SI2302CDS Datasheet by Vishay Siliconix

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Si2302CDS
www.vishay.com Vishay Siliconix
S12-2336-Rev. D, 01-Oct-12 1Document Number: 68645
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 20 V (D-S) MOSFET
Marking code: N2
FEATURES
• TrenchFET® power MOSFET
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switching for portable devices
•DC/DC converter
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Pulse width limited by maximum junction temperature
PRODUCT SUMMARY
VDS (V) 20
RDS(on) max. () at VGS = 4.5 V 0.057
RDS(on) max. () at VGS = 2.5 V 0.075
Qg typ. (nC) 3.5
ID (A) 2.9
Configuration Single
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
Available
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free Si2302CDS-T1-E3
Lead (Pb)-free and halogen-free Si2302CDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL 5 S STEADY
STATE UNIT
Drain-source voltage VDS 20 20 V
Gate-source voltage VGS ± 8 ± 8
Continuous drain current (TJ = 150 °C) a TA = 25 °C ID
2.9 2.6
A
TA = 70 °C 2.3 2.1
Pulsed drain current bIDM 10 10
Continuous source current (diode conduction) aIS0.72 0.6
Power dissipation aTA = 25 °C PD
0.86 0.71 W
TA = 70 °C 0.55 0.46
Operating junction and storage temperature range TJ, Tstg -55 to +150 -55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient at 5 s RthJA
120 145
°C/WSteady state 140 175
Maximum junction-to-foot Steady state RthJF 62 78
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Si2302CDS
www.vishay.com Vishay Siliconix
S12-2336-Rev. D, 01-Oct-12 2Document Number: 68645
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test: Pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 20 - - V
Gate-threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.40 - 0.85
Gate-body leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 20 V, VGS = 0 V - - 0.1
μAVDS = 20 V, VGS = 0 V, TJ = 50 °C - - 4
VDS = 20 V, VGS = 0 V, TJ = 70 °C - - 15
On-state drain current a ID(on) V
DS 10 V, VGS = 4.5 V 6 - - A
Drain-source on-resistance aRDS(on)
VGS = 4.5 V, ID = 3.6 A - 0.045 0.057
VGS = 2.5 V, ID = 3.1 A - 0.056 0.075
Forward transconductance a gfs VDS = 5 V, ID = 3.6 A - 13 - S
Diode forward voltage VSD IS = 0.95 A, VGS = 0 V - 0.7 1.2 V
Dynamic b
Total gate charge Qg
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
-3.55.5
nCGate-source charge Qgs -0.6-
Gate-drain charge Qgd -0.45-
Gate resistance Rgf = 1 MHz 2 4 8
Switching
Turn-on delay time td(on)
VDD = 10 V, RL = 2.78
ID 3.6 A, VGEN = 4.5 V, Rg = 1
-815
ns
Rise time tr-715
Turn-off delay time td(off) -3045
Fall time tf-715
Source-drain reverse recovery time trr IF = 3.6 A, di/dt = 100 A/μs -8.515
Body diode reverse recovery charge Qrr -24nC
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Si2302CDS
www.vishay.com Vishay Siliconix
S12-2336-Rev. D, 01-Oct-12 3Document Number: 68645
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS = 5 V thru 2 V
VGS =1V
VGS =1.5V
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.3 0.6 0.9 1.2 1.5
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
TC= 25 °C
TC= 125 °C
TC= - 55 °C
0
80
160
240
320
400
0 5 10 15 20
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Coss
Crss
0
2
4
6
8
10
0.0 0.4 0.8 1.2 1.6 2.0
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
TC= 25 °C
TC= 125 °C
TC= - 55 °C
0.03
0.04
0.05
0.06
0.07
0246810
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
VGS =2.5V
VGS =4.5V
ID=3.6A
0
1
2
3
4
5
01234
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
VDS = 15 V
VDS =10V
VDS = 5 V
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Si2302CDS
www.vishay.com Vishay Siliconix
S12-2336-Rev. D, 01-Oct-12 4Document Number: 68645
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
Source-Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area, Junction-to-Ambient
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
VGS =2.5V,I
D=3.1A
VGS =4.5V,I
D=3.6A
0.04
0.06
0.08
0.10
0.12
012345
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
TJ= 25 °C
TJ= 125 °C
0
2
4
6
8
10
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
TA= 25 °C
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
Variance (V)VGS(th)
TJ- Temperature (°C)
ID=1mA
VDS - Drain-to-Source Voltage (V)
*V
GS > minimum VGS at which RDS(on) is specified
- Drain Current (A)I D
10
0.1
0.1 1 10
1
TA= 25 °C
Single Pulse
1ms
10 ms
100 ms
0.01
100 s, DC
BVDSS Limited
100
100 µs
Limited by RDS(on)*
1s
10 s
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Si2302CDS
www.vishay.com Vishay Siliconix
S12-2336-Rev. D, 01-Oct-12 5Document Number: 68645
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68645.
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
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Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
— VISHAY.. mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} D' 'SHa) com 25 Hex men Number 72609 on 2er ca
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
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Revision: 01-Jan-2019 1Document Number: 91000
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