BAT15-03W Datasheet by Infineon Technologies

BAT15-03W
Single silicon RF Schottky diode
Product description
This Infineon RF Schottky diode is a silicon low barrier N-type device with an
integrated guard ring on-chip for over-voltage protection. Its low barrier
height, low forward voltage and low junction capacitance make BAT15-03W a
suitable choice for mixer and detector functions in applications which
frequencies are as high as 12 GHz.
Feature list
Low inductance LS = 1.8 nH (typical)
Low capacitance C = 0.28 pF (typical) at 1 MHz
Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm)
Pb-free, RoHS compliant and halogen-free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
For mixers and detectors in:
Sensor interfaces of security systems
Telematic systems
• Compensators
Radar systems for industrial use
Device information
Table 1 Part information
Product name / Ordering code Package Pin configuration Marking Pieces/Reel
BAT15-03W / BAT1503WE6327HTSA1 SOD323 Single, with leads white P 3 k
Attention:ESD (Electrostatic discharge) sensitive device, observe handling precautions!
Datasheet Please read the Important Notice and Warnings at the end of this document v1.0
www.infineon.com 2018-06-30
®
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2 Characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Package information SOD323 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
1 Absolute maximum ratings
Table 2 Absolute maximum ratings at TA= 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note or test condition
Min. Max.
Diode reverse voltage VR 4 V
Forward current IF 110 mA
Total power dissipation PTOT 100 mW TS ≤ 78 °C 1)
Junction temperature TJ 150 °C
Operating temperature TOP -55 150
Storage temperature TSTG -55 150
Attention:Stresses above the maximum values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the component.
1TS is the soldering point temperature.
BAT15-03W
Single silicon RF Schottky diode
Table of contents
Datasheet 2 v1.0
2018-06-30
®
2 Electrical performance in test fixture
2.1 Electrical characteristics
Table 3 Electrical characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Breakdown voltage VBR 4 – V IR = 100 μA
Reverse current IR 5 μA VR = 1 V
Forward voltage VF0.16 0.25 0.32 V IF = 1 mA
0.25 0.35 0.41 IF = 10 mA
Differential forward resistance RF 5.8 – IF = 10 mA / 50 mA 1)
Capacitance C 0.28 0.35 pF VR = 0 V, f = 1 MHz
Inductance LS 1.8 nH
2.2 Characteristic curves
At TA = 25 °C, unless otherwise specified
0 0.5 1 1.5 2 2.5 3 3.5 4
VR [V]
0.2
0.22
0.24
0.26
0.28
0.3
0.32
0.34
C [pF]
Figure 1 Diode capacitance C vs. reverse voltage VR at frequency f = 1 MHz
1
RF=VF50 mA VF10 mA
50 mA 10 mA
BAT15-03W
Single silicon RF Schottky diode
Electrical performance in test fixture
Datasheet 3 v1.0
2018-06-30
®
0 0.2 0.4 0.6 0.8 1
VF [V]
10-3
10-2
10-1
100
101
102
103
IF [mA]
Figure 2 Forward current IF vs. forward voltage VF
0 0.5 1 1.5 2 2.5 3 3.5 4
VR [V]
10-1
100
101
IR [µA]
Figure 3 Reverse current IR vs. reverse voltage VR
Note: The curves shown in this chapter have been generated using typical devices but shall not be
understood as a guarantee that all devices have identical characteristic curves.
BAT15-03W
Single silicon RF Schottky diode
Electrical performance in test fixture
Datasheet 4 v1.0
2018-06-30
®
3 Thermal characteristics
Table 4 Thermal resistance
Parameter Sym
bol
Values Unit Note or test condition
Min. Typ. Max.
Thermal resistance
(junction - soldering point)
RthJS – 715 – K/W TS = 78 °C 1)
0 20 40 60 80 100 120 140 160
TS [°C]
0
20
40
60
80
100
120
IF [mA]
Figure 4 Permissible forward current IF in DC operation
1For RthJS in other conditions refer to the curves in this chapter.
BAT15-03W
Single silicon RF Schottky diode
Thermal characteristics
Datasheet 5 v1.0
2018-06-30
inflneon thJS [K/W] UUUUUDUD a» {P 4; D=l‘z \ T > 101 ‘ ‘ ‘ 10'6 104‘ 10'2 10" (p [5] 3 , 2 5 7 , L) 2 7 ' _g E j. 1 5 7 , a (p H D-tp \ T 7 1 10's 10‘ 10'? 100 g, [s]
Figure 5 Thermal resistance RthJS in pulse operation
Figure 6 Permissible forward current ratio IFmax/IDC in pulse operation
BAT15-03W
Single silicon RF Schottky diode
Thermal characteristics
Datasheet 6 v1.0
2018-06-30
®
4 Package information SOD323
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & P ROJ ECTION METHO D 1 [ ]
MOLD FLAS H, P R OTR US ION OR GATE BURR S OF 0 .15 MM MAXIMUM P E R S IDE ARE NO T INC LUDED
1
2
CATHODE MARKING
1.25 -0 .10
+0.20
+0.10
0.3-0.0 5
+0.20
+0.20
+0.10
+0.05
A
0.25 A
2.5± 0.2 0
0.45 ±0 .15
0.15 -0 .06
1.7-0 .10
0.3-0.2 0 0.05 ±0.05
0.9-0.1 0
Figure 7 Package outline
co pp e r s olde r ma s k s te nc il a p e rture s
ALL DIMENS IONS ARE IN UNITS MM
0.5
0.6
1.2
2.4
0.5
0.6
1.2
2.4
Figure 8 Foot print
Figure 9 Marking layout example
40.2
1
2.9
8
1.35
4
ALL DIMENSIONS ARE IN UNITS MM
THE DR AWING IS IN CO MPLIANC E WITH IS O 1 28 & P R OJ E C TION METHOD 1 [ ]
INDEX MARKING
PIN 1
Figure 10 Tape dimensions
BAT15-03W
Single silicon RF Schottky diode
Package information SOD323
Datasheet 7 v1.0
2018-06-30
®
Revision history
Document
version
Date of
release
Description of changes
1.0 2018-09-07 Change from series datasheet to individual one
Initial release of datasheet
Typical values and curves updated to the values of the production
(No product or process change behind)
Typical values added
Typical curves removed
BAT15-03W
Single silicon RF Schottky diode
Revision history
Datasheet 8 v1.0
2018-06-30
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2018-06-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-fcx1515055878528
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customers products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
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any consequences of the use thereof can reasonably
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