TC7662A Datasheet by Microchip Technology

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Q ‘MICROCHIP TC7662A WWI—H—V \_H_H_H_l
2001-2012 Microchip Technology Inc. DS21468B-page 1
TC7662A
Features
Wide Operating Range
- 3V to 18V
Increased Output Current (40mA)
Pin Compatible with ICL7662/SI7661/TC7660/
LTC1044
No External Diodes Required
Low Output Impedance @ IL = 20mA
-40 Typ.
No Low-Voltage Terminal Required
CMOS Construction
Available in 8-Pin PDIP and 8-Pin CERDIP
Packages
Applications
Laptop Computers
•Disk Drives
Process Instrumentation
P-based Controllers
Device Selection Table
Package Type
General Description
The TC7662A is a pin-compatible upgrade to the
industry standard TC7660 charge pump voltage
converter. It converts a +3V to +18V input to a
corresponding -3V to -18V output using only two low-
cost capacitors, eliminating inductors and their
associated cost, size and EMI. In addition to a wider
power supply input range (3V to 18V versus 1.5V to
10V for the TC7660), the TC7662A can source output
currents as high as 40mA. The on-board oscillator
operates at a nominal frequency of 12kHz. Operation
below 12kHz (for lower supply current applications) is
also possible by connecting an external capacitor from
OSC to ground.
The TC7662A directly is recommended for designs
requiring greater output current and/or lower input/
output voltage drop. It is available in 8-pin PDIP and
CERDIP packages in commercial and extended
temperature ranges.
Part
Number Package Operating
Temp.
Range
TC7662ACPA 8-Pin PDIP 0°C to +70°C
TC7662AEPA 8-Pin PDIP -40°C to +85°C
TC7662AIJA 8-Pin CERDIP -25°C to +85°C
TC7662AMJA 8-Pin CERDIP -55°C to +125°C
1
2
3
4
8
7
6
5
TC7662A
NC
C+
GND
CVOUT
NC
OSC
VDD
8-Pin PDIP
8-Pin CERDIP
Charge Pump DC-to-DC Converter
l 7‘ .IV Hig: Hi; my,» @m
TC7662A
DS21468B-page 2 2001-2012 Microchip Technology Inc.
Functional Block Diagram
+
Comparator
with Hysteresis
C
F/F
Q
Q
VREF
Level
Shift
VDD
P SW1
CAP
CP
EXT
N SW4
N SW2
N SW3
CAP
CR
EXT
RL
VOUT
I
OSC
+
GND
8
2
3
OUT
5
4
7
+
+
TC7662A
Level
Shift
Level
Shift
Level
Shift
2001-2012 Microchip Technology Inc. DS21468B-page 3
TC7662A
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage VDD to GND.................................+18V
Input Voltage (Any Pin) .........(VDD + 0.3) to (VSS – 0.3)
Current into Any Pin............................................10mA
Output Short Circuit ........... Continuous (at 5.5V Input)
ESD Protection ................................................±2000V
Package Power Dissipation (TA 70°C)
8-Pin CERDIP..........................................800mW
8-Pin PDIP ...............................................730mW
Package Thermal Resistance
CPA, EPA JA.........................................140°C/W
IJA, MJA JA ............................................90°C/W
Operating Temperature Range
C Suffix............................................ 0°C to +70°C
I Suffix ..........................................-25°C to +85°C
E Suffix.........................................-40°C to +85°C
M Suffix ......................................-55°C to +125°C
Storage Temperature Range..............-65°C to +150°C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC7662A ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VDD = 15V, TA = +25°C, Test circuit (Figure 3-1) unless otherwise noted.
Symbol Parameter Min Typ Max Units Test Conditions
VDD Supply Voltage 3 18 V
ISSupply Current
510
560
650
190
210
210
700
AR
L =
VDD = +15V
0C TA +70C
-55°C TA +125°C
VDD = +5V
0C TA +70C
-55°C TA +125°C
ROOutput Source Resistance
40
50
100
50
60
125
IL = 20mA, VDD = +15V
IL = 40mA, VDD = +15V
IL = 3mA, VDD = +5V
FOSC Oscillator Frequency 12 kHz
PEFF Power Efficiency 93
97
%V
DD = +15V
RL = 2k
VEFF Voltage Efficiency 99
96
99.9
%V
DD = +15V
RL =
Over operating temperature range.
TC7662A
DS21468B-page 4 2001-2012 Microchip Technology Inc.
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1: PIN FUNCTION TABLE
Pin No.
(8-Pin PDIP,
CERDIP) Symbol Description
1 NC No connection.
2C
+Charge pump capacitor positive terminal.
3 GND Ground terminal.
4C
-Charge pump capacitor negative terminal.
5V
OUT Output voltage.
6 NC No connection.
7 OSC Oscillator control input. Bypass with an external capacitor to slow the oscillator.
8V
DD Power supply positive voltage input.
2001-2012 Microchip Technology Inc. DS21468B-page 5
TC7662A
3.0 DETAILED DESCRIPTION
The TC7662A is a capacitive charge pump (sometimes
called a switched-capacitor circuit), where four
MOSFET switches control the charge and discharge of
a capacitor.
The functional block diagram shows how the switching
action works. SW1 and SW2 are turned on simulta-
neously, charging CP to the supply voltage, VDD. This
assumes that the ON resistance of the MOSFETs in
series with the capacitor produce a charging time
(3 time constants) less than the ON time provided by
the oscillator frequency, as shown:
3 (RDS(ON) CP) <CP/(0.5 fOSC).
In the next cycle, SW1 and SW2 are turned OFF and,
after a very short interval with all switches OFF
(preventing large currents from occurring due to cross
conduction), SW3 and SW4 are turned ON. The charge
in CP is then transferred to CR, but with the polarity
inverted. In this way, a negative voltage is derived.
An oscillator supplies pulses to a flip-flop that is fed to
a set of level shifters. These level shifters then drive
each set of switches at one-half the oscillator
frequency.
The oscillator has a pin that controls the frequency
of oscillation. Pin 7 can have a capacitor added that
is connected to ground. This will lower the frequency
of the oscillator by adding capacitance to the
internal timing capacitor of the TC7662A. (See Typical
Characteristics – Oscillator Frequency vs. COSC.)
FIGURE 3-1: TC7662A TEST CIRCUIT
3.1 Theoretical Power Efficiency
Considerations
In theory, a voltage converter can approach 100%
efficiency if certain conditions are met:
1. The drive circuitry consumes minimal power.
2. The output switches have extremely low ON
resistance and virtually no offset.
3. The impedances of the pump and reservoir
capacitors are negligible at the pump frequency.
The TC7662A approaches these conditions for
negative voltage conversion if large values of CP and
CR are used.
Note: Energy is lost only in the transfer of charge
between capacitors if a change in voltage
occurs.
The energy lost is defined by:
E = 1/2 CP (V12 – V22)
V1 and V2 are the voltages on CP during the pump and
transfer cycles. If the impedances of CP and CR are
relatively high at the pump frequency (refer to Figure 3-
1), compared to the value of RL, there will be a
substantial difference in voltages V1 and V2. Therefore,
it is desirable not only to make CR as large as possible
to eliminate output voltage ripple, but also to employ a
correspondingly large value for CP in order to achieve
maximum efficiency of operation.
3.2 Dos and Don'ts
Do not exceed maximum supply voltages.
Do not short circuit the output to V+ supply for
voltages above 5.5V for extended periods;
however, transient conditions including start-up
are okay.
When using polarized capacitors in the inverting
mode, the + terminal of CP must be connected to
pin 2 of the TC7662A and the + terminal of CR
must be connected to GND (pin 3).
If the voltage supply driving the TC7662A has a
large source impedance (25-30 ohms), then a
2.2F capacitor from pin 8 to ground may be
required to limit the rate of rise of the input voltage
to less than 2V/sec.
TC7662A
1
2
3
4
8
7
5
+
10μF
10μF
VDD
(+5V)
NC
NC
6
+
CP
CR
VOUT
(-5V)
COSC RL
IS
IL
osc,
TC7662A
DS21468B-page 6 2001-2012 Microchip Technology Inc.
4.0 TYPICAL APPLICATIONS
4.1 Simple Negative Voltage
Converter
The majority of applications will undoubtedly utilize the
TC7662A for generation of negative supply voltages.
Figure 4-1 shows typical connections to provide a
negative supply where a positive supply of +3V to +18V
is available.
FIGURE 4-1: SIMPLE NEGATIVE
CONVERTER AND ITS
OUTPUT EQUIVALENT
The output characteristics of the circuit in Figure 4-1
are those of a nearly ideal voltage source in series with
a resistance as shown in Figure 4-1b. The voltage
source has a value of -(VDD). The output impedance
(RO) is a function of the ON resistance of the internal
MOS switches (shown in the Functional Block
Diagram), the switching frequency, the value of CP and
CR, and the ESR (equivalent series resistance) of CP
and CR. A good first order approximation for RO is:
Combining the four RSWX terms as RSW, we see that:
RSW, the total switch resistance, is a function of supply
voltage and temperature (See Section 5.0, Typical
Characteristics “Output Source Resistance” graphs),
typically 23 at +25°C and 5V. Careful selection of CP
and CR will reduce the remaining terms, minimizing the
output impedance. High value capacitors will
reduce the 1/(fPUMP x CP) component, and low ESR
capacitors will lower the ESR term. Increasing the
oscillator frequency will reduce the 1/(fPUMP x CP) term,
but may have the side effect of a net increase in output
impedance when CP > 10F and there is not enough
time to fully charge the capacitors every cycle. In a typ-
ical application when fOSC = 12kHz and C = CP = CR =
10F:
Since the ESRs of the capacitors are reflected in the
output impedance multiplied by a factor of 5, a high
value could potentially swamp out a low 1/(fPUMP x CP)
term, rendering an increase in switching frequency
or filter capacitance ineffective. Typical electrolytic
capacitors may have ESRs as high as 10.
1
2
3
4
8
7
6
5
TC7662A
10μF
+
V
DD
+
10μF
V
OUT
= -V+
V
OUT
R
O
V
DD
V
DD
V
DD
V
DD
+
AB
RO 2(RSW1 + RSW2 + ESRCP) + 2(RSW3 + RSW4 +
ESRCP) + + ESRCR
1
fPUMP x CP
(fPUMP = , RSWX = MOSFET switch resistance)
fOSC
2
RO 2 x RSW + + 4 x ESRCP + ESRCR
1
fPUMP x CP
RO 2 x 23 + + 4 x ESRCP + ESRCR
1
(5 x 123 x 10 x 10-6)
RO (46 + 20 + 5 x ESRC)
2001-2012 Microchip Technology Inc. DS21468B-page 7
TC7662A
4.2 Output Ripple
ESR also affects the ripple voltage seen at the output.
The total ripple is determined by 2 voltages, A and B,
as shown in Figure 4-2. Segment A is the voltage drop
across the ESR of CR at the instant it goes from being
charged by CP (current flowing into CR) to being dis-
charged through the load (current flowing out of CR).
The magnitude of this current change is 2 x IOUT, hence
the total drop is 2 x IOUT x ESRCR volts. Segment B is
the voltage change across CR during time t2, the half of
the cycle when CR supplies current to the load. The
drop at B is IOUT x t2/CR volts. The peak-to-peak ripple
voltage is the sum of these voltage drops:
FIGURE 4-2: OUTPUT RIPPLE
4.3 Paralleling Devices
Any number of TC7662A voltage converters may be
paralleled to reduce output resistance (Figure 4-3).
The reservoir capacitor, CR, serves all devices, while
each device requires its own pump capacitor, CP. The
resultant output resistance would be approximately:
4.4 Cascading Devices
The TC7662A may be cascaded as shown (Figure 4-4)
to produce larger negative multiplication of the initial
supply voltage. However, due to the finite efficiency of
each device, the practical limit is 10 devices for light
loads. The output voltage is defined by:
VOUT = – n (VIN)
where n is an integer representing the number of
devices cascaded. The resulting output resistance
would be approximately the weighted sum of the
individual TC7662A ROUT values.
FIGURE 4-3: PARALLELING DEVICES LOWERS OUTPUT IMPEDANCE
FIGURE 4-4: INCREASED OUTPUT VOLTAGE BY CASCADING DEVICES
1
2 x fPUMP x CR
VRIPPLE ( + 2 x ESRCR x IOUT)
t2t1
B
A
V
0
-(V
DD
)
ROUT =ROUT (of TC7662A)
n (number of devices)
1
2
3
4
8
7
6
5
TC7662A
VDD
1
2
3
4
8
7
6
5
TC7662A
RL
C2
C1
"n"
"1"
+
C1
4:
TC7662A
DS21468B-page 8 2001-2012 Microchip Technology Inc.
4.5 Changing the TC7662A Oscillator
Frequency
It is possible to increase the conversion efficiency of
the TC7662A at low load levels by lowering the
oscillator frequency. This reduces the switching losses,
and is shown in Figure 4-5. However, lowering the
oscillator frequency will cause an undesirable increase
in the impedance of the pump (CP) and reservoir (CR)
capacitors; this is overcome by increasing the values of
CP and CR by the same factor that the frequency has
been reduced. For example, the addition of a 100pF
capacitor between pin 7 (OSC) and VDD will lower the
oscillator frequency to 2kHz from its nominal frequency
of 12kHz (multiple of 6), and thereby necessitate a
corresponding increase in the value of CP and CR (from
10F to 68F).
FIGURE 4-5: LOWERING OSCILLATOR
FREQUENCY
4.6 Positive Voltage Doubling
The TC7662A may be employed to achieve positive
voltage doubling using the circuit shown in Figure 4-6.
In this application, the pump inverter switches of the
TC7662A are used to charge CP to a voltage level of
VDD – VF (where VDD is the supply voltage and VF is
the forward voltage on CP plus the supply voltage (VDD)
applied through diode D2 to capacitor CR). The voltage
thus created on CR becomes (2 VDD) – (2 VF), or twice
the supply voltage minus the combined forward voltage
drops of diodes D1 and D2.
The source impedance of the output (VOUT) will depend
on the output current, but for VDD = 5V and an output
current of 10 mA, it will be approximately 60.
FIGURE 4-6: POSITIVE VOLTAGE
MULTIPLIER
4.7 Combined Negative Voltage
Conversion and Positive Supply
Multiplication
Figure 4-7 combines the functions shown in Figure 4-1
and Figure 4-6 to provide negative voltage conversion
and positive voltage doubling simultaneously. This
approach would be, for example, suitable for generat-
ing +9V and -5V from an existing +5V supply. In this
instance, capacitors C1 and C3 perform the pump and
reservoir functions, respectively, for the generation of
the negative voltage, while capacitors C2 and C4 are
pump and reservoir, respectively, for the doubled
positive voltage. There is a penalty in this configuration
which combines both functions, however, in that the
source impedances of the generated supplies will be
somewhat higher due to the finite impedance of the
common charge pump driver at pin 2 of the device.
FIGURE 4-7: COMBINED NEGATIVE
CONVERTER AND
POSITIVE DOUBLER
4.8 Voltage Splitting
The same bidirectional characteristics can be used to
split a higher supply in half, as shown in Figure 4-8.
The combined load will be evenly shared between the
two sides. Because the switches share the load in
parallel, the output impedance is much lower than in
the standard circuits, and higher currents can be drawn
from the device. By using this circuit, and then the
circuit of Figure 4-4, +15V can be converted (via +7.5V
and -7.5V) to a nominal -15V, though with rather high
series resistance (~250).
FIGURE 4-8: SPLITTING A SUPPLY IN
HALF
1
2
3
4
8
7
6
5
+
V
OUT
C
OSC
+
TC7662A
10μF
10μF
V
DD
1
2
3
4
8
7
6
5
VOUT =
(2 VDD) – (2 VF)
+
CR
D1
D2
+
CP
TC7662A
VDD
1
2
3
4
8
7
6
5
+
V
DD
V
OUT
=
(2 V
DD
) – (2 V
F
)
C
1
D
1
+
+
C
3
C
4
V
OUT
=
-(V
DD
– V
F
)
C
2
TC7662A
D
2
+
+
R
L1
R
L2
V
OUT
=
V
DD
– V
2
50μF
50
μF
V
DD
V
50μF
+
1
2
8
7
TC7662A
3
4
6
5
+
Wk (1) 1k ‘ n nu non , u {DFD VDD = 5v, IL = mm mm IL: 20mA
2001-2012 Microchip Technology Inc. DS21468B-page 9
TC7662A
5.0 TYPICAL CHARACTERISTICS
Circuit of Figure 3-1, CP = CR = 10F, CESRCP CESRCR 1, TA = 25°C unless otherwise noted.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
700
600
500
400
300
200
100
-60 -40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
SUPPLY CURRENT (μA)
V
DD
= 15V
V
DD
= 5V
0
Supply Current vs. Temperature
20
18
16
14
12
10
8
-60 -40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
FREQUENCY (kHz)
6
Frequency vs. Temperature
100
LOAD CURRENT (mA)
POWER CONVERSION EFFICIENCY (%)
Power Conversion Efficiency vs. I
LOAD
16 32 48 64 80
80
60
40
20
90
70
50
30
10
8244056720
150
120
90
60
30
135
105
75
45
15
0
SUPPLY CURRENT (mA)
Efficiency
Supply
Current
110
T
A
= +25°C
165
1k
1
00
1
1
0
1
00
1
000
10
,
00
0
CAPACITANCE
(
pF
)
F
REQUENCY
(
Hz
)
1
0
Oscillator Frequenc
y
vs.
C
OSC
1
0k
T
A
T
= +2
5
°
C
160
140
120
100
80
60
40
-60 -40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
OUTPUT RESISTANCE ( )
V
DD
= 15V, I
L
= 20mA
Output Resistance vs. Temperature
20
V
DD
= 5V, I
L
= 3mA
Ω
100
INPUT VOLTAGE (V)
OUTPUT RESISTANCE ( )
Output Resistance vs. Input Voltage
4 8 12 16 20
80
60
40
20
90
70
50
30
10
2 6 10 14 180
Ω
110
I
L
= 20mA
T
A
= +25°C
( 0) (1 0) Lr‘I Lu‘l Lu“ LLl iéHLA L 18; .7 )4 ( 4) 77(— 8) _ 5) E 3 ( ( 1» If Y 2) A , 4L ( 9) { 5) ( 9) 8)
TC7662A
DS21468B-page 10 2001-2012 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
Package marking data not available at this time.
6.2 Package Dimensions
3
°
MIN.
PIN 1
.260
(
6.60
)
.240
(
6.10
)
.045
(
1.14
)
.030
(
0.76
)
.070
(
1.78
)
.040
(
1.02
)
.400
(
10.16
)
.348
(
8.84
)
.200
(
5.08
)
.140
(
3.56
)
.150
(
3.81
)
.115
(
2.92
)
.110
(
2.79
)
.090
(
2.29
)
.022
(
0.56
)
.015
(
0.38
)
.040
(
1.02
)
.020
(
0.51
)
.015
(
0.38
)
.008
(
0.20
)
.310
(
7.87
)
.290
(
7.37
)
.400
(
10.16
)
.310
(
7.87
)
8
-P
i
n Plast
i
c DI
P
Dimensions: inches (mm)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
mm 3 MW 717 x H H mm L V J
2001-2012 Microchip Technology Inc. DS21468B-page 11
TC7662A
.400
(
10.16
)
.370
(
9.40
)
.300
(
7.62
)
.230
(
5.84
)
.065
(
1.65
)
.045
(
1.14
)
.055
(
1.40
)
MAX
.
.020 (0.51) MIN
.
PIN 1
.200
(
5.08
)
.160
(
4.06
)
.200
(
5.08
)
.125
(
3.18
)
.110
(
2.79
)
.090
(
2.29
)
.020
(
0.51
)
.016
(
0.41
)
.040
(
1.02
)
.020
(
0.51
)
.320
(
8.13
)
.290
(
7.37
)
.150
(
3.81
)
MIN.
3
°
MIN.
8-Pin CDIP (Narrow)
.015
(
0.38
)
.008
(
0.20
)
.400
(
10.16
)
.320
(
8.13
)
Dimensions: inches (mm)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
TC7662A
DS21468B-page 12 2001-2012 Microchip Technology Inc.
7.0 REVISION HISTORY
Revision B (December 2012)
Added a note to each package outline drawing.
Sales and Suggort
2001-2012 Microchip Technology Inc. DS21468B-page13
TC7662A
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC7662A
DS21468B-page14 2001-2012 Microchip Technology Inc.
NOTES:
YSTEM <2>
2001-2012 Microchip Technology Inc. DS21468B-page 15
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ensure that your application meets with your specifications.
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Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2001-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620768426
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
6‘ ‘MICRDCHIP
DS21468B-page 16 2001-2012 Microchip Technology Inc.
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Worldwide Sales and Service
11/29/12

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