MRF6V10010NR4 Datasheet by NXP USA Inc.

MRF6V10010N 3, 7/2010 M mtg.//www.freesca\e.com/rf rm . wwwlreescalexmm r! o O A : 'freescale" semfmndncmr
MRF6V10010NR4
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies
between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
use in pulsed applications.
!Typical Pulsed Performance: VDD =50Volts,I
DQ =10mA,P
out = 10 Watts
Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 "sec, Duty Cycle = 20%
Power Gain — 25 dB
Drain Efficiency — 69%
Features
!Characterized with Series Equivalent Large--Signal Impedance Parameters
!Qualified Up to a Maximum of 50 VDD Operation
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
!RoHS Compliant
!In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +100 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature TJ200 #C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 79#C, 10 W Pulsed, 100 "sec Pulse Width, 20% Duty Cycle Z$JC 1.6 #C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V10010N
Rev. 3, 7/2010
Freescale Semiconductor
Technical Data
1090 MHz, 10 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
MRF6V10010NR4
CASE 466--03, STYLE 1
PLD--1.5
PLASTIC
%Freescale Semiconductor, Inc., 2008--2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1C (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 #C
Table 5. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 10 "Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=7mA)
V(BR)DSS 100 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 50 "Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 2.5 mA
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=36"Adc)
VGS(th) 11.7 2.5 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
D= 10 mAdc, Measured in Functional Test)
VGS(Q) 1.7 2.4 3.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=70mAdc)
VDS(on) —0.2 —Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =50Vdc&30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —0.1 —pF
Output Capacitance
(VDS =50Vdc&30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —3.38 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc&30 mV(rms)ac @ 1 MHz)
Ciss —9.55 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ =10mA,P
out = 10 W Peak (2 W Avg.), f = 1090 MHz,
Pulsed, 100 "sec Pulse Width, 20% Duty Cycle
Power Gain Gps 23 25 28 dB
Drain Efficiency 'D66 69 — %
Input Return Loss IRL —-- 1 2 -- 8 dB
16 1° 1° 3
MRF6V10010NR4
3
RF Device Data
Freescale Semiconductor
Figure 1. MR6V10010NR4 Test Circuit Schematic
Z8 0.367(x 0.320(Microstrip
Z9 0.162(x 0.320(Microstrip
Z10 0.757(x 0.080(Microstip
Z11 0.763(x 0.080(Microstrip
Z12 0.290(x 0.080(Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030(,)r=2.55
Z1 0.200(x 0.080(Microstrip
Z2 0.696(x 0.120(Microstrip
Z3 0.087(x 0.320(Microstrip
Z4 0.323(x 0.320(Microstrip
Z5 0.320(x 0.620(x 0.185(Taper
Z6 0.135(x 0.620(Microstrip
Z7 0.714(x 0.620(Microstrip
Z1
RF
INPUT
C1
Z2 Z4
DUT
Z9
C14
RF
OUTPUT
VBIAS
VSUPPLY
C2 C9 C8
Z12Z8
R1
L1
L2
Z10
C11
R2
C16
Z3 Z5
+
C5
C4
C6
C3 C12
Z6 Z7
C15
C10 Z11
C7 C13
Table 6. MR6V10010NR4 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C9, C12 43 pF Chip Capacitors ATC100B430JT500XT ATC
C2 10 "F, 35 V Tantalum Capacitor T491D106K035AT Kemet
C3, C8 2.2 "F, 100 V Chip Capacitors GQM1885C2A2R2CB01B Murata
C4, C6 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C5, C16 3.0 pF Chip Capacitors ATC100B3R0CT500XT ATC
C7 0.1 "F Chip Capacitor C1206C104K5RACTR Kemet
C10, C15 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC
C11 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC
C13 470 "F, 63 V Chip Capacitor 477KXM063M Illlinois Capacitor
C14 47 pF Chip Capacitor ATC100B470JT500XT ATC
L1 8 nH Inductor A03TKLC Coilcraft
L2 5 nH Inductor A02TKLC Coilcraft
R1 3300 *, 1/4 W Chip Resistor CRCW12063301FKEA Vishay
R2 10 *, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
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4
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
Figure 2. MRF6V10010NR4 Test Circuit Component Layout
MRF6V10010N
Rev. 3
C2 L1 C3
C12
R1
R2
C4
C6
C16
C5
C1 C15
C10
L2
C7
C8
C9
C13
C11
C14
40,66 dBm u
MRF6V10010NR4
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
0.1
100
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
0.1
10
1
TC=25#C
10
1
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
ID, DRAIN CURRENT (AMPS)
10
1
40
Coss
Crss
Measured with &30 mV(rms)ac @ 1 MHz
VGS =0Vdc
TJ= 200#C
TJ= 150#C
TJ= 175#C
27
5
50
6
26
25
75
65
60
55
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
'D, DRAIN EFFICIENCY (%)
'D
22
12
Gps
35
45
12
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
40
13 14 15 16 17 19
Pout, OUTPUT POWER (dBm) PULSED
P3dB = 40.66 dBm (11.65 W)
Actual
Ideal
Figure 7. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
Gps, POWER GAIN (dB)
VDD =30V
17
27
0
25
35 V
23
45 V
212
50 V
24
21
19
VDD =50Vdc,I
DQ = 10 mA, f = 1090 MHz
Pulse Width = 100 "sec, Duty Cycle = 20%
IDQ = 10 mA, f = 1090 MHz
Pulse Width = 100 "sec
Duty Cycle = 20%
40 V
VDD =50Vdc,I
DQ = 10 mA, f = 1090 MHz
Pulse Width = 100 "sec, Duty Cycle = 20%
100
23
7891011
70
P1dB = 40.18 dBm
(10.42 W)
18
46810
0
14
0
25_C
85_C
0.01
10
8
Pin, INPUT POWER (WATTS) PULSED
Figure 8. Pulsed Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) PULSED
12
TC=--30_C
6
4
2
VDD =50Vdc
IDQ =10mA
f = 1090 MHz
Pulse Width = 100 "sec
Duty Cycle = 20%
0.02 0.03 0.04 0.05 0.06 0.07
6
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
TYPICAL CHARACTERISTICS
22
29
0
10
80
2
60
50
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
'D, DRAIN EFFICIENCY (%)
'D
28
14
25_C
TC=--30_C
85_CGps
40
27
26
VDD =50Vdc,I
DQ = 10 mA, f = 1090 MHz
Pulse Width = 100 "sec, Duty Cycle = 20%
25
24
23
468 1210
30
70
20
250
109
90
TJ, JUNCTION TEMPERATURE (#C)
Figure 10. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50Vdc,P
out = 10 W Peak, Pulse Width = 100 "sec,
Duty Cycle = 20%, and 'D= 69%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
105
110 130 150 170 190
MTTF (HOURS)
210 230
106
NE~Y(%) we mu
MRF6V10010NR4
7
RF Device Data
Freescale Semiconductor
Zo=50*
Zload
Zsource
f = 1090 MHz
f = 1090 MHz
VDD =50Vdc,I
DQ =10mA,P
out = 10 W Peak
f
MHz
Zsource
*
Zload
*
1090 1.15 + j8.96 13.47 + j34.32
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 11. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
H gL zouzx T‘W \ L 2.92
8
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
PACKAGE DIMENSIONS
0.115
2.92
0.020
0.51
0.115
2.92
mm
inches
0.095
2.41
0.146
3.71
SOLDER FOOTPRINT
CASE 466--03
ISSUE D
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.255 0.265 6.48 6.73
B0.225 0.235 5.72 5.97
C0.065 0.072 1.65 1.83
D0.130 0.150 3.30 3.81
E0.021 0.026 0.53 0.66
F0.026 0.044 0.66 1.12
G0.050 0.070 1.27 1.78
H0.045 0.063 1.14 1.60
K0.273 0.285 6.93 7.24
L0.245 0.255 6.22 6.48
N0.230 0.240 5.84 6.10
P0.000 0.008 0.00 0.20
Q0.055 0.063 1.40 1.60
R0.200 0.210 5.08 5.33
S0.006 0.012 0.15 0.31
U0.006 0.012 0.15 0.31
ZONE V 0.000 0.021 0.00 0.53
ZONE W 0.000 0.010 0.00 0.25
ZONE X 0.000 0.010 0.00 0.25
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
J0.160 0.180 4.06 4.57
A
BD
F
L
R
3
4
21
K
N
ZONE V
ZONE W
ZONE X
GS
H
U
_
10 DRAFT
P
CE
0.35 (0.89) X 45 5
YY
Q
VIEW Y--Y
__
4
2
1
3
PLD--1.5
PLASTIC
MRF6V10010NR4
9
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0June 2008 !Initial Release of Data Sheet
1Feb. 2009 !Corrected Zsource, “2.57 -- j7.33” to “1.15 + j8.96” and Zload, “14.10 -- j34.77” to “13.47 + j34.32” in Fig. 11,
Series Equivalent Source and Load Impedance data table and replotted data, p. 7
2June 2009 !Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
!Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 9
3July 2010 !Reporting of pulsed thermal data now shown using the Z$JC symbol, Table 2, Thermal Characteristics, p. 1
!Corrected errors made in the translation of the printed circuit board to the schematic, Fig. 1, Test Circuit
Schematic and Z list, p. 3
o .0 freescale‘
10
RF Device Data
Freescale Semiconductor
MRF6V10010NR4
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Document Number: MRF6V10010N
Rev. 3, 7/2010