CM200E3U-12H Datasheet by Powerex Inc.

Feb. 2009
1
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................... 200A
●VCES ..........................................................600V
●Insulated Type
●1-element in a pack
APPLICATION
Brake
CM200E3U-12H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
2–φ6.5 MOUNTING HOLES
3-M5 NUTS
TAB #110. t = 0.5
CM
E2 G2
LABEL
C2E1 C1
E2
12mm deep
4
13.5
13
94
48
24
30
-0.5
+1
12
7 80
±0.25
11
4
17 2323
7.5
21.2
16 16
2.5
25
2.5
T
C
measured point
we 1“ = 7400A ’u mi 1“ = 400m . MITSUBISHI n ELECTRIC
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
VGE = 0V
VCE = 0V
TC = 25°C
Pulse (Note 1)
TC = 25°C
Pulse (Note 1)
TC = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
600
±20
200
400
200
400
650
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector current
Emitter current
Symbol Item Conditions UnitRatings
V
V
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 300V, IC = 200A, VGE = 15V
VCC = 300V, IC = 200A
VGE = ±15V
RG = 3.1Ω
Resistive load
IE = 200A, VGE = 0V
IE = 200A
die / dt = –400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
IF = 200A, Clamp diode part
IF = 200A
dif / dt = –400A / µs, Clamp diode part
Junction to case, Clamp diode part
Case to heat sink,
conductive grease applied
(Per 1/2 module) (Note 6)
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V (Note 4)
VCE = 10V
VGE = 0V
1
0.5
3.0
—
17.6
9.6
2.6
—
150
400
300
300
2.6
160
—
0.19
0.35
2.6
160
—
0.35
—
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
V
ns
µC
K/W
K/W
—
—
2.4
2.6
—
—
—
400
—
—
—
—
—
—
0.48
—
—
—
—
0.48
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
4.5 7.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
Contact thermal resistance
Min Typ Max
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
(Note 2)
trr
(Note 2)
Qrr
(Note 2)
Rth(j-c)Q
Rth(j-c)R
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Item Test Conditions
VGE(th)
VCE(sat)
Limits Unit
Thermal resistance (Note 5)
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Tstg
Viso
—
—
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
. MITSUBISHI n ELECTRIC
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
0.6 1.0 1.4 1.8 2.2 2.6 3.0
10
0
10
1
2
3
5
7
10
2
2
3
5
7
Tj = 25°C
400
300
200
100
0100 246
500
8
VGE=20
(V)
15
11
13
12
14
9
8
Tj=25°C
10
300
200
400
100
0200 481216
VCE = 10V
Tj = 25°C
Tj = 125°C
0
1
2
3
4
5
0 100 200 300 400 500
Tj = 25°C
Tj = 125°C
VGE = 15V 10
8
6
4
2
0200 481216
Tj = 25°C
IC = 400A
IC = 200A
IC = 80A
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
VGE = 0V
Cies
Coes
Cres
PERFORMANCE CURVES
Vcc : 300V . MITSUBISHI n ELECTRIC
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
d(off)
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
t
d(on)
t
f
t
r
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–di/dt = 400A/µs
T
j
= 25°C
t
rr
l
rr
10
1
10
–3
10–5 10–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
T
C
= 25°C
Per unit base = R
th(j – c)
= 0.19K/W
10
1
10
–3
10–5 10–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
T
C
= 25°C
Per unit base = R
th(j – c)
= 0.35K/W
0
5
10
15
20
0 100 200 300 400 500 600
V
CC
= 200V
V
CC
= 300V
I
C
= 200A
COLLECTOR CURRENT I
C
(A)EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT I
rr
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
TIME (s)TIME (s)