CMPA901A035F Datasheet

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Rev 0.3 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CMPA901A035F
Typical Performance Over 9.0 - 11.0 GHz (TC = 25˚C)
Note: Measured in the CMPA901A035F-AMP application circuit, under CW signal, PIN = 23 dBm
Note: Measured in the CMPA901A035F-AMP application circuit, under 100 μs pulse width, 10% duty cycle, PIN = 23 dBm
PN: CMPA901A035F
Package Type: 440213
Description
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers
35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.
The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25
mm x 9.9 mm metal/ceramic flanged package. It offers high gain and
superior efficiency in a small footprint package at 50 ohms.
CW Performance 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz Units
Output Power 46 45 43 42 37 W
Gain 23.7 23.5 23.3 23.2 22.7 dB
Power Added Efficiency 40 36 34 34 35 %
Pulsed Performance 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz Units
Output Power 51 52 50 48 40 W
Gain 24.1 24.2 24.0 23.8 23.0 dB
Power Added Efficiency 41.7 38.0 36.5 36.4 35.3 %
35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier
Features
9.0 - 11.0 GHz Operation
Typical Output Power 40 W
Typical Power Gain 23 dB
Typical PAE 35%
Operation up to 28 V
Applications
Military Radar
Marine Radar
Weather Radar
Medical Applications
CMPA901A035F 2
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Absolute Maximum Ratings (not simultaneous) at 25˚C
Electrical Characteristics (Frequency = 9.0 GHz to 11.0 GHz unless otherwise stated; TC = 25˚C)
Note:
1 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library
Notes:
1 At 25 ˚C
2 Measured on-wafer prior to packaging
3 Scaled from PCM data
4 Measured in the CMPA901A035F-TB fixture (AD-938547)
5 Fixture loss de-embedded using the following offsets. The offset is subtracted from the input offset value and added to the output offset value
a) 9.0 GHz - 0.20 dB
b) 10.0 GHz - 0.25 dB
6 Power added efficiency = (POUT - PIN) / PDC
Parameter Symbol Rating Units Conditions
Drain-source Voltage VDS 84 VDC 25˚C
Gate-source Voltage VGS -10, +2 VDC 25˚C
Storage Temperature TSTG -40, +150 ˚C
Operating Junction Temperature T
J225 ˚C
Maximum Forward Gate Current IGMAX 19 mA 25˚C
Soldering Temperature1TSTG 245 ˚C
Screw Torque T40 in-oz
Thermal Resistance, Junction to Case, CW RθJC 1.3 ˚C/W 85˚C @ PDISS = 80 W
Thermal Resistance, Junction to Case, Pulsed RθJC 0.93 ˚C/W 85˚C @ PDISS = 80 W
Case Operating Temperature TC-40, +150 ˚C
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1,2
Gate Threshold VTH -3.8 -2.8 -2.3 V VDS = 10 V, IDS = 19.8 mA
Saturated Drain Current3IDS 14.3 19.8 A VDS = 6 V, VGS = 2 V
Drain-Source Breakdown Voltage VBD 84 ––V VGS = -8 V, IDS = 19.8 mA
RF Characteristics
Small Signal Gain S21 34 dB VDD = 28 V, IDQ = 1.5 A, PIN = -23 dBm
Input Return Loss S11 – -6.4 dB VDD = 28 V, IDQ = 1.5 A, PIN = -23 dBm
Output Return Loss S22 – -6.8 dB VDD = 28 V, IDQ = 1.5 A, PIN = -23 dBm
Output Power 4,5 POUT1 45.7 W VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, Freq = 9 GHz
Output Power 4,5 POUT2 44.7 W VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, Freq = 10 GHz
Power Added Efficiency 4,5,6 PAE140 % VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, Freq = 9 GHz
Power Added Efficiency 4,5,6 PAE2 37 – % VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, Freq = 10 GHz
Output Mismatch Stress VSWR 5:1 VSWR YNo damage at all phase angles,
VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, CW
4n an 2n 1n .1n .2n fi —321 _s11 _321 3.0 3.5 an 9.5 mo 1n.5 11.0 11.5 12.0
CMPA901A035F 3
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-20
-10
0
10
20
30
40
8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Gain, Return Loss (dB)
Frequency (GHz)
Small Signal Gain and Return Loss vs. Frequency
CMPA901A035F
VDD = 28V, IDQ=1.5A
S21
S11
S22
Figure 1. Small Signal Gain and Return Loss vs. Frequency of the CMPA901A035F
as Measured in Circuit CMPA901A035F-AMP Demonstration Amplifier
VDD = 28 V, IDQ = 1.5 A
Gain, Return Loss (dB)
Frequency (GHz)
Figure 2. CW Output Power vs. Frequency as a Function of Input Power of the CMPA901A035F
as Measured in Demonstration Amplifier Circuit CMPA901A035F-AMP
VDD = 28 V, IDQ = 1.5 A
Output Power (dBm)
Frequency (GHz)
CMPA901A035F Typical Performance
43.0
43.5
44.0
44.5
45.0
45.5
46.0
46.5
47.0
47.5
48.0
8.5 9 9.5 10 10.5 11 11.5
Output Power (dBm)
Frequency (GHz)
18dBm
20dBm
23dBm
26dBm
an :5 3.5 an 9.5 mm 105
CMPA901A035F 4
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0
5
10
15
20
25
30
8.5 9.0 9.5 10.0 10.5 11.0 11.5
Gain (dB)
Frequency (GHz)
18dBm
20dBm
23dBm
26dBm
Figure 3. CW Power Gain vs. Frequency as a Function of Input Power
VDD = 28 V, IDQ = 1.5 A
Gain (dB)
Frequency (GHz)
Figure 4. CW Power Added Efficiency vs. Frequnecy as a Function of Input Power
VDD = 28 V, IDQ = 1.5 A
Power Added Efficiency (%)
Frequency (GHz)
CMPA901A035F Typical Performance
0
5
10
15
20
25
30
35
40
45
8.5 9.0 9.5 10.0 10.5 11.0 11.5
Power Added Efficiency (%)
Frequency (GHz)
18dBm
20dBm
23dBm
26dBm
AB 4n :9 :3 1n 12 15 1s 1c 2» 22 25 2a 45 4n :5 an 25 2o 15 "' — PAE_9pI) iPAEJflpI) _PAE_11pI) 1n :2 14 1a 1: 2o 22 24 2a
CMPA901A035F 5
Rev 0.3 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
38
39
40
41
42
43
44
45
46
47
48
10 12 14 16 18 20 22 24 26
Output Power (dBm)
Input Power (dBm)
CW Pout vs. Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A,
Po_9p0
Po_10p0
Po_11p0
Figure 5. CW Output Power vs. Input Power as a Function of Input Power
VDD = 28 V, IDQ = 1.5 A
Output Power (dBm)
Input Power (dBm)
Figure 6. CW Power Added Efficiency vs. Input Power as a Function of Input Power
VDD = 28 V, IDQ = 1.5 A
Power Added Efficiency (%)
Input Power (dBm)
CMPA901A035F Typical Performance
0
5
10
15
20
25
30
35
40
45
10 12 14 16 18 20 22 24 26
Power Added Efficiency (%)
Input Power (dBm)
CW PAE vs. Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A,
PAE_9p0
PAE_10p0
PAE_11p0
:5 an 25 2o 15 m 4a.a 47.5 47.a 45.5 45a 45.5 45.a 44.5 44.4: 42.5 41a m 12 14 1s 1: 2a 22 24 25 _ 1mm imam —2:uam 5.5 s 9.5 1:: ms 11 “.5
CMPA901A035F 6
Rev 0.3 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
0
5
10
15
20
25
30
35
10 12 14 16 18 20 22 24 26
Gain (dB)
Input Power (dBm)
CW Gain vs. Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A,
Pg_9p0
Pg_10p0
Pg_11p0
Figure 7. CW Gain vs. Input Power as a Function of Input Power
VDD = 28 V, IDQ = 1.5 A
Gain (dBm)
Input Power (dBm)
Figure 8. Pulsed Output Power vs. Frequency as a Function of Input Power
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
Output Power (dBm)
Frequency (GHz)
CMPA901A035F Typical Performance
43.0
43.5
44.0
44.5
45.0
45.5
46.0
46.5
47.0
47.5
48.0
8.5 9 9.5 10 10.5 11 11.5
Output Power (dBm)
Frequency (GHz)
Pulsed Output Power vs. Frequency for diffrent Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A, 100 us 10%
18dBm
20dBm
23dBm
an 25 2» 15 m _1Bdam —2|)dam _23dam 9.n 1a 1a.: 11 11.5 mo «:5 11.n 11.5
CMPA901A035F 7
Rev 0.3 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
0
5
10
15
20
25
30
8.5 9 9.5 10 10.5 11 11.5
Gain (dB)
Frequency (GHz)
Pulsed Power Gain vs. Frequency for diffrent Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A, 100 us 10%
18dBm
20dBm
23dBm
Figure 9. Pulsed Power Gain vs. Frequency
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
Gain (dB)
Frequency (GHz)
Figure 10. Pulsed Power Added Efficiency vs. Frequency
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
Power Added Efficiency (%)
Frequency (GHz)
CMPA901A035F Typical Performance
0
5
10
15
20
25
30
35
40
45
50
8.5 9.0 9.5 10.0 10.5 11.0 11.5
Power Added Efficiency (%)
Frequency (GHz)
18dBm
20dBm
23dBm
26dBm
II) :9 an m 12 14 1s 13 2o 22 25 2s a w —PAE_9yD frag up» ’5 flag 1 pl) an 2: 2n 1: 1a 1a 12 15 1s 13 2o 22 2A 25
CMPA901A035F 8
Rev 0.3 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
38
39
40
41
42
43
44
45
46
47
48
10 12 14 16 18 20 22 24 26
Output Power (dBm)
Input Power (dBm)
Pulsed Pout vs. Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A, 100uS/10%
Po_9p0
Po_10p0
Po_11p0
Figure 11. Pulsed Output Power vs. Input Power
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
Output Power (dBm)
Input Power (dBm)
Figure 12. Pulsed Power Added Efficiency vs. Input Power
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
Power Added Efficiency (%)
Input Power (dBm)
CMPA901A035F Typical Performance
0
5
10
15
20
25
30
35
40
45
10 12 14 16 18 20 22 24 26
Power Added Efficiency (%)
Input Power (dBm)
Pulsed PAE vs. Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A,
PAE_9p0
PAE_10p0
PAE_11p0
as an 25 2» 15 m iPGfiyfl 7953 up» 79531.» m 12 14 1s 13 2o 22 25 2s in: MS an _59 M 71m) us 47-3 7mm _ sno us ”.5 ”.2 a 45.3 45.: 45.5 45.2 n so m an m 25o am :50 Ana 45o soa sso m
CMPA901A035F 9
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0
5
10
15
20
25
30
35
10 12 14 16 18 20 22 24 26
Gain (dB)
Input Power (dBm)
Pulsed Gain vs. Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A,
PG_9p0
PG_10p0
PG_11p0
Figure 13. Pulsed Gain vs. Input Power
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
Gain (dB)
Input Power (dBm)
Figure 14. Pulse Droop
VDD = 28 V, IDQ = 1.5 A, Frequency = 9.5 GHz, PIN = 26 dBm
Pout (dBm)
Pulse Length (μs)
CMPA901A035F Typical Performance
46
46.2
46.4
46.6
46.8
47
47.2
47.4
47.6
47.8
48
0 50 100 150 200 250 300 350 400 450 500 550 600
Pout (dBm)
Pulse Length S)
Pulse Droop
CMPA901A035A
Pin=26 dBm,Freq. 9.5 GHz VDD=28,IDQ=1.5 A
10 uS
50 us
100 us
200us
500 us
F-AMP Demonstration Amplifier Circuit
CMPA901A035F 10
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CMPA901A035F-AMP Demonstration Amplifier Circuit Bill of Materials
CMPA901A035F-AMP Demonstration Amplifier Circuit
Designator Description Qty
C15 CAP ELECT 100UF 80V AFK SMD 1
C16-C23 CAP,33000PF, 0805,100V, X7R 8
R1,R2 RES 0.0 OHM 1/16W 0402 SMD 2
J1,J2 CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST, 20MIL 2
J4 CONN, SMB, STRAIGHT JACK RECEPTACLE,
SMT, 50 OHM, Au PLATED 1
J3 HEADER RT>PLZ .1CEN LK 9POS 1
W1 WIRE, BLACK, 22 AWG ~ 1.50” 1
W2 WIRE, BLACK, 22 AWG ~ 1.75” 1
W3 WIRE, BLACK, 22 AWG ~ 3.0” 1
Q1 CMPA901A035F 1
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CMPA901A035F 11
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W3
W2
W1
CMPA901A035F-AMP Demonstration Amplifier Circuit Schematic
CMPA901A035F-AMP Demonstration Amplifier Circuit Outline
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CMPA901A035F 12
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Product Dimensions CMPA901A035F
PRELIMINARY
Pin Number Qty
1 Gate Bias for Stage 1, 2 & 3
2 Gate Bias for Stage 1, 2 & 3
3RF IN
4Gate Bias for Stage 1, 2 & 3
5 Gate Bias for Stage 1, 2 & 3
6 Drain Bias
7Drain Bias
8 RF OUT
9Drain Bias
10 Drain Bias
CMPA901A035F 13
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Table 1.
Table 2.
Parameter Value Units
Lower Frequency 9.0 GHz
Upper Frequency110.0 GHz
Power Output 35 W
Package Flanged -
Character Code Code Value
A 0
B 1
C 2
D3
E4
F 5
G6
H 7
J8
K9
Examples: 1A = 10.0 GHz
2H = 27.0 GHz
Part Number System
Note1: Alpha characters used in frequency code indicate a value
greater than 9.9 GHz. See Table 2 for value.
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency
Cree MMIC Power Amplifier
CMPA901A035F
CMPA901A035F 14
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Product Ordering Information
Order Number Description Unit of Measure Image
CMPA901A035F GaN HEMT Each
CMPA901A035F-AMP Test board with GaN HEMT installed Each
CMPA901A035F 15
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Notes
Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in
large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would
reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringe-
ment of patents or other rights of third parties which may result from use of the information contained herein. No license
is granted by implication or otherwise under any patent or patent rights of Cree.
© 2019 - 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
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