Si7960DP Datasheet by Vishay Siliconix

RoHS CquuANr HALOGEN FREE mm. OJ“ OJ NrChannd MOSFET Commuous Source Current Dwode Canducnon So‘denn Recommendations PeakTem eralure 1www. wshay cam/999 .7 75257
Vishay Siliconix
Si7960DP
Document Number: 73075
S09-0223-Rev. B, 09-Feb-09
www.vishay.com
1
Dual N-Channel 60-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package
• Dual MOSFET for Space Savings
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
60
0.021 at VGS = 10 V 9.7
0.025 at VGS = 4.5 V 8.9
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm 5.15 mm
Bottom View
PowerPAK SO-8
Si7960DP-T1-E3 (Lead (Pb)-free)
Si7960DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
Ordering Information:
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFE
T
D
2
G
2
S
2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
9.7 6.2
A
TA = 70 °C 7.8 5.0
Pulsed Drain Current IDM 40
Continuous Source Current (Diode Conduction)aIS2.9 1.2
Single Avalanche Current L = 0.1 mH IAS 23
Single Avalanche Energy EAS 27 mJ
Maximum Power DissipationaTA = 25 °C PD
3.5 1.4 W
TA = 70 °C 2.2 0.9
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)b, c 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat ≤ 10 s RthJA
26 35
°C/W
Steady State 60 85
Maximum Junction-to-Case (Drain) Steady State RthJC 2.2 2.7
— VISHAK V
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Document Number: 73075
S09-0223-Rev. B, 09-Feb-09
Vishay Siliconix
Si7960DP
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V 1 µA
VDS = 60 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 10 V 30 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 9.7 A 0.017 0.021
Ω
VGS = 4.5 V, ID = 8.9 A 0.020 0.025
Forward Transconductanceagfs VDS = 15 V, ID = 9.7 A 33 S
Diode Forward VoltageaVSD IS = 2.9 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = 30 V, VGS = 10 V, ID = 9.7 A
49 75
nCGate-Source Charge Qgs 5.7
Gate-Drain Charge Qgd 8.6
Gate Resistance Rgf = 1 MHz 2 Ω
Tur n - O n D e l ay Time td(on)
VDD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
12 20
ns
Rise Time tr12 20
Turn-Off Delay Time td(off) 60 90
Fall Time tf17 30
Source-Drain Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs 30 60
Output Characteristics
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 V thru 4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3V
Transfer Characteristics
0
5
10
15
20
25
30
35
40
0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 .5 4.0 4 .5
T
C = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
VISHAYE o 030
Document Number: 73075
S09-0223-Rev. B, 09-Feb-09
www.vishay.com
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Vishay Siliconix
Si7960DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.005
0.010
0.015
0.020
0.025
0
.
030
0 5 10 15 20 25 30 35 40
-On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
V
GS =1 0V
V
GS =4 . 5 V
0
2
4
6
8
10
0 1 02 03 04 0 50
V
DS =2 0V
I
D =9 . 7 A
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
0.0 0 .2 0.4 0 .6 0.8 1 .0 1.2
TJ= 150 °C
TJ= 25 °C
40
10
1
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
500
1000
1500
2000
2500
3000
3500
4000
0
VDS - Drain-to-Source Voltage (V)
Crss
Coss
Ciss
C - Capacitance (pF)
10 20 30 40 50 60
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 2 5 5 0 7 5 100 125 150
V
GS =1 0V
I
D =9 . 7 A
TJ- Junction Temperature (°C)
RDS(on) - On-Resistance
(Normalized)
0.00
0.01
0.02
0.03
0.04
0.05
0 2468 10
- On - R esistance ( RDS(on) Ω)
VGS - Gate-to-Source Voltage (V)
I
D =9 . 7 A
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Document Number: 73075
S09-0223-Rev. B, 09-Feb-09
Vishay Siliconix
Si7960DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
-1. 4
-1. 2
-1 . 0
-0 . 8
-0 . 6
-0 . 4
-0 . 2
0 . 0
0.2
0.4
0
.
6
- 50 - 25 0 2 5 5 0 7 5 100 125 150
ID= 250 µA
(V)VGS(th)
TJ- Temperature (°C)
Single Pulse Power
0
60
100
20
40
Power (W)
80
100 6000.010.001 1100.1
Time (s)
Safe Operating Area, Junction-to-Ambient
VDS - Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
T
A =2 5 °C
Single P ulse
- Drain C urrent (A) ID
0.1
IDM Limited
ID(on)
Limited
BVDSS Limited
10 s
DC
1 s
* VGS minimum VGS at which RDS(on)
is specified
>
10 ms
1 ms
100 µs
100 ms
Limited by RDS(on)*
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 1 0 600 10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single P ulse
Dut y Cy c l e = 0. 5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1 . Du ty Cycle , D =
2. Per U ni t B ase = R
thJ A
=6 0 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
No te s:
4. Sur f ace M ounted
P
DM
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Document Number: 73075
S09-0223-Rev. B, 09-Feb-09
www.vishay.com
5
Vishay Siliconix
Si7960DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73075.
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3 10
-2 10
-1
10
-4 1
2
1
0.1
0.01
0.2
0.1
0.05
P ulse
Dut y Cy c l e = 0. 5
Square Wave Pulse Duration (s)
Normalized E
f
f
ective T ransient
Thermal Impedance
0.02
Single
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Revision: 08-Feb-17 1Document Number: 91000
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