BSP126 Datasheet by Nexperia USA Inc.

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Philips Semiconductors PHILIPS
DATA SHEET
Product specification
Supersedes data of 1997 Jun 23 2002 Feb 19
DISCRETE SEMICONDUCTORS
BSP126
N-channel enhancement mode
vertical D-MOS transistor
b
ook, halfpage
M3D087
HULI
2002 Feb 19 2
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
FEATURES
•Direct interface to C-MOS, TTL, etc.
•High-speed switching
•No secondary breakdown.
APPLICATIONS
•Line current interruptor in telephone sets
•Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a miniature SOT223 package.
MARKING
PINNING - SOT223
TYPE NUMBER MARKING CODE
BSP126 BSP126
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM054
4
123
Top view
s
d
g
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a 40 ×40 ×1.5 mm epoxy printed-circuit board; mounting pad for the drain tab minimum 6 cm2.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VDS drain-source voltage (DC) −250 V
IDdrain current (DC) −375 mA
Ptot total power dissipation Tamb ≤25 °C−1.5 W
RDSon drain-source on-state resistance ID= 300 mA; VGS = 10 V 2.8 5 Ω
VGSth gate-source threshold voltage ID= 1 mA; VDS =V
GS −2V
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC) −250 V
VGSO gate-source voltage (DC) open drain −±20 V
IDdrain current (DC) −375 mA
IDM peak drain current −1.3 A
Ptot total power dissipation Tamb ≤25 °C; note 1 −1.5 W
Tstg storage temperature −55 +150 °C
Tjjunction temperature −150 °C
2002 Feb 19 3
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
THERMAL CHARACTERISTICS
Note
1. Device mounted on a 40 ×40 ×1.5 mm epoxy printed-circuit board; mounting pad for the drain tab minimum 6 cm2.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient; note 1 83.3 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID=10µA; VGS = 0 250 −−V
I
GSS gate-source leakage current VGS =±20 V; VDS =0 −−±100 nA
VGSth gate-source threshold voltage ID= 1 mA; VDS =V
GS 0.8 −2V
R
DSon drain-source on-state resistance ID= 20 mA; VGS = 2.4 V −−7.5 Ω
ID= 300 mA; VGS =10V −2.8 5 Ω
IDSS drain-source leakage current VDS = 200 V; VGS =0 −−1µA
Y
fstransfer admittance ID= 300 mA; VDS = 25 V 200 600 −mS
Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz −100 120 pF
Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz −21 30 pF
Crss feedback capacitance VDS = 25 V; VGS = 0; f = 1 MHz −10 15 pF
Switching times (see Figs 2 and 3)
ton turn-on time ID= 250 mA; VDD =50V;
V
GS =0to10V
−610ns
t
off turn-off time ID= 250 mA; VDD =50V;
V
GS =10to0V
−47 60 ns
2002 Feb 19 4
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
Fig.2 Switching times test circuit.
handbook, halfpage
MBB691
50 Ω
VDD = 50 V
ID
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
ton toff
OUTPUT
INPUT
handbook, halfpage
0 50 100
Ptot
(W)
200
2
0
1.6
150
1.2
0.8
0.4
MBB693
Tamb (°C)
Fig.4 Power derating curve.
handbook, halfpage
02 10
V
DS (V)
1.2
0.4
0
0.8
4
(1)
(2)
(3)
(4)
(5)
(7)
6
ID
(A)
8
MGU569
(6)
Fig.5 Typical output characteristics.
Tj=25°C.
(1) VGS =10V.
(2) VGS =5V.
(3) VGS =4V.
(4) VGS = 3.5 V.
(5) VGS =3V.
(6) VGS = 2.5 V.
(7) VGS =2V.
2002 Feb 19 5
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
handbook, halfpage
02 10
V
GS (V)
1.6
1.2
0.4
0
0.8
1.4
0.6
0.2
1
46
I
D
(A)
8
MGU570
Fig.6 Typical transfer characteristics.
VDS = 10 V; Tj=25°C.
handbook, halfpage
20
10
5
0
15
MGU571
10−1110
I
D
(A)
RDSon
(Ω)
(1)
(2)
(3)
(4)
(5)
(6)
Fig.7 Drain-source on-state resistance as a
function of drain current; typical values.
Tj=25°C.
(1) VGS = 2.5 V.
(2) VGS =3V.
(3) VGS = 3.5 V.
(4) VGS =4V.
(5) VGS =5V.
(6) VGS =10V.
handbook, halfpage
250
010 30
020 VDS (V)
C
(pF)
50
100
150
200
MGU572
Ciss
Coss
Crss
Fig.8 Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
VGS = 0; f = 1 MHz; Tj=25°C.
m (21
2002 Feb 19 6
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
handbook, halfpage
−50 0 50
(1)
(2)
150
2
1.5
0.5
0
1
100
k
Tj (°C)
MGU573
Fig.9 Temperature coefficient of drain-source
on-state resistance; typical values.
kRDSon at Tj
RDSon at 25 °C
-----------------------------------------
=
Typical RDSon:
(1) ID= 250 mA; VGS =10V.
(2) ID= 20 mA; VGS = 2.4 V.
handbook, halfpage
−50 0 50 150
1.25
0
1
100
k
Tj (°C)
0.75
0.5
0.25
MGU574
Fig.10 Temperature coefficient of gate-source
threshold voltage; typical values.
kVGSth at Tj
VGSth at 25 °C
----------------------------------------
=
Typical VGSth at 1 mA.
El©
2002 Feb 19 7
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
2002 Feb 19 8
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Feb 19 9
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
NOTES
2002 Feb 19 10
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
NOTES
2002 Feb 19 11
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP126
NOTES
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© Koninklijke Philips Electronics N.V. 2002 SCA74
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Printed in The Netherlands 613510/03/pp12 Date of release: 2002 Feb 19 Document order number: 9397 750 09311