AOSS32136C Datasheet

ALPHA&0MEGA SEMICONDUCTOR ESD prmecuon Applications Grggg
AOSS32136C
General Description Product Summary
VDS
ID (at VGS=4.5V) 6.5A
RDS(ON) (at VGS=4.5V) < 20mΩ
RDS(ON) (at VGS=2.5V) < 26mΩ
RDS(ON) (at VGS=1.8V) < 45mΩ
ESD protection
Applications
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RqJL
20V N-Channel MOSFET
Orderable Part Number
Package Type
Form
Minimum Order Quantity
20V
• Trench Power MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• RoHS and Halogen-Free Compliant
Thermal Characteristics
W
ID
38
6.5
Parameter
Max
°C
Units
Junction and Storage Temperature Range
-55 to 150
Typ
Maximum Junction-to-Ambient A
°C/W
RqJA
70
100
90
AOSS32136C
SOT23-3
Tape & Reel
3000
V
A
Absolute Maximum Ratings TA=25°C unless otherwise noted
±12
V
Maximum
Units
Maximum Junction-to-Lead
°C/W
°C/W
Maximum Junction-to-Ambient A D
63
125
80
• Ideal for Load Switch
Power Dissipation B
0.8
PD
20
1.3
Gate-Source Voltage
Pulsed Drain Current C
5.0
Parameter
Drain-Source Voltage
Continuous Drain
Current
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
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AOSS32136C
Symbol Min Typ Max Units
BVDSS 20 V
VDS=20V, VGS=0V 1
TJ=55°C 5
IGSS ±10 μA
VGS(th) Gate Threshold Voltage 0.45 0.85 1.25 V
15 20
TJ=125°C 21 28
18 26
30 45
gFS 50 S
VSD 0.6 1 V
IS2 A
Ciss 660 pF
Coss 100 pF
Crss 80 pF
Rg2 4 6 Ω
Qg(4.5V) 7 14 nC
Qgs 1nC
Qgd 2nC
tD(on) 7ns
tr10 ns
tD(off) 32 ns
tf11 ns
trr 8ns
Qrr 6nC
mΩ
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
VDS=VGS, ID=250mA
VGS=4.5V, ID=6.5A
Gate resistance
f=1MHz
IDSS
μA
Zero Gate Voltage Drain Current
RDS(ON)
Static Drain-Source On-Resistance
VDS=0V, VGS12V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Diode Forward Voltage
DYNAMIC PARAMETERS
VGS=1.8V, ID=4.5A
Reverse Transfer Capacitance
VGS=0V, VDS=10V, f=1MHz
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
VGS=4.5V, VDS=10V, ID=6.5A
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,
INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale
Output Capacitance
Forward Transconductance
IS=1A, VGS=0V
VDS=5V, ID=6.5A
VGS=2.5V, ID=6A
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
IF=6.5A, di/dt=500A/ms
Turn-Off DelayTime
Turn-Off Fall Time
VGS=4.5V, VDS=10V, RL=1.54W,
RGEN=3W
IF=6.5A, di/dt=500A/ms
Turn-On Rise Time
Gate Source Charge
A. The value of RqJA is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with TA =25
°
C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev.2.0: January 2021 www.aosmd.com Page 2 of 5
ALPHA & OMEGA SEMICOND UCTUR \\ \ \
AOSS32136C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
0 1 2 3 4 5
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
35
40
45
50
0 3 6 9 12 15
RDS(ON) (mW)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS (A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
025 50 75 100 125 150 175
Normalized On-Resistance
Temperature C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=2.5V
ID=6A
V
GS
=4.5V
ID=6.5A
VGS=1.8V
ID=4.5A
0
10
20
30
40
0 1 2 3 4 5
RDS(ON) (mW)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=5V
VGS=2.5V
VGS=4.5V
ID=6.5A
25°C
125°C
0
10
20
30
40
0 1 2 3 4 5
ID (A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=1.5V
3V
4.5V
4V
2V
1.8V
VGS=1.8V
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AOSS32136C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.1
1
10
100
1000
1E-05 0.001 0.1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0
1
2
3
4
5
0 2 4 6 8
VGS (Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
Crss
V
DS
=10V
ID=6.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
qJA
.R
qJA
Ton
T
PDM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150
°
C
TA=25°C
10ms
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID (Amps)
VDS (Volts)
V
GS
> or equal to 1.8V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10ms
1ms
DC
R
DS(ON)
limited
TJ(Max)=150
°
C
T
A
=25
°
C
100ms
10ms
RqJA=125°C/W
Rev.2.0: January 2021 www.aosmd.com Page 4 of 5
T T: Jm
AOSS32136C
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
ton
td(off) tf
toff
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs -
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
trr
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Resistive Switching Test Circuit & Waveforms
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Figure D: Diode Recovery Test Circuit & Waveforms
Rev.2.0: January 2021 www.aosmd.com Page 5 of 5