EMX26 Datasheet by Rohm Semiconductor

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Epimia‘ planar Iype NPN sihcon Iransislor 1/3
EMX26
Transistors
1/3
General purpose transistors
(dual transistors)
EMX26
zFeatures
1) Two 2SD2654 chips in a EMT package.
2) Mounting possible with EMT3 automatic mounting
machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
ROHM : EMT6
EMX26
Abbreviated symbol : X26
Each lead has same dimensions
0.22
1.2
1.6
(1)
(2)(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
The following characteristics apply to both Tr1 and Tr2.
zEquivalent circuit
EMX26
(3) (2) (1)
(4) (6)(5)
Tr
2
Tr
1
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
1
Single pulse Pw=100ms.
2
120mW per element must not be exceeded.
Parameter Symbol Limits Unit
VCBO 60 V
50 V
V
VCEO
VEBO 12
A (Pulse) 0.2
ICA (DC)0.15
Tj 150 °C
Tstg 55 to +150 °C
Pd 150 (TOTAL) mW
1
2
can an 432 m m / g2; ///// cm m:
EMX26
Transistors
2/3
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
60
50
12
250
3.5
0.3
0.3
0.3
V
V
V
µA
µA
V
MHz
pF
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=50V
V
EB
=12V
I
C
/I
B
=50mA/5mA
V
CE
/I
C
=5V/1mA
h
FE
820 2700
V
CE
=5V, I
E
=−10mA, f=100MHz
V
CB
=5V, I
E
=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cutoff current
Collector cutoff current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current transfer ratio
Measured using pulse current.
zPackaging specifications
Package
Code
Taping
Basic ordering
unit (pieces)
T2R
8000
EMX26
Type
zElectrical characteristic curves
0
00.20.1 0.3 0.4
0.4
0.8
1.2
1.6
2.0
0.5
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics ( Ι )
COLLECTOR CURRENT : IC (mA)
Ta=25°C
2.0µA
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
I
B
=0
1.8µA
1.6µA
1.4µA
0841216
40
80
120
160
200
020
0 0.40.2
0.2
0.5
0.6 0.8 1.0
1
2
5
20
10
50
100
200
1.41.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
V
CE
=5V
Ta=100°C
25°C
25°C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
COLLECTOR CURRENT : I
C
(mA)
500µA
450µA
400µA
350µA
250µA
200µA
150µA
100µA
50µA
I
B
=0
Ta=25°C
Measured
using pulse current
300µA
0.2 1 2 50.5 10 20 50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current ( Ι )
DC CURRENT GAIN : h
FE
Ta=25°C
Measured
using pulse current
V
CE
=10V
5V
3V
0.2 1 2 50.5 10 20 50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
DC CURRENT GAIN : h
FE
V
CE
=5V
Measured
using pulse current
Ta=100°C
25°C
25°C
12 50.5 10 20 50 100
1000
1
2
5
10
20
50
100
200
500
0.2 200
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
Ta=25°C
I
C
/
I
B
=50
20
10
EMX26
Transistors
3/3
0.2 1 2 50.5 10 20 50 100
1000
1
2
5
10
20
50
100
200
500
200
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
I
C
/
I
B
=10
Ta=100°C
25°C
25°C
0.2 1 2 50.5 10 20 50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( Ι )
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
Ta=25°C
I
C
/I
B
=10
20
50
0.2 1 2 50.5 10 20 50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
I
C
/I
B
=10
Ta=
25°C
100°C
25°C
2510 20 50 100200 500
1000
1
2
5
10
20
50
100
200
500
11000
EMITTER CURRENT : IE (mA)
Fig.10 Gain bandwidth product
vs. emitter current
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
V
CE
=5V
Measured
using pulse current
0.2 0.5 1 2 5 10 20 50
1000
1
2
5
10
20
50
100
200
500
0.1 100
COLLRCTOR TO BASE VOLTAGE : V
CB
(V)
Fig.11 Collector output capacitance
vs. collector-base voltage
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
Ta=25°C
f=1MHz
I
E
=0A
0.02 0.05 0.1 0.2 0.5 1 2 5
100
0.1
0.2
0.5
1
2
5
10
20
50
0.01 10
I
B
(mA)
Fig.12 Output on resistance
vs. base current
Ron : ()
Ta=25°C
f=1kHz
V
i
=100mV(rms)
R
L
=1k
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

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