BSC0902NSI Datasheet by Infineon Technologies

”Var-eon, 04? fit? :{ROHS Table 1 Key Performance Parameters l_ll_ll_l WWI—‘7‘
1
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
1
2
3
4
5
6
7
8
4
32
1
56
78
SuperSO8
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFET
OptiMOSTMPower-MOSFET,30V
Features
•OptimizedSyncFETforhighperformancebuckconverter
•IntegratedmonolithicSchottky-likediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 30 V
RDS(on),max 2.8 mΩ
ID100 A
QOSS 17 nC
QG(0V..10V) 24 nC
Type/OrderingCode Package Marking RelatedLinks
BSC0902NSI PG-TDSON-8 0902NSI -
1) J-STD20 and JESD22
(imeon
2
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
(imeon Table 2 Maximum ratings Table 3 Thermal characteristics
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OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
-
-
-
-
100
65
89
56
23
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
Pulsed drain current2) ID,pulse - - 400 A TC=25°C
Avalanche current, single pulse3) IAS - - 50 A TC=25°C
Avalanche energy, single pulse EAS - - 30 mJ ID=40A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot -
-
-
-
48
2.5 WTC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
bottom RthJC - - 2.6 K/W -
Thermal resistance, junction - case,
top RthJC - - 20 K/W -
Device on PCB,
6 cm2 cooling area1) RthJA - - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
@ Table 4 Static characteristics Table 5 Dynamic characteristics Table 6 Gate char e characteristics ‘
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OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=10mA
Breakdown voltage temperature
coefficient dV(BR)DSS/dTj- 15 - mV/K ID=10mA,referencedto25°C
Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=10mA
Zero gate voltage drain current IDSS -
-
-
2
0.5
-mA VDS=24V,VGS=0V
VDS=24V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
3.0
2.3
3.7
2.8 mΩVGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance RG0.5 0.9 1.8 Ω-
Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=30A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1500 2000 pF VGS=0V,VDS=15V,f=1MHz
Output capacitance Coss - 630 840 pF VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance Crss - 88 - pF VGS=0V,VDS=15V,f=1MHz
Turn-on delay time td(on) - 3.9 - ns VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time tr- 5.4 - ns VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time td(off) - 20 - ns VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time tf- 3.8 - ns VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 4.0 - nC VDD=15V,ID=30A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 2.4 - nC VDD=15V,ID=30A,VGS=0to4.5V
Gate to drain charge Qgd - 4.0 - nC VDD=15V,ID=30A,VGS=0to4.5V
Switching charge Qsw - 5.6 - nC VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total Qg- 12.2 16.2 nC VDD=15V,ID=30A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.6 - V VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total Qg- 24 32 nC VDD=15V,ID=30A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 9.8 - nC VDS=0.1V,VGS=0to4.5V
Output charge Qoss - 17 23 nC VDD=15V,VGS=0V
1) See ″Gate charge waveforms″ for parameter definition
(imeon Table 7 Reverse diode
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OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 48 A TC=25°C
Diode pulse current IS,pulse - - 192 A TC=25°C
Diode forward voltage VSD - 0.54 0.7 V VGS=0V,IF=4A,Tj=25°C
Reverse recovery charge Qrr - 5 - nC VR=15V,IF=4A,diF/dt=400A/µs
(ifileon
6
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 40 80 120 160
0
10
20
30
40
50
60
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 40 80 120 160
0
20
40
60
80
100
120
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
(ifileon
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OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0123
0
100
200
300
400
5 V10 V 4.5 V
4 V
3.5 V
3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 10 20 30 40 50
0
1
2
3
4
5
6
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V 8 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
012345
0
80
160
240
320
400
150 °C
25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 40 80 120 160
0
40
80
120
160
200
240
gfs=f(ID);Tj=25°C
(ifileon
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OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0
1
2
3
4
5
typ
RDS(on)=f(Tj);ID=30A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
VGS(th)=f(Tj);VGS=VDS;ID=10mA
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 10 20 30
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10-1
100
101
102
103
-55 °C
25 °C
125 °C
150 °C
IF=f(VSD);parameter:Tj
(ifileon Vgsrm 0mm Q Om.
9
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
10-1
100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25 30
0
2
4
6
8
10
12
24 V
15 V
6 V
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
VDS[V]
IDSS[A]
0 5 10 15 20 25
10-7
10-6
10-5
10-4
10-3
10-2
125 °C
100 °C
75 °C
25 °C
IDSS=f(VDS);VGS=0V;parameter:Tj
Gate charge waveforms
MIN 1: go 031 (LUZ 0.15 5.15 4.55 3.10 5.55 5.711 3.40 IIILLIMETEKS MAX 1 m 0.54 0.22 0.35 5.49 5.35 4.40 5.35 5.10 3.30 DZ Infineon E2 DOCUMENT no. 2530000333: SCALE 0 EUROPEAN PROJEc‘noN 6% ISSUE DATE 10-04-2013 REVEION m
10
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
zuv; m K $e>fi>e>geree Fiv 9‘9 H mm— 21 swz ”95 m Emu» com = 725 17s ansxna V‘V EL swig ‘ Xvw E‘nu Dimension in mm (ifileon
11
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
Dimension in mm
Figure2OutlineTape(TDSON-8)
(imeon TDSON-8: Boardpads copper solder mask
12
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
Figure3OutlineFootprint(TDSON-8)
(imeon
13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Rev.2.3,2016-02-03Final Data Sheet
RevisionHistory
BSC0902NSI
Revision:2016-02-03,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.3 2016-02-03 Update Coss max
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.