PSMN2R2-40PS Datasheet by Nexperia USA Inc.

Datasheet Feedback/Errors

F93 F9 1 Fig. 2 [11 Fig. 12 Fig. 14 Fig. 1 nexpeﬂa

PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

22 February 2013 Product data sheet

1. General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

2. Features and benefits

•High efficiency due to low switching and conduction losses

•Suitable for standard level gate drive sources

3. Applications

•DC-to-DC convertors

•Load switching

•Motor control

•Server power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V

IDdrain current Tmb = 25 °C; VGS = 10 V; Fig. 3; Fig. 1 - - 100 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 306 W

Static characteristics

RDSon drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 12

[1] - 1.75 2.1 mΩ

Dynamic characteristics

QGD gate-drain charge VGS = 10 V; ID = 80 A; VDS = 20 V;

Fig. 14; Fig. 15

- 25 - nC

[1] Measured 3 mm from package.

PSMN2R2-40PS man s nuntm-avznw unmumm

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 2 / 13

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain

3 S source

mb D drain

1 2

TO-220AB (SOT78)

mbb076

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PSMN2R2-40PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

7. Marking

Table 4. Marking codes

Type number Marking code

PSMN2R2-40PS PSMN2R2-40PS

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V

VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 40 V

VGS gate-source voltage -20 20 V

VGS = 10 V; Tmb = 100 °C; Fig. 1 - 100 AIDdrain current

VGS = 10 V; Tmb = 25 °C; Fig. 3; Fig. 1 - 100 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1122 A

PSMN2R2-40PS V552 10V ousmsgs mm mb Pm: : 7 X 100 % 4"” ProIQS'C) a "up.“ av mu m um yrs-Md

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 3 / 13

Symbol Parameter Conditions Min Max Unit

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 306 W

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Source-drain diode

ISsource current Tmb = 25 °C - 100 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1122 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;

Vsup ≤ 40 V; unclamped; RGS = 50 Ω

- 1.24 J

003aak896

0 50 100 150 200

100

150

200

250

300

Tj (°C)

(A)(A)

(1)(1)

(1) Capped at 100 A due to package

Fig. 1. Continuous drain current as a function of

mounting base temperature

Tmb (°C)

0 20015050 100

03aa16

120

Pder

(%)

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature

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Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 4 / 13

(

)

(

)

(

)

tp = 10 µs

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance

from junction to

mounting base

Fig. 4 - 0.25 0.5 K/W

003aad100

10-4

10-3

10-2

10-1

10-6 10-5 10-4 10-3 10-2 10-1 1 10

tp(s)

Zth (j-mb)

(K/W)

single shot

0.02

0.05

0.1

0.2

δ= 0.5

δ =

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN2R2-40PS Fl .10 Fig. 10 Fig. 11 Fig. 10 Fig. 12 Fig. 13 Fig. 12 Fig. 13 [11 Fig. 12 Hg. 14 Flg 15 Fig. 14 Fig. 15 .anmn "mum.”

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 5 / 13

10. Characteristics

Table 7. Characteristics

Tested to JEDEC standards where applicable.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - VV(BR)DSS drain-source

breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 10

- - 4.6 V

ID = 1 mA; VDS = VGS; Tj = 175 °C;

Fig. 10

1 - - V

VGS(th) gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 11; Fig. 10

234V

VDS = 40 V; VGS = 0 V; Tj = 25 °C - - 10 µAIDSS drain leakage current

VDS = 40 V; VGS = 0 V; Tj = 125 °C - - 200 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = 10 V; ID = 25 A; Tj = 100 °C;

Fig. 12; Fig. 13

- 2.4 2.85 mΩ

VGS = 10 V; ID = 25 A; Tj = 175 °C;

Fig. 12; Fig. 13

- 3.25 3.9 mΩ

RDSon drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 12

[1] - 1.75 2.1 mΩ

RGinternal gate

resistance (AC)

f = 1 MHz - 1 - Ω

Dynamic characteristics

ID = 0 A; VDS = 0 V; VGS = 10 V - 110 - nCQG(tot) total gate charge

- 130 - nC

QGS gate-source charge - 42 - nC

QGS(th) pre-threshold gate-

source charge

- 24 - nC

QGS(th-pl) post-threshold gate-

source charge

- 18 - nC

QGD gate-drain charge

ID = 80 A; VDS = 20 V; VGS = 10 V;

Fig. 14; Fig. 15

- 25 - nC

VGS(pl) gate-source plateau

voltage

ID = 80 A; VDS = 20 V; Fig. 14; Fig. 15 - 4.95 - V

Ciss input capacitance - 8423 - pF

Coss output capacitance

VDS = 20 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; Fig. 16 - 1671 - pF

PSMN2R2-40PS 0035mm 0013mm I, :2s°c VD5>ID xRDW a "up.“ av mu m um: mama

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 6 / 13

Symbol Parameter Conditions Min Typ Max Unit

Crss reverse transfer

capacitance

- 814 - pF

td(on) turn-on delay time - 33.2 - ns

trrise time - 40.4 - ns

td(off) turn-off delay time - 66.6 - ns

tffall time

VDS = 20 V; RL = 0.25 Ω; VGS = 10 V;

RG(ext) = 1.5 Ω

- 25.2 - ns

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V

trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 20 V

- 53.7 - ns

Qrrecovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 20 V; Tj = 25 °C

- 80.75 - nC

[1] Measured 3 mm from package.

003aad116

100

150

200

250

300

0 1 2 3 4

VDS (V)

(A)

5.5VGS (V) =

4.5

Fig. 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

003aad118

100

150

200

250

0 1.5 3 4.5 6

VGS (V)

(A)

25 °C175 °C

Fig. 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

PSMN2R2-40PS 0Maad122 902554123 VDS:0V;f:1MHz T,:25°C‘;VDS:25V 00353::124 003mm 3:25 "c; 10:25A 13:1mA; VDS:VGS .leplnaEV zen NM h'ivesqrwﬂ

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 7 / 13

003aad122

2000

4000

6000

8000

10000

12000

10-1 1 10

VGS (V)

(pf)

Ciss

Crss

Fig. 7. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

003aad123

100

150

200

250

0 50 100 150 200

ID(A)

gfs

(S)

Fig. 8. Forward transconductance as a function of

drain current; typical values

003aad124

0 5 10 15 20

VGS (V)

RDS(on)

(mΩ)

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Tj(°C)

- 60 1801200 60

003aad280

VGS(th)

(V)

max

typ

min

Fig. 10. Gate-source threshold voltage as a function of

junction temperature

PSMN2R2-40PS 035535 coma n 7 T,:25°C;VDS:SV I,:25°C 933327 092555523 Romy: a : 7 Rosms-c; .mpmav 200 NM h'ivesqrwﬂ

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 8 / 13

03aa35

VGS (V)

0 642

10- 4

10- 5

10- 2

10- 3

10- 1

(A)

10- 6

min typ max

Fig. 11. Sub-threshold drain current as a function of

gate-source voltage

003aad117

0 50 100 150 200 250 300

ID(A)

RDSon

(mΩ)

VGS (V) =

5.5

Fig. 12. Drain-source on-state resistance as a function

of drain current; typical values

03aa27

0.5

1.5

- 60 0 60 120 180

Tj(°C)

Fig. 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

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Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 9 / 13

003aad120

0 50 100 150

QG(nC)

VGS

(V)

VDS = 20V

VDS = 10 V

Fig. 15. Gate-source voltage as a function of gate

charge; typical values

003aad121

4000

8000

12000

10-1 1 10 102

VDS (V)

(pF)

Ciss

Crss

Coss

Fig. 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aad119

100

0 0.2 0.4 0.6 0.8 1

Vsd (V)

(A)

Tj= 175 °C25 °C

Fig. 17. Source current as a function of source-drain voltage; typical values

PSMN2R2-40PS Plastic single—ended package; healsink mounted: 1 mounting hole: (Head TO-ZZDAB SOT78 :leplnaEV my Mum: 15mg

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 10 / 13

11. Package outline

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

1 2 3

L1(1)

b1(2)

(3×)

b2(2)

(2×)

e e

b(3×)

L2(1)

mounting

base

Fig. 18. Package outline TO-220AB (SOT78)

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Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 11 / 13

12. Legal information

12.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an information

source outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

applications and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the Nexperia product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

PSMN2R2-40PS nurw-mavznw "mum"...

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 12 / 13

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor

tested in accordance with automotive testing or application requirements.

Nexperia accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’s warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

PSMN2R2-40PS n m... av mm mm mm

Nexperia PSMN2R2-40PS

N-channel 40 V 2.1 mΩ standard level MOSFET

PSMN2R2-40PS All information provided in this document is subject to legal disclaimers.

Product data sheet 22 February 2013 13 / 13

13. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................2

9 Thermal characteristics .........................................4

10 Characteristics ....................................................... 5

11 Package outline ................................................... 10

12 Legal information .................................................11

12.1 Data sheet status ............................................... 11

12.2 Definitions ...........................................................11

12.3 Disclaimers .........................................................11

12.4 Trademarks ........................................................ 12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

22 February 2013

PSMN2R2-40PS Datasheet by Nexperia USA Inc.

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