IRF530S, SiHF530S Datasheet by Vishay Siliconix

— VISHAY. V ® RoHS* D J a DJ "3:22" ‘ J www.vi5hay.com/doc?99912 hvm@wshay.com www.v\shay,com/doc?91000
IRF530S, SiHF530S
www.vishay.com Vishay Siliconix
S20-0683-Rev. D, 07-Sep-2020 1Document Number: 91020
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Surface-mount
Available in tape and reel
Dynamic dv/dt rating
Repetitive avalanche rated
175 °C operating temperature
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface-mount application.
Note
a. See device orientation
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 528 μH, Rg = 25 , IAS = 14 A (see fig. 12)
c. ISD 14 A, di/dt 140 A/μs, VDD VDS, TJ 175 °C
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)
PRODUCT SUMMARY
VDS (V) 100
RDS(on) ()V
GS = 10 V 0.16
Qg max. (nC) 26
Qgs (nC) 5.5
Qgd (nC) 11
Configuration Single
N-Channel MOSFET
G
D
S
GD
S
D
2
PAK (TO-263)
Available
Available
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and halogen-free SiHF530S-GE3 SiHF530STRL-GE3 a SiHF530STRR-GE3 a
Lead (Pb)-free IRF530SPbF IRF530STRLPbF a IRF530STRRPbF a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V
Gate-source voltage VGS ± 20
Continuous drain current VGS at 10 V TC = 25 °C ID
14
A
TC = 100 °C 10
Pulsed drain current a IDM 56
Linear derating factor 0.59 W/°C
Linear derating factor (PCB mount) e 0.025
Single pulse avalanche energy bEAS 69 mJ
Avalanche current aIAR 14 A
Repetitive avalanche energy aEAR 8.8 mJ
Maximum power dissipation TC = 25 °C PD
88 W
Maximum power dissipation (PCB mount) e TA = 25 °C 3.7
Peak diode recovery dv/dt cdv/dt 5.5 V/ns
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) dfor 10 s 300
VISHAY. hvm@wshay.com www.v\shay,com/doc?91000
IRF530S, SiHF530S
www.vishay.com Vishay Siliconix
S20-0683-Rev. D, 07-Sep-2020 2Document Number: 91020
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width 300 μs; duty cycle 2 %
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA -62
°C/W
Maximum junction-to-ambient
(PCB mount) aRthJA -40
Maximum junction-to-case (drain) RthJC -1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 100 - - V
VDS temperature coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-source leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 100 V, VGS = 0 V - - 25 μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-source on-state resistance RDS(on) V
GS = 10 V ID = 8.4 A b - - 0.16
Forward transconductance gfs VDS = 50 V, ID = 8.4 A b5.1 - - S
Dynamic
Input capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 670 -
pFOutput capacitance Coss - 250 -
Reverse transfer capacitance Crss -60-
Total gate charge Qg
VGS = 10 V ID = 14 A, VDS = 80 V,
see fig. 6 and 13 b
--26
nC Gate-source charge Qgs --5.5
Gate-drain charge Qgd --11
Turn-on delay time td(on)
VDD = 50 V, ID = 14 A,
Rg = 12 , RD = 3.6 , see fig. 10 b
-10-
ns
Rise time tr -34-
Turn-off delay time td(off) -23-
Fall time tf -24-
Gate input resistance Rgf = 1 MHz, open drain 1.0 - 4.7
Internal drain inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal source inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--14
A
Pulsed diode forward current a ISM --56
Body diode voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 V b --2.5V
Body diode reverse recovery time trr TJ = 25 °C, IF = 14 A, di/dt = 100 A/μs b - 150 280 ns
Body diode reverse recovery charge Qrr -0.851.7μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
VISHAY. hvm@wshay.com www.v\shay,com/doc?91000
IRF530S, SiHF530S
www.vishay.com Vishay Siliconix
S20-0683-Rev. D, 07-Sep-2020 3Document Number: 91020
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91020_01
20 µs Pulse Width
TC = 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
101
100
10-1 100101
V
DS,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
4.5 V
20 µs Pulse Width
TC = 175 °C
91020_02
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
101
100
10-1 100101
20 µs Pulse Width
VDS = 50 V
I
D
, Drain Current (A)
V
GS,
Gate-to-Source Voltage (V)
5678910
4
25 °C
175 °C
91020_03
101
100
I
D
= 14 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60- 40 - 20 0 20 40 60 80 100120 140 160
T
J,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91020_04
3.5
180
1400
1200
1000
800
0
400
600
100101
Capacitance (pF)
VDS, Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
91020_05
200
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0525
2015
10
I
D
= 14 A
V
DS
= 20 V
V
DS
= 50 V
For test circuit
see figure 13
V
DS
= 80 V
91020_06
VISHAY. hvm@wshay.com www.v\shay,com/doc?91000
IRF530S, SiHF530S
www.vishay.com Vishay Siliconix
S20-0683-Rev. D, 07-Sep-2020 4Document Number: 91020
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
101
100
VSD, Source-to-Drain Voltage (V)
ISD, Reverse Drain Current (A)
0.4 2.0
1.61.20.8
25 °C
175 °C
V
GS
= 0 V
91020_07
102
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
TC = 25 °C
TJ = 175 °C
Single Pulse
0.1
103
0.1
2
5
1
2
5
10
2
5
2
5
25
125
10 25
10225
103
91020_08
ID, Drain Current (A)
TC, Case Temperature (°C)
0
6
8
10
12
14
25 1501251007550
91020_09
4
2
175
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
10
1
0.1
10-2
10-5 10-4 10-3 10-2 0.1 1 10
PDM
t1
t2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
0 - 0.5
0.2
0.1
0.05
0.02
0.01
91020_11
— VISHAY. hvm@wshay.com www.v\shay.com/doc?91000
IRF530S, SiHF530S
www.vishay.com Vishay Siliconix
S20-0683-Rev. D, 07-Sep-2020 5Document Number: 91020
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Rg
IAS
0.01 Ω
tp
D.U.T
L
VDS
+
-VDD
10 V
Vary tp to obtain
required IAS
I
AS
V
DS
V
DD
V
DS
t
p
200
0
40
80
120
160
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
ID
5.7 A
9.9 A
14 A
VDD = 25 V
91020_12c
175
QGS QGD
QG
V
G
Charge
VGS
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
VISHAY. R. if ® {gag m T@T H. C3) wwwwshay cam/ggg’91020 hvm@wshay.com www.v\shay.com/doc?91000
IRF530S, SiHF530S
www.vishay.com Vishay Siliconix
S20-0683-Rev. D, 07-Sep-2020 6Document Number: 91020
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91020.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D.U.T. Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
‘IIIII' VISHAY.. fl 1—‘. teeeeeeeeeeeeeeeeeef : Delall‘” \ /. U 4.7 +&. V IA T 4A 3 l L 4 El lj SewanE~EandC~C 4 Notes 1. DlmenSlonlng and lolerancmg per ASME V14.5M71994 2. Dlmenslons are shown m rnllllmelers (unenes), a. Dlmensmn D and E as nol Include mald llash. Mold llasn sna outmosl extremes ol lne plasllc body al datum A. .Tnennal PAD contour opllonal wlmln almenslon E, LL [)1 a . Dlmenslon m and CI apply la base melal only. . Dalum A and a m be aelermlnea at damm plane H. . omllne conmrms lo JEDEC oufllne m TorzsaAB. \Ammb Documenl Number, 91364 Revlsmrl. TSVSepVOE
Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
5
4
13
L1
L2
D
BB
E
H
B
A
Detail A
A
A
c
c2
A
2 x e
2 x b2
2 x b
0.010 A B
MM ± 0.004 B
M
Base
metal
Plating b1, b3
(b, b2)
c1
(c)
Section B - B and C - C
Scale: none
Lead tip
4
34
(Datum A)
2CC
BB
5
5
View A - A
E1
D1
E
4
4
B
H
Seating plane
Gauge
plane
0° to 8°
Detail “A”
Rotated 90° CW
scale 8:1
L3 A1
L4
L
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
_ VISHAYQ o 420 {mass} n 635 He ‘29) 0135 (a 429) o 200 (5 080) Recommended Mwmum Pads Dmensmns m Inchesxmm) Dncumem Number “Amos 73397
AN826
Vishay Siliconix
Document Number: 73397
11-Apr-05
www.vishay.com
1
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.635
(16.129)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.420
(10.668)
0.355
(9.017)
0.145
(3.683)
0.135
(3.429)
0.200
(5.080)
0.050
(1.257)
Return to Index
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED