IDH06G65C6 Datasheet by Infineon Technologies

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Final Datasheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0, 2017-05-23
IDH06G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier
diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further
advancements like a novel Schottky metal system. The result is a family of products with improved efficiency
over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650 V G6
has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent
application requirements in this voltage range.
Table 1 Key performance parameters
Parameter
Value
Unit
VRRM
650
V
QC (VR = 400 V)
9.6
nC
EC (VR = 400 V)
1.6
µJ
IF (TC ≤ 145 °C, D = 1)
6
A
VF (IF = 6 A, Tj = 25 °C)
1.25
V
Table 2 Package information
Type / ordering Code
Package
Marking
IDH06G65C6
PG-TO220-2
D0665C6
Features
Best in class forward voltage (1.25 V)
Best in class figure of merit (Qc x VF)
High dv/dt ruggedness (150 V/ns)
Benefits
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
Potential Applications
Power factor correction in SMPS
Solar inverter
Uninterruptible power supply
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
PG-TO220-2
2
CASE
1) Cathode
2) Anode
6 ' . IDHosesscs (I nflneon
Final Datasheet 2 Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
IDH06G65C6
Table of Content
1 Maximum ratings ............................................................................................................................... 3
2 Thermal characteristics ..................................................................................................................... 3
3 Electrical characteristics .................................................................................................................... 4
3.1 Static characteristics ............................................................................................................................... 4
3.2 AC characteristics .................................................................................................................................... 4
4 Diagrams ............................................................................................................................................ 5
5 Simplified forward characteristic ....................................................................................................... 7
6 Package outlines ................................................................................................................................ 8
6 ifineon |DH06G65CrGa L/
Final Datasheet 3 Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
IDH06G65C6
1 Maximum ratings
Table 3 Maximum ratings
Parameter
Symbol
Values
Unit
Note/Test condition
Min.
Typ.
Max.
Continuous forward current
IF
–
–
6
A
TC ≤ 145 °C, D = 1
–
–
9
TC ≤ 125 °C, D = 1
–
–
16
TC ≤ 25 °C, D = 1
Surge-repetitive forward current,
sine halfwave1
IF,RM
–
–
26
TC = 25 °C, tp = 10 ms
Surge non-repetitive forward
current, sine halfwave
IF,SM
–
–
38
TC = 25 °C, tp = 10 ms
–
–
30
TC = 150 °C, tp = 10 ms
Non-repetitive peak forward
current
IF,max
–
–
410
TC = 25 °C, tp = 10 µs
i²t value
∫ i²dt
–
–
7.2
A²s
TC = 25 °C, tp = 10 ms
–
–
4.6
TC = 150 °C, tp = 10 ms
Repetitive peak reverse voltage
VRRM
–
–
650
V
TC = 25 °C
Diode dv/dt ruggedness
dv/dt
–
–
150
V/ns
VR = 0..480 V
Power dissipation
Ptot
–
–
54
W
TC = 25°C, RthJC,max
Operating and storage
temperature
Tj
Tstg
-55
–
175
°C
–
Mounting torque
–
–
–
70
Ncm
M3 screw
2 Thermal characteristics
Table 4 Thermal characteristics (PG-TO-220-2)
Parameter
Symbol
Values
Unit
Note/Test condition
Min.
Typ.
Max.
Thermal resistance, junction-
case
RthJC
–
1.7
2.8
K/W
–
Thermal resistance, junction-
ambient
RthJA
–
–
62
leaded
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
–
–
260
°C
1.6 mm (0.063 in.) from
case for 10 s
1
The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period).
6 ifineon |DH06G65CrGa L/
Final Datasheet 4 Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
IDH06G65C6
3 Electrical characteristics
3.1 Static characteristics
Table 5 Static characteristics
Parameter
Symbol
Values
Unit
Note/Test condition
Min.
Typ.
Max.
DC blocking voltage
VDC
650
–
–
V
Tj = 25 °C
Diode forward voltage
VF
–
1.25
1.35
IF = 6 A, Tj = 25 °C
–
1.5
–
IF = 6 A, Tj = 150 °C
Reverse current
IR
–
0.6
20
µA
VR = 420 V, Tj = 25 °C
–
20
–
VR = 420 V, Tj = 125 °C
–
46
–
VR = 420 V, Tj = 150 °C
3.2 AC characteristics
Table 6 AC characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Total capacitive charge
Qc
–
9.6
–
nC
VR = 400 V, Tj = 150 °C,
di/dt = 200 A/µs, IF ≤ IF,MAX
Total capacitance
C
–
302
–
pF
VR = 1 V, f = 1 MHz,
Tj = 25 °C
–
18
–
VR = 300 V, f = 1 MHz,
Tj = 25 °C
–
17
–
VR = 600 V, f = 1 MHz,
Tj = 25 °C
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Final Datasheet 5 Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
IDH06G65C6
4 Diagrams
Ptot = f(TC)
IF = f(TC); RthJC,max ; Tj ≤ 175 °C; parameter: D = tP/T
Figure 1 Power dissipation
Figure 2 Max. forward current
IF = f(VF); tp = 10 µs; parameter: Tj
IF = f(VF); tp = 10 µs; parameter: Tj
Figure 3 Typ. forward characteristics
Figure 4 Typ. forward characteristics
in surge current
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Final Datasheet 6 Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
IDH06G65C6
QC = f(diF/dt); Tj = 150 °C; VR = 400 V; IF ≤ IF,max
IR = f(VR); parameter: Tj
Figure 5 Typ. cap. charge vs. current slope
Figure 6 Typ. reverse current vs. reverse voltage
Zth,jc = f(tP); parameter: D = tP/T
C = f(VR); Tj = 25 °C; f = 1 MHz
Figure 7 Max. transient thermal
impedance
Figure 8 Typ. capacitance vs. reverse voltage
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Final Datasheet 7 Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
IDH06G65C6
2-
4-
6-
2
0194.7
1050.1
102.07
C
B
A
CTBTATR jjjDIFF
Treshold voltage (VTH):
Differential resistance (RDIFF):
VF = f(IF)
Tj [°C]; -55 °C ≤ Tj ≤ 175 °C; IF ≤ 6 A
Figure 10 Equivalent forward current curve
Figure 11 Mathematical Equation
EC = f(VR)
Figure 9 Typ. capacitance stored energy
5 Simplified forward characteristic
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TH
DIFF
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Final Datasheet 8 Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
IDH06G65C6
6 Package outlines
Figure 12 Outlines of the package PG-TO220-2, dimensions in mm/inches
6 'I. |DH06G65C6 Inflneon
Final Datasheet 9 Rev. 2.0, 2017-05-23
6th Generation CoolSiCTM
IDH06G65C6
Revision History
Major changes since the last revision
Revision
Date
Subject (major changes since last revision)
2.0
2017-05-23
Release of final version
Published by
Infineon Technologies AG
81726 München, Germany
© 2017 Infineon Technologies AG.
All Rights Reserved.
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document?
Email: erratum@infineon.com
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Edition 2017-05-23
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