 soTsA WIDE mm mm Ree. wacky m,- Ammo pack , «25 _‘ ‘- |¥§§Z# 5073‘ LEAD BEND U“ SOTSA LEAD BEND LUZ Bulk Pack , 417 Bulk Pack , 412 Remark Delaned dxmensxcns r9191 lo For) drawing
WeEn Semiconductors Z0109MA0
4Q Triac
Z0109MA0 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 17 September 2018 10 / 13
10. Package outline
Fig. 13. Package outline TO-92 (SOT54)
hem sIgn. ata sheaf Is axplalnsd In same 5 omevIeeIs) assumed In ml; 5 comma": was published all he Imam pmud status lmnr mg Mww ween-semi com ZO109MAO
WeEn Semiconductors Z0109MA0
4Q Triac
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Product data sheet 17 September 2018 11 / 13
11. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
no responsibility for the content in this document if provided by an information
source outside of WeEn Semiconductors.
In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
ZO109MAO
WeEn Semiconductors Z0109MA0
4Q Triac
Z0109MA0 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 17 September 2018 12 / 13
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
ZO109MAO
WeEn Semiconductors Z0109MA0
4Q Triac
Z0109MA0 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 17 September 2018 13 / 13
12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics.............................................................. 7
10. Package outline........................................................ 10
11. Legal information..................................................... 11
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 17 September 2018

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