SQ4850EY Datasheet by Vishay Siliconix

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SQ4850EY
www.vishay.com Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15 1Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
100 % Rg and UIS tested
AEC-Q101 qualified
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) at VGS = 10 V 0.022
RDS(on) (Ω) at VGS = 4.5 V 0.031
ID (A) 12
Configuration Single
Package SO-8
Top View
SO-8 Single
1
S
2
S
3
S
1
2
S
3
S
4
G
D
7
D
6
D
5
D
8
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
12
A
TC = 125 °C 6.9
Continuous Source Current (Diode Conduction) IS6.2
Pulsed Drain Current aIDM 48
Single Pulse Avalanche Current L = 0.1 mH IAS 23
Single Pulse Avalanche Energy EAS 26 mJ
Maximum Power Dissipation aTC = 25 °C PD
6.8 W
TC = 125 °C 2.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount bRthJA 85 °C/W
Junction-to-Foot (Drain) RthJF 22
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SQ4850EY
www.vishay.com Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15 2Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 60 V - - 1.0
μA VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150
On-State Drain Current aID(on) V
GS = 10 V VDS 5 V 30 - - A
Drain-Source On-State Resistance aRDS(on)
VGS = 10 V ID = 6 A - 0.017 0.022
Ω
VGS = 10 V ID = 6 A, TJ = 125 °C - 0.029 0.037
VGS = 10 V ID = 6 A, TJ = 175 °C - 0.037 0.047
VGS = 4.5 V ID = 5 A - 0.025 0.031
Forward Transconductance bgfs VDS = 15 V, ID = 6 A - 21 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 1000 1250
pF Output Capacitance Coss - 185 235
Reverse Transfer Capacitance Crss -7595
Total Gate Charge cQg
VGS = 10 V VDS = 30 V, ID = 6 A
-2030
nC Gate-Source Charge cQgs -2.9-
Gate-Drain Charge cQgd -4.4-
Gate Resistance Rgf = 1 MHz 0.3 - 2.1 Ω
Turn-On Delay Time ctd(on)
VDD = 30 V, RL = 30 Ω
ID 1 A, VGEN = 10 V, Rg = 1 Ω
-711
ns
Rise Time ctr -914
Turn-Off Delay Time ctd(off) -2335
Fall Time ctf -914
Source-Drain Diode Ratings and Characteristics b
Pulsed Current aISM --48A
Forward Voltage VSD IF = 1.7 A, VGS = 0 - 0.8 1.2 V
f \\ / F an 40 vBS =3ov 20 aulamoslecnsugpanalwshaymm www.v\shay.com/doc?91000
SQ4850EY
www.vishay.com Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15 3Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
8
16
24
32
40
0246810
VGS =10Vthru5V
VGS =4V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)
ID
VGS =3V
VGS =2V
0
10
20
30
40
50
0 5 10 15 20 25
TC= 125 °C
TC= -55 °C
TC= 25 °C
- Transconductance (S)
g
fs
- Drain Current (A)ID
C
rss
0
500
1000
1500
0 102030405060
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.00
0.02
0.04
0.06
0.08
0.10
0 8 16 24 32 40
VGS =10V
VGS =4.5V
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
0
2
4
6
8
10
0 5 10 15 20
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
ID=6A
VDS =30V
// automostecnsugpanalwshaymm www.v\shay,com/doc?91000
SQ4850EY
www.vishay.com Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15 4Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
-50 -25 0 25 50 75 100 125 150 175
0.9
1.3
1.7
2.1
2.5
I
D
=6A
V
GS
=10V
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.00
0.03
0.06
0.09
0.12
0.15
012345678910
T
J
= 125 °C
T
J
=25 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
TJ= 25 °C
TJ= 150 °C
VSD - Source-to-Drain Voltage (V)
- Source Current (A)
IS
-1.2
-0.9
-0.6
-0.3
0
0.3
0.6
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
-50 -25 0 25 50 75 100 125 150 175
60
63
66
69
72
75
I
D
=1mA
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
-50 -25 0 25 50 75 100 125 150 175
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SQ4850EY
www.vishay.com Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15 5Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.01 0.1 1 10010
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
ID - Drain Current (A)
BVDSS Limited
IDM Limited
TC = 25 °C
Single Pulse
Limited by RDS(on)*
1 ms
10 ms
1 s
100 ms
100 μs
10 s, DC
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA = 85 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
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SQ4850EY
www.vishay.com Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15 6Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68878.
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
Single Pulse
0.02
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SQ4850EY
www.vishay.com Vishay Siliconix
S15-1878-Rev. F, 17-Aug-15 7Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. As of April 2014
REVISION HISTORY a
REVISION DATE DESCRIPTION OF CHANGE
F 04-Aug-15 Revised Rg minimum limit
— VISHAYm V HRH |-——-|
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 5 (A 359} n 246 (a 248) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) VISHAY» Docmem Number 72606 Re w 2‘ rJaurOB
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 01-Jan-2021 1Document Number: 91000
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