FDZ291P Datasheet by onsemi

— FAIRCHILD — SEMiDDNDUDTDP" Absolute Maximum Ratings ed Sym bol Parameter Ratings Units Thermal Characteristics Package Marking and Orderin Information lEdSOW V98 lFWWJJQM‘Jd paiiiaaas A 91 IQUUEHO'd dLGZZGd
February 2006
2006 Fairchild Semiconductor Corporation FDZ291P Rev. C2 (W)
FDZ291P
P-Channel 1.5 V Specified PowerTrench
®
BGA MOSFET
General Description
Combining Fairchild’s advanced 1.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ291P minimizes both PCB space
and R
DS(ON)
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Applications
Battery management
Load switch
Battery protection
Features
–4.6 A, –20 V R
DS(ON)
= 40 m @ V
GS
= –4.5 V
R
DS(ON)
= 60 m @ V
GS
= –2.5 V
R
DS(ON)
= 160 m @ V
GS
= –1.5 V
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.85 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability.
GATE
Bottom
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage ±8 V
Drain Current – Continuous
(Note 1a)
–4.6
I
D
– Pulsed –10
A
P
D
Power Dissipation for Single Operation
(Note 1a)
1.7 W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
72 °C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
2
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
D FDZ291P 13” 8mm 10000 units
FDZ
29
1
P
P
-
Channel
1
.5
V Specified
PowerTrench
®
BGA MOSFET
0" Characteristics mm: W ATJ 0n Characteristics 4v m ID w ATJ VG: =45 V, in = ~46 A T¢=125DC Dynamic Characteristics Switching Characteristics Drain—Source Diode Characteristics and Maximum Ratings DramrSource Diode Forward Voitage L’J 8mm
FDZ291P Rev. C2 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA –20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient I
D
= –250 µA, Referenced to 25°C
–12
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V –1 µA
I
GSS
Gate–Body Leakage. V
GS
= ±8 V, V
DS
= 0 V ±100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= –250 µA –0.4
–0.7
–1.0
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient I
D
= –250 µA, Referenced to 25°C
2
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance V
GS
= –4.5 V, I
D
= –4.6 A
V
GS
= –2.5 V, I
D
= –3.6 A
V
GS
= –1.5 V, I
D
= –1.0 A
V
GS
= 4.5 V, I
D
= 4.6 A, T
J
=125°C
31
43
85
42
40
60
160
55
m
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –10
A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –4.6 A 16 S
Dynamic Characteristics
C
iss
Input Capacitance 1010
pF
C
oss
Output Capacitance 160
pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
80 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 11 19 ns
t
r
Turn–On Rise Time 9 18 ns
t
d(off)
Turn–Off Delay Time 36 58 ns
t
f
Turn–Off Fall Time
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
16 29 ns
Q
g
Total Gate Charge 9 13 nC
Q
gs
Gate–Source Charge 1.6
nC
Q
gd
Gate–Drain Charge
V
DS
= –10V, I
D
= –4.6 A,
V
GS
= –4.5 V
1.9
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –1.4
A
V
SD
DrainSource Diode Forward
Voltage V
GS
= 0V, I
S
= –1.4 A
(Note 2)
–0.7
–1.2
V
t
rr
Diode Reverse Recovery Time 17 ns
Q
rr
Diode Reverse Recovery Charge
I
F
= –4.6 A, dI
F
/dt = 100A/µs
5 nC
Notes:
1. R
θJA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user's board design.
a) 72°C/W when
mounted on a 1in
2
pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b) 157°C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ291P P-Channel 1.5 V Specified PowerTrench
®
BGA MOSFET
FDZ291P Rev. C2 (W)
Typical Characteristics
0
2
4
6
8
10
0 0.25 0.5 0.75 1 1.25 1.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
-3.0V
-3.5V
-2.5V
-2.0VV
GS
= -4.5V
-1.5V
0.6
1
1.4
1.8
2.2
2.6
3
0 2 4 6 8 10
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -1.5V
-3.5V
-3.0V
-4.5V
-2.5V
-2.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -4.6A
V
GS
= -4.5V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0 2 4 6 8 10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -2.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
0.5 0.75 1 1.25 1.5 1.75 2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ291P P-Channel 1.5 V Specified PowerTrench
®
BGA MOSFET
FDZ291P Rev. C2 (W)
Typical Characteristics
0
1
2
3
4
5
0 2 4 6 8 10 12
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -4.6A
V
DS
= -5V -15V
-10V
0
300
600
900
1200
1500
0 5 10 15 20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
100ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 157
o
C/W
T
A
= 25
o
C
10ms1ms
100µs
10s1s
0
5
10
15
20
0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJA
= 157°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 157 °C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ291P P-Channel 1.5 V Specified PowerTrench
®
BGA MOSFET
FDZ291P Rev. C2 (W)
Dimensional Pad and Layout
FDZ291P P-Channel 1.5 V Specified PowerTrench
®
BGA MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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