IXT(H,P)130N15X4 Datasheet by IXYS

L'I IXYS 4| “ 4,12?» 3
© 2019 IXYS CORPORATION, All Rights Reserved DS100893B(11/19)
IXTP130N15X4
IXTH130N15X4
VDSS = 150V
ID25 = 130A
RDS(on)
8.5m
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 150 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 125C 200 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 7.0 8.5 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 150 V
VDGR TJ= 25C to 150C, RGS = 1M150 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 130 A
IDM TC= 25C, Pulse Width Limited by TJM 240 A
IATC= 25C65A
EAS TC= 25C 800 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PDTC= 25C 400 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque 1.13 / 10 Nm/lb.in
Weight TO-220 3 g
TO-247 6 g
N-Channel Enhancement Mode
Avalanche Rated
X4-Class
Power MOSFETTM
TO-220
(IXTP)
G = Gate D = Drain
S = Source Tab = Drain
TO-247
(IXTH)
G
SD (Tab)
D
D (Tab)
S
GD
D
G
S
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP130N15X4
IXTH130N15X4
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 130 A
ISM Repetitive, pulse Width Limited by TJM 520 A
VSD IF = 100A, VGS = 0V, Note 1 1.4 V
trr 93 ns
QRM 310 nC
IRM 6.7 A
IF = 65A, -di/dt = 100A/μs
VR = 75V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 60A, Note 1 70 120 S
RGi Gate Input Resistance 3.4
Ciss 4770 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 710 pF
Crss 3.5 pF
Co(er) 560 pF
Co(tr) 1850 pF
td(on) 20 ns
tr 27 ns
td(off) 100 ns
tf 10 ns
Qg(on) 87 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 24 nC
Qgd 23 nC
RthJC 0.31 C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
120 me In AAmperes 20 00204060511216 VDS-Valls 16 15 22 Fusion) A Normahzed 22 18 m 10 as \\ \\ 750 “fl an 25 an /\ HDSlon) A Normahzed |D 05 © 2019 IXVS CORPOHA‘HON‘ AH ngms Reserved
© 2019 IXYS CORPORATION, All Rights Reserved
IXTP130N15X4
IXTH130N15X4
Fig. 1. Output Characteristics @ TJ = 25
o
C
0
20
40
60
80
100
120
0 0.2 0.4 0.6 0.8 1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 3. Output Characteristics @ TJ = 125
o
C
0
20
40
60
80
100
120
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
4V
Fig. 4. RDS(on) Normalized to ID = 65A Value vs.
Junction Temperature
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 130A
I
D
= 65A
Fig. 5. RDS(on) Normalized to ID = 65A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 50 100 150 200 250 300 350 400
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ TJ = 25
o
C
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
5V
6V
8V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
m m) / 120 me / 3 m mo s so E // a a E E Em 2‘ so ‘f // 2 \ 3 on 40 \ m 20 20 // o n so 725 o 25 so 75 me 125 150 as Tc - Degrees Cenugvade Fig. 9. Transconduclance 2w ‘ ‘ 400 more / / 350 200 // 300 m m / / C 25"!) m 250 o m E / a % 120 / ’_ E200 . ’— m / we ‘ 5, / 2 150 M / 100 do so 0 0 / a 20 40 so 50 mo 120 Mo tea 1M 04 a ID-Ampeves Fig. 11. em Charge «moon mono ls:mmA g s m L g 5 mm) s i \ > o \ - m 3 2 > 5 mo 5 m % o m \/ / 1 n 10 2o 30 40 so so 70 so 90 1 uG - NanoCau‘ombs va5 Reserves the ngm to Change mems, Test Commons and Dwmensmns.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP130N15X4
IXTH130N15X4
Fig. 7. Maximum Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Transconductance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
25
o
C
125
o
C
T
J
= - 40
o
C
V
DS
= 10V
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
400
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 11. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 65A
I
G
= 10mA
Fig. 12. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1,000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 8. Input Admittance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
- 40
o
C
V
DS
= 10V
T
J
= 125
o
C
25
o
C
Fly. 15. Maxlmum Translenl Therm: m anc- K /W cm cum 000001 a mm mm Pulse wmm - Second ©2019|XVS CORPORATION, All Rights Reserved
© 2019 IXYS CORPORATION, All Rights Reserved
IXTP130N15X4
IXTH130N15X4
IXYS REF: T_130N15X4 (16-S201) 4-19-18
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 14. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
1ms
100μs
R
DS(
on
)
Limi
t
10ms
DC
25μs
Fig. 13. Output Capacitance Stored Energy
0
1
2
3
4
5
6
7
0 20 40 60 80 100 120 140 160
V
DS
- Volts
E
OSS
- MicroJoules
IXYS 3m INCHES MILLIMETERS MIN MAX MIN MAX [1 A .159 .165 4.30 4.70 ‘ " A1 .047 .055 1.20 1 .40 <7 42="" 079="" 106="" 200="" 270="" 1="" -="" 02=""> b .024 .039 0.50 1.00 l 122 .045 .057 1.15 1.45 4 c .014 026 0.35 0.65 1—1—L»1E1] D .587 .626 14.90 15.00 1 D1 .335 .370 8.50 9.40 (02) .500 .531 12.70 13.50 E .382 .406 9.70 10.30 (E1 ) .283 .323 7.20 3.20 e .100 BSC 2.54 380 2 i. ,4, M4 e1 200030 5.08 BSC E‘l—E—J W - H1 .244 .200 5.20 5.00 L .492 .547 12.50 13.90 EE E L1 .110 .154 2.80 3.90 EP .134 .150 340 3.80 O .106 .126 2.70 3.20 INCHES MILLIMETERS SYM M1N MAX MIN MAX A .190 205 4.93 5 21 A1 090 100 2 29 2.54 A2 075 095 1 91 2 15 b .045 055 1 14 1 4D 02 .075 037 191 2 20 b4 .115 .126 2.92 3.20 C 024 031 0 61 0.80 D .019 940 20 00 21.34 DI .650 .690 16 51 17.53 112 .035 050 0 59 1.27 E 520 $35 15 75 1513 E1 .545 .565 13.84 14.35 s .EISBSC 545 33c 11 - 010 " 0.25 K ,2 025 ~ 0 54 L .730 310 19 01 20 57 L1 .150 170 3 e1 4 32 exp 140 144 3.5:. 3.6:: «P1 275 290 e 99 7 57 O .220 244 5.59 s 20 R 170 190 4.32 4.23 S .242BSC 6.151331:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP130N15X4
IXTH130N15X4
TO-220 Outline
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
% | !25.Y§
© 2019 IXYS CORPORATION, All Rights Reserved
IXTP130N15X4
IXTH130N15X4
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