IXF(K,X)64N60P Datasheet by IXYS

IXYS
© 2006 IXYS All rights reserved DS99442E(01/06)
PolarHVTM HiPerFET
Power MOSFET
VDSS = 600 V
ID25 =64A
RDS(on) ≤≤
≤≤
≤96 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
lInternational standard packages
lFast recovery diode
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 3 mA 600 V
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 1000 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 96 m Ω
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C64A
IDM TC= 25°C, pulse width limited by TJM 150 A
IAR TC= 25°C64A
EAR TC= 25°C80mJ
EAS TC= 25°C 3.5 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 20 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 1040 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
FCMounting force (PLUS247) 20..120/4.5..25 N/lb
MdMounting torque (TO-264) 1.13/10 Nm/lb.in.
Weight TO-264 10 g
PLUS247 6 g
PLUS247 (IXFX)
G = Gate D = Drain
S = Source Tab = Drain
S
G
D(TAB)
TO-264 (IXFK)
(TAB)
IXFK 64N60P
IXFX 64N60P
IXYS
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 64N60P
IXFX 64N60P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 0.5 ID25, Note 1 40 63 S
Ciss 12 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 pF
Crss 80 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 23 ns
td(off) RG= 1 Ω (External) 79 ns
tf24 ns
Qg(on) 200 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 nC
Qgd 68 nC
RthJC 0.12 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 64 A
ISM Repetitive 150 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 25A, -di/dt = 100 A/µs 200 ns
QRM VR = 100V 0.6 µC
IRM 6.0 A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM Outline
TO-264 Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
In AAmperes vDS - Vohs Rusm, A Normahzed Rusm -Normahzed (r: 2006 \XYS AH rights reserved
© 2006 IXYS All rights reserved
IXFK 64N60P
IXFX 64N60P
Fig. 1. Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
65
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
65
02468101214
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 32A vs.
Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 64A
I
D
= 32A
Fig. 5. R
DS(on)
Normalized to I
D
= 32A vs.
Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
0 20 40 60 80 100 120 140 160
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
70
-50-25 0 25 50 75100125150
T
J
- Degrees Centigrade
I
D
- Amperes
120 we so so I5 - Amperes w 20 n =125»c n = 25%: v65 AVmIs a: 10 mm 1 Capamlance A anFarads \XYS reserves the ngmm change hmwls tesmondmons and mmensmns on m 04 05 «u we 07 as VSD-Vuhs 15 2o VHS-Vans 09 1 25 30 11 35 12 an In AAmperes m 150 \/DS - Vans
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 64N60P
IXFX 64N60P
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
3.544.555.566.57
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 102030405060708090100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
20
40
60
80
100
120
140
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 300V
I
D
= 32A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
25µs
1ms
100µ
R
DS(on)
Limit
10ms
DC
:I IXYS
© 2006 IXYS All rights reserved
Fig. 13. Maximum Transient Thermal Resistance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
(th)JC
- ºC / W
IXYS A Lillelluse Technumgy
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