BCW60C215 Datasheet by Nexperia USA Inc.

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DATA SHEET
Product data sheet
Supersedes data of 1997 Mar 10
1999 Apr 22
DISCRETE SEMICONDUCTORS
BCW60 series
NPN general purpose transistors
db
ook, halfpage
M3D088
1999 Apr 22 2
NXP Semiconductors Product data sheet
NPN general purpose transistors BCW60 series
FEATURES
Low current (max. 100 mA)
Low voltage (max. 32 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW61 series.
MARKING
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
BCW60B AB
BCW60C AC
BCW60D AD
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 32 V
VCEO collector-emitter voltage open base 32 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 22 3
NXP Semiconductors Product data sheet
NPN general purpose transistors BCW60 series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 32 V − − 20 nA
IE = 0; VCB = 32 V; Tamb = 150 °C− − 20 μA
IEBO emitter cut-off current IC = 0; VEB = 4 V − − 20 nA
hFE DC current gain IC = 10 μA; VCE = 5 V
BCW60B 20 − −
BCW60C 40 − −
BCW60D 100 − −
DC current gain IC = 2 mA; VCE = 5 V
BCW60B 180 310
BCW60C 250 460
BCW60D 380 630
DC current gain IC = 50 mA; VCE = 1 V
BCW60B 70 − −
BCW60C 90 − −
BCW60D 100 − −
VCEsat collector-emitter saturation
voltage
IC = 10 mA; IB = 0.25 mA 50 350 mV
IC = 50 mA; IB = 1.25 mA 100 550 mV
VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.25 mA 600 850 mV
IC = 50 mA; IB = 1.25 mA 0.7 1.05 V
VBE base-emitter voltage IC = 10 μA; VCE = 5 V 520 mV
IC = 2 mA; VCE = 5 V 550 650 750 mV
IC = 50 mA; VCE = 1 V 780 mV
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 1.7 pF
Ceemitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 11 pF
fTtransition frequency IC = 10 mA; VCE = 5 V;
f = 100 MHz; note 1
100 250 MHz
Fnoise figure IC = 200 μA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
26dB
2mm W scam DIMENSIONS (mm are me original dlmenslnns) A1 UNIT A man bP c D E 2 e, HE LF 0 v w H 048 015 so 14 25 0A5 055 mm 09 0‘ 038 009 25 12 ‘9 095 21 015 045 02 0‘ OUTLINE HE NCES EUROPEAN VERS'O" IEC JEDEC EIAJ PROJECTION ISSUE DATE m soT23 707236145 E} @ 99709” 1999 Apr 22
1999 Apr 22 4
NXP Semiconductors Product data sheet
NPN general purpose transistors BCW60 series
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
1999 Apr 22 5
NXP Semiconductors Product data sheet
NPN general purpose transistors BCW60 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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General Information in this document is believed to be
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specifications and product descriptions, at any time and
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
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Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp6 Date of release: 1999 Apr 22 Document order number: 9397 750 05715