BSV236SP Datasheet by Infineon Technologies

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2001-12-21
Page 1
Preliminary data BSV 236SP
OptiMOS
-P Small-Signal-Transistor Product Summary
VDS -20 V
RDS
(
on
)
175 mΩ
ID-1.5 A
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
SOT-363
VPS05604
6
3
1
54
2
Gate
pin 3
Drain
pin 1,2,
Source
pin 4
5,6
Marking
X2s
Type Package Ordering Code
BSV 236SP SOT-363 Q67042-S4070
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
-1.5
-1.2
A
Pulsed drain current
TA=25°C
ID puls -6
Avalanche energy, single pulse
ID=-1.5 A , VDD=-10V, RGS=25Ω
EAS 9.5 mJ
Reverse diode dv/dt
IS=-1.5A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
dv/dt-6 kV/µs
Gate source voltage VGS ±12 V
Power dissipation
TA=25°C
Ptot 0.56 W
Operating and storage temperature T
j
, Tst
g
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
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2001-12-21
Page 2
Preliminary data BSV 236SP
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 90 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
220
110
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
V(BR)DSS -20 - - V
Gate threshold voltage, VGS = VDS
ID=-8µA
VGS(th) -0.6 -0.9 -1.2
Zero gate voltage drain current
VDS=-20V, VGS=0, Tj=25°C
VDS=-20V, VGS=0, Tj=150°C
IDSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
VGS=-12V, VDS=0
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-2.5V, ID=-0.8A
RDS(on) - 193 285 mΩ
Drain-source on-state resistance
VGS=-4.5, ID=-1.5A
RDS(on) - 131 175
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t ≤10 sec.
C(— Inflneon fiechno‘ogwe: (plateau
2001-12-21
Page 3
Preliminary data BSV 236SP
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs çVDSç≥2*çIDç*RDS(on)max
ID=-1.2A
2.2 4.4 - S
Input capacitance Ciss VGS=0, VDS=-15V,
f=1MHz
- 228 - pF
Output capacitance Coss - 92 -
Reverse transfer capacitance Crss - 75 -
Turn-on delay time td
(
on
)
VDD=-10V, VGS=-4.5V,
ID=-1A, RG=6Ω
- 5.7 8.5 ns
Rise time tr- 8.5 12.7
Turn-off delay time td
(
off
)
- 14.1 21.1
Fall time tf- 12.2 18.3
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=-10V, ID=-1.5A - -0.4 -0.6 nC
Gate to drain charge Q
d- -1.8 -2.7
Gate charge total QgVDD=-10V, ID=-1.5A,
VGS=0 to -4.5V
- -3.8 -5.7
Gate plateau voltage V
(p
lateau
)
VDD=-10V, ID=-1.5A - -1.6 - V
Reverse Diode
Inverse diode continuous
forward current
ISTA=25°C - - -0.11 A
Inverse diode direct current,
pulsed
ISM - - -6
Inverse diode forward voltage VSD VGS=0, |IF| = |ID|- 0.88 1.3 V
Reverse recovery time trr VR=-10V, |IF| = |lD|,
diF/dt=100A/µs
- 16.4 20.5 ns
Reverse recovery charge Qrr - 3.4 4.3 nC
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2001-12-21
Page 4
Preliminary data BSV 236SP
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
W
1.3 BSV 236SP
Ptot
2 Drain current
ID = f (TA)
parameter: |VGS|≥ 4.5 V
0 20 40 60 80 100 120 °C 160
TA
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
A
-1.6 BSV 236SP
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 -1 -10 0 -10 1 -10 2
V
VDS
-2
-10
-1
-10
0
-10
1
-10
A
BSV 236SP
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
tp = 45.0µs
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSV 236SP
ZthJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Infiqeon memo o m; 0’
2001-12-21
Page 5
Preliminary data BSV 236SP
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
012345678V10
- VDS
0
2
4
6
8
A
12
- ID
Vgs = -1.8V
Vgs = -2V
Vgs = -2.4V
Vgs = -2.6V
Vgs = -3V
Vgs = -3.4V
Vgs = -3.8V
Vgs = -4.5V
Vgs = -6V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 2 4 6 8 A 11
- ID
0
0.1
0.2
0.3
Ω
0.5
RDS(on)
Vgs = -2V
Vgs = - 2.4V
Vgs= - 2.6V
Vgs = - 3V
Vgs= - 3.4V
Vgs = - 3.8V
Vgs = - 4.5V
Vgs= - 5V
Vgs = - 6V
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 V2.5
- VGS
0
0.5
1
1.5
2
2.5
3
3.5
4
A
5
- ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4 A 5
- ID
0
1
2
3
4
5
6
S
8
gfs
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2001-12-21
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Preliminary data BSV 236SP
9 Drain-source on-resistance
RDS(on) = f(Tj)
parameter: ID = -1.5 A, VGS = -4.5 V
-60 -20 20 60 100 °C 160
Tj
80
100
120
140
160
180
200
mΩ
240
RDS(on)
typ.
98%
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = -8 µA
-60 -20 20 60 100 °C 160
Tj
0.2
0.4
0.6
0.8
1
V
1.4
- VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz
0 5 10 V20
- VDS
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-2
-10
-1
-10
0
-10
1
-10
A
BSV 236SP
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
Infiqeon #echno 09 e: 0’
2001-12-21
Page 7
Preliminary data BSV 236SP
13 Typ. avalanche energy
EAS = f (Tj), par.: ID = -1.5 A
VDD = -10 V, RGS = 25 Ω
25 50 75 100 °C 150
Tj
0
1
2
3
4
5
6
7
8
mJ
10
EAS
14 Typ. gate charge
|VGS| = f (QGate)
parameter: ID = -1.5 A pulsed
0123456 nC 8
|QGate|
0
1
2
3
4
5
6
7
8
9
10
V
12
- VGS
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
-18
-18.5
-19
-19.5
-20
-20.5
-21
-21.5
-22
-22.5
-23
-23.5
V
-24.5 BSV 236SP
V(BR)DSS
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2001-12-21
Page 8
Preliminary data BSV 236SP
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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