BSP149 Datasheet by Infineon Technologies

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BSP149
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv/dt rated
• Available with VGS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Maximum ratings
at
T
=25
°
C unless otherwise specified
VDS 200 V
RDS(on),max 3.5 Ω
IDSS,min 0.14 A
Product Summary
PG-SOT223
Type Package Tape and Reel Information Marking Packaging
BSP149 PG-SOT223 H6327: 1000 pcs/reel BSP149 Non dry
BSP149 PG-SOT223 H6906: 1000 pcs/reel BSP149 Non dry
Type Package Tape and Reel Information Marking Packaging
BSP149 PG-SOT223 H6327: 1000 pcs/reel BSP149 Non dry
BSP149 PG-SOT223 H6906: 1000 pcs/reel
sorted in VGS(th) bands1)
BSP149 Non dry
Rev. 2.1 page 1 2012-11-28
M
ax
i
mum ra
ti
ngs, a
t
T
j=
25
°C
, un
l
ess o
th
erw
i
se spec
ifi
e
d
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.66 A
TA=70 °C 0.53
Pulsed drain current ID,pulse TA=25 °C 2.6
Reverse diode dv/dtdv/dt
ID=0.66 A,
VDS=160 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD Class
(JESD22-A114-HBM) 1B (>500,<600)
Power dissipation Ptot TA=25 °C 1.8 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1) see table on next page and diagram 11
Value
Rev. 2.1 page 1 2012-11-28
@neon es
BSP149
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4) RthJS - - 25 K/W
SMD version, device on PCB RthJA minimal footprint - - 115
6 cm2 cooling area1) --70
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=-3 V, ID=250 µA 200 - - V
Gate threshold voltage VGS(th) VDS=3 V, ID=400 µA -2.1 -1.4 -1
Drain-source cutoff current ID(off)
VDS=200 V,
VGS=-3 V, Tj=25 °C - - 0.1 µA
VDS=200 V,
VGS=-3 V, Tj=125 °C --5
Values
Rev. 2.1 page 2 2012-11-28
j
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 10 nA
On-state drain current IDSS VGS=0 V, VDS=10 V 140 - - mA
Drain-source on-state resistance RDS(on) VGS=0 V, ID=70 mA - 1.7 3.5 Ω
VGS=10 V, ID=660 mA - 1.0 1.8
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.48 A 0.4 0.8 - S
Threshold voltage VGS(th) sorted in bands3)
J VGS(th) VDS=3 V, ID=400 µA -1.2 - -1 V
K -1.35 - -1.15
L -1.5 - -1.3
M -1.65 - -1.45
N -1.8 - -1.6
drain connection. PCB is vertical in still air.
3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
2) Device on 40 mm x 40 mm x 1.5 mm e
p
ox
y
PCB FR4 with 6 cm2
(
sin
g
le la
y
er, 70
µ
m thick
)
co
pp
er area for
Rev. 2.1 page 2 2012-11-28
@neon
BSP149
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss - 326 430 pF
Output capacitance Coss -4155
Reverse transfer capacitance Crss -1725
Turn-on delay time td(on) - 5.1 7.7 ns
Rise time tr- 3.4 5.1
Turn-off delay time td(off) -4568
Fall time tf-2131
Gate Charge Characteristics
Gate to source charge Qgs - 0.74 1.0 nC
Gate to drain charge Qgd - 5.6 8.4
Gate charge total Qg-1114
Gate plateau voltage Vplateau - 0.16 - V
Values
VGS=-3 V, VDS=25 V,
f=1 MHz
VDD=100 V,
VGS=-2…7 V,
ID=0.50 A, RG=6 Ω
VDD=160 V,
ID=0.05 A,
VGS=-3 to 5 V
Rev. 2.1 page 3 2012-11-28
Reverse Diode
Diode continous forward current IS- - 0.66 A
Diode pulse current IS,pulse - - 2.6
Diode forward voltage VSD
VGS=-3 V, IF=0.66 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time trr -4265ns
Reverse recovery charge Qrr -6090nC
VR=100 V, IF=0.5 A,
diF/dt=100 A/µs
TA=25 °C
Rev. 2.1 page 3 2012-11-28
@neon , / // \ \ \
BSP149
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS10 V
0
0.5
1
1.5
2
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 40 80 120 160
ID[A]
TA[°C]
Rev. 2.1 page 4 2012-11-28
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
100101102103
10-3
10-2
10-1
100
101
ID[A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-4 10-3 10-2 10-1 100101102
100
101
102
ZthJA [K/W]
tp[s]
0
0.5
1
1.5
2
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 40 80 120 160
ID[A]
TA[°C]
Rev. 2.1 page 4 2012-11-28
@neon , E J;
BSP149
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V 0.5 V
1 V
10 V
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
RDS(on) [Ω]
ID[A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V10 V
0
0.2
0.4
0.6
0.8
1
0246810
ID[A]
VDS [V]
Rev. 2.1 page 5 2012-11-28
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V 0.5 V
1 V
10 V
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
RDS(on) [Ω]
ID[A]
0
0.4
0.8
1.2
1.6
2
-2-10123
ID[A]
VGS [V]
0
0.2
0.4
0.6
0.8
1
1.2
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70
gfs [S]
ID[A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V10 V
0
0.2
0.4
0.6
0.8
1
0246810
ID[A]
VDS [V]
Rev. 2.1 page 5 2012-11-28
S // k __ _//_/__.
BSP149
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.07 A; VGS=0 V VGS(th)=f(Tj); VDS=3 V; ID=400 µA
parameter: ID
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140 180
RDS(on) [Ω]
Tj[°C]
typ
98 %
2 %
-3
-2.5
-2
-1.5
-1
-0.5
0
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Rev. 2.1 page 6 2012-11-28
11 Threshold voltage bands 12 Typ. capacitances
ID=f(VGS); VDS=3 V; Tj=25 °C C=f(VDS); VGS=-3 V; f=1 MHz
400 µA
JK
L
M
N
0.01
0.1
1
10
-2 -1.5 -1 -0.5
ID[mA]
VGS [V]
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140 180
RDS(on) [Ω]
Tj[°C]
typ
98 %
2 %
-3
-2.5
-2
-1.5
-1
-0.5
0
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
10
100
1000
0 102030
C[pF]
VDS [V]
Rev. 2.1 page 6 2012-11-28
@eon WI‘II \\
BSP149
13 Forward characteristics of reverse diode 15 Typ. gate charge
IF=f(VSD)VGS=f(Qgate); ID=0.5 A pulsed
parameter: Tjparameter: VDD
0.2 VDS(max)
0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
024681012
VGS [V]
Qgate [nC]
25 °C150 °C
25 °C, 98%
0.12 A
0.01
0.1
1
10
00.511.52
IF[A]
VSD [V]
150 °C,
98%
25 °C, 98%
Rev. 2.1 page 7 2012-11-28
16 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=250 µA
160
200
240
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
0.2 VDS(max)
0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
024681012
VGS [V]
Qgate [nC]
25 °C150 °C
25 °C, 98%
0.12 A
0.01
0.1
1
10
00.511.52
IF[A]
VSD [V]
150 °C,
98%
25 °C, 98%
Rev. 2.1 page 7 2012-11-28
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BSP149
Packa
g
e Outline:
Footprint: Packaging:
Rev. 2.1 page 8 2012-11-28
Dimensions in mm
Rev. 2.1 page 8 2012-11-28
contact the nearest Inflneon Technoloqies Office (www.infineon.com).
BSP149
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
Rev. 2.1 page 9 2012-11-28
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1 page 9 2012-11-28