V1PM10 Datasheet by Vishay General Semiconductor - Diodes Division

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V1PM10
www.vishay.com Vishay General Semiconductor
Revision: 03-Aug-2020 1Document Number: 87664
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
LINKS TO ADDITIONAL RESOURCES
FEATURES
Very low profile - typical height of 0.65 mm
Ideal for automated placement
Trench MOS Schottky technology
Low forward voltage drop
Low power loss, high efficiency
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications, in commercial, industrial, and automotive
applications.
MECHANICAL DATA
Case: MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 100 V
IFSM 25 A
VF at IF = 1.0 A (125 °C) 0.58 V
TJ max. 175 °C
Package MicroSMP (DO-219AD)
Circuit configuration Single
MicroSMP (DO-219AD)
eSMP® Series
Top View Bottom View
A
K
Cathode
Anode
3
3
3
D
D
D
3
D
3D Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V1PM10 UNIT
Device marking code 1MB
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum DC forward current IF(AV) 1.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 25 A
Operating junction and storage temperature range TJ, TSTG -40 to +175 °C
VISHAY. Ifli an: DwodesAmencasalwshay.com DwodesAslaalwshayLam DwodesEuroge®wshay com www wshay,com/doc791000
V1PM10
www.vishay.com Vishay General Semiconductor
Revision: 03-Aug-2020 2Document Number: 87664
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/ RJA
(2) Free air, mounted on FR4 PCB, 2 oz. standard footprint, RJA - junction to ambient
(3) Mounted on FR4 PCB, 2 oz. standard footprint, RJM - junction to mount
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Average Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
IF = 0.5 A TA = 25 °C
VF (1)
0.58 -
V
IF = 1.0 A 0.69 0.77
IF = 0.5 A TA = 125 °C 0.50 -
IF = 1.0 A 0.58 0.66
Reverse current
VR = 70 V TA = 25 °C
IR (2)
1-
μA
VR = 100 V - 50
VR = 70 V TA = 125 °C 0.2 - mA
VR = 100 V 0.5 1.5
Typical junction capacitance 4.0 V, 1 MHz CJ100 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V1PM10 UNIT
Typical thermal resistance RJA (1)(2) 130 °C/W
RJM (3) 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V1PM10-M3/H 0.006 H 4500 7" diameter plastic tape and reel
V1PM10HM3/H (1) 0.006 H 4500 7" diameter plastic tape and reel
0
0.2
0.4
0.6
0.8
1.0
1.2
0 255075100125150175
Average Forward Rectified Current (A)
Mount Temperature (°C)
TMmeasured at cathode terminal mount
typical values
TM =160 ƱC, RthJM =20 ƱC/W
TA =25 ƱC, RthJA =130 ƱC/W
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1 1.2
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
VISHAY. E 5 r[ ]4 LL Jj L an. DwodesAmencasQA/wsha .com DwodesAslaalwshayLam DwodesEuro e@wsha com www wsha ,com/doc791000
V1PM10
www.vishay.com Vishay General Semiconductor
Revision: 03-Aug-2020 3Document Number: 87664
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
=150°C
T
A
=-40°C
T
A
=25°C
T
A
= 125 °C
T
A
=175°C
T
A
=100°C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 175 °C
T
A
= -40 °C
1
10
100
1000
0.1 1 10 100 1000
Junction Capacitance (pF)
Reverse Voltage (V)
TJ= 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to ambient
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Revision: 01-Jan-2021 1Document Number: 91000
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