FID60-06D Datasheet by IXYS

L'I IXYS
© 2011 IXYS All rights reserved 1 - 4
20110119a
FID 60-06D
IXYS reserves the right to change limits, test conditions and dimensions.
IC25 = 65 A
VCES = 600 V
VCE(sat) typ. = 1.6 V
IGBT Boost Chopper
in ISOPLUS i4-PAC™
Features
• NPT IGBT technology
- low saturation voltage with positive
temperature coefficient
- fast switching
- wide safe operating area
• HiPerFRED™ diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• medium frequency power supplies
- boost chopper for power factor
correction
- transformer primary switch
• drives: supply of
- switched reluctance machines
- armature or excitation winding of
DC machines
- excitation winding of synchronous
machines
IGBT
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES ± 20 V
IC25
IC90
TC = 25°C
TC = 90°C
65
40
A
A
ICM
VCEK
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
RBSOA Clamped inductive load; L = 100 µH
100
VCES
A
tSC
(SCSOA)
VCE = VCES; VGE = ±15 V; RG = 22 Ω
TVJ = 125°C; non-repetitive
10 µs
Ptot TC = 25°C 200 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 30 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.6
1.8
2.0 V
V
VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 0.1
0.1 mA
mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
Inductive load TVJ = 125°C
VCE = 300 V; IC = 30 A
VGE = ±15 V; RG = 22 Ω
50
60
300
30
1.0
1.4
ns
ns
ns
ns
mJ
mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2.8 nF
QGon VCE = 300 V; VGE = 15 V; IC = 50 A 120 nC
RthJC
RthJH with heatsink compound 1.2
0.6 K/W
K/W
2
3
4
1
E72873
MILLIMETER INCHES MIN MAX MIN MAX A 4 63 5 21 0,190 0205 A1 2 59 3.00 0,102 0113 A2 1 17 2.15 0,046 0,055 b 1 14 1.40 0,045 0055 T + 52 1 47 1.73 0,053 0,063 54 2.54 2.79 0,100 0,110 0 0.51 0.74 0,020 0029 D 20.30 21.34 0,319 0,340 4 D1 14.99 15.75 0,590 0520 D2 1.65 2.03 0,065 0,050 ,7 E 19.55 20.29 0,770 0799 E1 15.75 17.53 0,560 0,690 s 331580 0,15 580 L 19.31 21.34 0,750 0540 L1 2.11 2.59 0,053 0102 5.33 6.20 0,210 0244 2.54 4.57 0,100 0130 7 0.10 7 0 004 Die kunvexe anm 625 Substrams 151 1w < 0="" 05="" mm="" 0051="" der="" kuns|smflober1lache="" 05!="" same="" the="" convex="" dawof="" substrate="" 15="" typ="" surface="" have]="" ofdevrce="" dona/n="" ma="" 1="" d="" ema="">
© 2011 IXYS All rights reserved 2 - 4
20110119a
FID 60-06D
IXYS reserves the right to change limits, test conditions and dimensions.
Diode
Symbol Conditions Maximum Ratings
VRRM TVJ = 25°C to 150°C 600 V
IF25
IF90
TC = 25°C
TC = 90°C
52
31
A
A
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
operating -55...+150
-55...+125
°C
°C
VISOL IISOL < 1 mA; 50/60 Hz; t = 1 s 2500 V~
FCMounting force with clip 20...120 Nm
Symbol Conditions Characteristic Values
min. typ. max.
CPcoupling capacity between shorted
pins and mounting tab in the case
40 pF
dS, dA
dS, dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight 6 g
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 30 A TVJ = 25°C
TVJ = 125°C
2.2
1.5
2.6 V
V
IRVR = VRRM TVJ = 25°C
TVJ = 125°C 0.3
0.3 mA
mA
IRM
trr
IF = 30 A; diF/dt = -500 A/µs;
VR = 300 V; VGE = 0 V; TVJ = 125°C
15
70
A
ns
RthJC
RthJH with heatsink compound 2.6
1.3 K/W
K/W
b4
4x e
E
W
A
A2
A1
Cb2
b
E1
D1
D2
L1
LD
R
Q
1 2 53 4
MIN MAX MIN MAX
A 4.83 5.21 0.190 0.205
A1 2.59 3.00 0.102 0.118
A2 1.17 2.16 0.046 0.085
b 1.14 1.40 0.045 0.055
b2 1.47 1.73 0.058 0.068
b4 2.54 2.79 0.100 0.110
C 0.51 0.74 0.020 0.029
D 20.80 21.34 0.819 0.840
D1 14.99 15.75 0.590 0.620
D2 1.65 2.03 0.065 0.080
E 19.56 20.29 0.770 0.799
E1 16.76 17.53 0.660 0.690
e
L 19.81 21.34 0.780 0.840
L1 2.11 2.59 0.083 0.102
Q 5.33 6.20 0.210 0.244
R2.54 4.57 0.100 0.180
W ―0.10 ―0.004
DIM. MILLIMETER INCHES
3.81 BSC 0.15 BSC
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
© 2011 IXYS All rights reserved 3 - 4
20110119a
FID 60-06D
IXYS reserves the right to change limits, test conditions and dimensions.
0 200 400 600 800 1000
0
10
20
30
40
50
0
30
60
90
120
150
0 1 2 3 4 5 6
0
30
60
90
120
150
0 40 80 120 160
0
5
10
15
20
0123456
0
30
60
90
120
150
VCE = 300 V
IC = 50 A
VCE [V]
IC
[A]
trr
[ns]
IRM
trr
9V
11V
9 V
11 V
VGE= 17 V
15 V
13 V
4 6 8 10 12 14 16
0
30
60
90
120
150
TVJ = 25°C
TVJ = 125°C
0.0 0.5 1.0 1.5 2.0
0
15
30
45
60
75
90
TVJ = 25°CTVJ = 125°C
42T60 42T60
42T60 42T60
42T60 42T60
TVJ = 25°C
VCE = 20 V
TVJ = 125°C
VR = 300 V
IF = 30 A
VGE= 17 V
15 V
13 V
TVJ = 125°C
VCE [V]
IC
[A]
VGE [V] VF [V]
IC
[A]
IF
[A]
IRM
[A]
-di/dt [A/µs]
VGE
[V]
QG [nC]
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics
of free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics
of free wheeling diode
l\
© 2011 IXYS All rights reserved 4 - 4
20110119a
FID 60-06D
IXYS reserves the right to change limits, test conditions and dimensions.
0 20 40 60 80 100 120
0.0
2.5
5.0
7.5
10.0
0
25
50
75
100
0 20 40 60 80 100 120
0
1
2
3
4
0
100
200
300
400
10-5 10-4 10-3 10-2 10-1 100101
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50
0.0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
10 20 30 40 50
1
2
3
4
20
40
60
80
single pulse
0 100 200 300 400 500 600 700
0
30
60
90
120
Eon
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC [A]
Eon
[mJ]
t
[ns]
IGBT
42T60 42T60
42T60 42T60
42T60
VCE = 300 V
VGE = ±15 V
RG = 22 Ω
TVJ = 125°C
VCE = 300 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
RG = 22 Ω
TVJ = 125°C
VCE = 300 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
VCE = 300 V
VGE = ±15 V
RG = 22 Ω
TVJ = 125°C
VID...75-06P1
diode
Eoff
[mJ]
t
[ns]
IC [A]
Eon
[mJ]
Eoff
[mJ]
RG [Ω]
t
[ns]
t
[ns]
t [s]
ZthJC
[K/W]
ICM
[A]
RG [Ω]
VCE [V]
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus
collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus
gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA